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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

LPV321-N Single, LPV358-N Dual, and LPV324-N Quad General-Purpose, Low Voltage,

Low Power, Rail-to-Rail Output Operational Amplifiers

1 Features

1• Specified 2.7-V and 5-V Performance

• No Crossover Distortion

• Space-Saving Package

– 5-Pin SC70 2 × 2.1 × 1 mm

• Industrial Temperature Range: −40°C to 85°C

• Gain-Bandwidth Product: 152 kHz

• Low Supply Current

– LPV321-N: 9 µA

– LPV358-N: 15 µA

– LPV324-N: 28 µA

• Rail-to-Rail Output Swing at 100 kΩLoad:

– V+−3.5 mV

– V−+ 90 mV

• VCM,−0.2 V to V+−0.8 V

2 Applications

• Active Filters

• General-Purpose Low Voltage Applications

• General-Purpose Portable Devices

3 Description

The LPV3xx-N are low power (9-µA per channel at

5 V) versions of the LMV3xx op amps. This is another

addition to the LMV family of commodity op amps.

The LPV3xx-N are the most cost effective solutions

for the applications where low voltage, low power

operation, space saving and low price are needed.

The LPV3xx-N have rail-to-rail output swing capability

and the input common-mode voltage range includes

ground. They all exhibit excellent speed-power ratio,

achieving 152 kHz of bandwidth with a supply current

of only 9 µA.

The LPV321-N is available in space saving 5-Pin

SC70, which is approximately half the size of 5-Pin

SOT-23. The small package saves space on PC

boards, and enables the design of small portable

electronic devices. It also allows the designer to place

the device closer to the signal source to reduce noise

pickup and increase signal integrity.

The chips are built with Texas Instruments's

advanced submicron silicon-gate BiCMOS process.

The LPV3xx-N have bipolar input and output stages

for improved noise performance and higher output

current drive.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)

LPV321-N SC70 (5) 2.00 mm × 1.25 mm

SOT-23 (5) 2.90 mm × 1.60 mm

LPV358-N SOIC (8) 4.90 mm × 3.91 mm

VSSOP (8) 3.00 mm × 3.00 mm

LPV324-N SOIC (14) 8.65 mm × 3.91 mm

TSSOP (14) 5.00 mm × 4.40 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Micropower Supply Current Rail-to-Rail Output Swing

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 DC Electrical Characteristics – 2.7 V........................ 5

6.6 AC Electrical Characteristics – 2.7 V........................ 5

6.7 DC Electrical Characteristics – 5 V........................... 5

6.8 AC Electrical Characteristics – 5 V........................... 6

6.9 Typical Characteristics.............................................. 7

7 Detailed Description............................................ 13

7.1 Overview ................................................................ 13

7.2 Functional Block Diagram....................................... 13

7.3 Feature Description................................................. 13

7.4 Device Functional Modes........................................ 14

8 Application and Implementation ........................ 16

8.1 Application Information .......................................... 16

8.2 Typical Applications ................................................ 16

9 Power Supply Recommendations...................... 19

10 Layout................................................................... 20

10.1 Layout Guidelines ................................................. 20

10.2 Layout Example .................................................... 20

11 Device and Documentation Support................. 21

11.1 Device Support .................................................... 21

11.2 Documentation Support ....................................... 21

11.3 Related Links ........................................................ 21

11.4 Receiving Notification of Documentation Updates 21

11.5 Community Resources.......................................... 21

11.6 Trademarks........................................................... 21

11.7 Electrostatic Discharge Caution............................ 22

11.8 Glossary................................................................ 22

12 Mechanical, Packaging, and Orderable

Information........................................................... 22

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision D (March 2013) to Revision E Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation

section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and

Mechanical, Packaging, and Orderable Information section.................................................................................................. 1

• Deleted Soldering temperature (235°C maximum)................................................................................................................. 4

• Changed Thermal Resistance, RθJA, values From: 478 To: 296.7 (SC70), From: 265 To: 206.6 (SOT-23), From: 190

To: 130.1 (8-Pin SOIC), From: 235 To: 187.5 (VSSOP), From: 145 To: 103.9 (14-Pin SOIC), From: 155 To: 132.7

(TSSOP)................................................................................................................................................................................. 4

Changes from Revision C (March 2013) to Revision D Page

• Changed layout of National Semiconductor Data Sheet to TI format .................................................................................... 1

