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IFRMS = 2x 300 A
IFAVM = 2x 165 A
VRRM = 800-1800 V
Symbol Test Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM 20 mA
VFIF = 300 A; TVJ = 25°C 1.3 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 1.3 mW
QSTVJ = 125°C; IF = 300 A, -di/dt = 50 A/ms 550 mC
IRM 235 A
RthJC per diode; DC current 0.21 K/W
per module other values 0.105 K/W
RthJK per diode; DC current see Fig. 6/7 0.31 K/W
per module 0.155 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Dimensions in mm (1 mm = 0.0394")
VRSM VRRM Type
VV
900 800 MDD 142-08N1
1300 1200 MDD 142-12N1
1500 1400 MDD 142-14N1
1700 1600 MDD 142-16N1
1900 1800 MDD 142-18N1
Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 300 A
IFAVM TC = 100°C; 180° sine 165 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 4700 A
VR = 0 t = 8.3 ms (60 Hz), sine 5000 A
TVJ = TVJM t = 10 ms (50 Hz), sine 4100 A
VR = 0 t = 8.3 ms (60 Hz), sine 4300 A
òi2dt TVJ = 45°C t = 10 ms (50 Hz), sine 110 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 104 000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 84 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 77 000 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M6) 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in.
Weight Typical including screws 120 g
Features
●International standard package
●Direct copper bonded Al2O3 -ceramic
base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered, E 72873
Applications
●Supplies for DC power equipment
●DC supply for PWM inverter
●Field supply for DC motors
●Battery DC power supplies
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
●Reduced protection circuits
MDD 142
High Power
Diode Modules
312 3
12
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MDD 142
Fig. 1 Surge overload current
IFSM: Crest value, t: duration Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
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Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.31
180°0.323
120°0.333
60°0.360
30°0.395
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0087 0.001
2 0.0163 0.065
3 0.185 0.4
4 0.1 1.29
MDD 142
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.210
180°0.223
120°0.233
60°0.260
30°0.295
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0087 0.001
2 0.0163 0.065
3 0.185 0.4
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