OUTD

-IND

+IND

V-

OUTA

-INA

+INA

V+

+INC

-INC

OUTC

+INB

-INB

OUTB

V+

OUTB

-INB

+INB

OUTA

-INA

+INA

V-

V+

OUT

IN+

V-

IN-

LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

(1) I = Input, O = Output, P = Power

5 Pin Configuration and Functions

DBV or DCK Package

5-Pin SC70 or SOT-23

Top View

D or DGK Package

8-Pin SOIC or VSSOP

Top View

D or PW Package

14-Pin SOIC or TSSOP

Top View

Pin Functions

PIN TYPE(1) DESCRIPTION

NAME SC70 or

SOT-23 SOIC or

VSSOP SOIC or

TSSOP

+IN 1 — — I Noninverting input

IN A+ — 3 3 I Noninverting input, channel A

IN B+ — 5 5 I Noninverting input, channel B

IN C+ — — 10 I Noninverting input, channel C

IN D+ — — 12 I Noninverting input, channel D

–IN 3 — — I Inverting input

IN A– — 2 2 I Inverting input, channel A

IN B– — 6 6 I Inverting input, channel B

IN C– — — 9 I Inverting input, channel C

IN D– — — 13 I Inverting input, channel D

OUTPUT 4 — — O Output

OUT A — 1 1 O Output, channel A

OUT B — 7 7 O Output, channel B

OUT C — — 8 O Output, channel C

OUT D — — 14 O Output, channel D

V+ 5 8 4 P Positive (highest) power supply

V– 2 4 11 P Negative (lowest) power supply

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Shorting output to V+will adversely affect reliability.

(3) Shorting output to V−will adversely affect reliability.

(4) The maximum power dissipation is a function of TJ(MAX) and RθJA. The maximum allowable power dissipation at any ambient

temperature is PD= (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN MAX UNIT

Differential input voltage ±Supply voltage

Supply voltage (V+– V −) 5.5 V

Output short circuit to V +See(2)

Output short circuit to V −See(3)

Junction temperature, TJ(MAX)(4) 150 °C

Storage temperature, Tstg –65 150 °C

(1) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of

JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

6.2 ESD Ratings VALUE UNIT

LPV321-N in DBV and DCK Packages

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V

Machine model ±100

LPV358-N in D and DGK Packages

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V

Machine model ±100

LPV324-N in D and PW Packages

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V

Machine model ±100

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT

Supply voltage 2.7 5 V

Operating temperature –40 85 °C

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

LPV321-N LPV358-N LPV324-N

UNIT

DBV

(SOT-23) DCK

(SC70) DGK

(VSSOP) D

(SOIC) D

(SOIC) PW

(TSSOP)

5 PINS 5 PINS 8 PINS 8 PINS 14 PINS 14 PINS

RθJA Junction-to-ambient thermal resistance 206.6 296.7 187.5 130.1 103.9 132.7 °C/W

RθJC(top) Junction-to-case (top) thermal resistance 167.2 128.1 77.7 74.3 61.6 59.1 °C/W

RθJB Junction-to-board thermal resistance 65.5 74.3 108 70.7 58.4 75.1 °C/W

ψJT Junction-to-top characterization parameter 50.2 6.5 15.2 23.1 21.2 10.8 °C/W

ψJB Junction-to-board characterization parameter 65.1 73.6 106.5 70.2 58.1 74.58 °C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance — — — — — — °C/W

LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

(1) All limits are specified by testing or statistical analysis.

(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped

production material.

6.5 DC Electrical Characteristics – 2.7 V

TJ= 25°C, V+= 2.7 V, V−= 0 V, VCM = 1 V, VO= V+/2, and R L> 1 MΩ(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

VOS Input offset voltage 1.2 7 mV

TCVOS Input offset voltage average drift 2 µV/°C

IBInput bias current 1.7 50 nA

IOS Input offset current 0.6 40 nA

CMRR Common mode rejection ratio 0 V ≤VCM ≤1.7 V 50 70 dB

PSRR Power supply rejection ratio 2.7 V ≤V+≤5 V, VO= 1 V, VCM = 1 V 50 65 dB

VCM Input common-mode voltage For CMRR ≥50 dB 0−0.2 V

1.9 1.7

VOOutput swing RL= 100 kΩto 1.35 V V+−100 V+−3mV

80 180

ISSupply current LPV321-N 4 8 µALPV358-N, both amplifiers 8 16

LPV324-N, all four amplifiers 16 24

(1) All limits are specified by testing or statistical analysis.

(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped

production material.

6.6 AC Electrical Characteristics – 2.7 V

TJ= 25°C, V+= 2.7 V, V−= 0 V, VCM = 1 V, VO= V+/2, and R L> 1 MΩ(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

GBWP Gain-bandwidth product CL= 22 pF 112 kHz

ΦmPhase margin 97 °

GmGain margin 35 dB

enInput-referred voltage noise f = 1 kHz 178 nV/√Hz

inInput-referred current noise f = 1 kHz 0.5 pA/√Hz

(1) All limits are specified by testing or statistical analysis.

(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped

production material.

6.7 DC Electrical Characteristics – 5 V

TJ= 25°C, V+= 5 V, V−= 0 V, VCM = 2 V, VO= V+/2, and R L> 1 MΩ(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

VOS Input offset voltage TJ= 25°C 1.5 7 mV

TJ= –40°C to 85°C 10

TCVOS Input offset voltage average

drift 2 µV/°C

IBInput bias current TJ= 25°C 2 50 nA

TJ= –40°C to 85°C 60

IOS Input offset current TJ= 25°C 0.6 40 nA

TJ= –40°C to 85°C 50

CMRR Common mode rejection

ratio 0 V ≤VCM ≤4 V 50 71 dB

PSRR Power supply rejection ratio 2.7 V ≤V+≤5 V, VO= 1 V, VCM = 1 V 50 65 dB

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

DC Electrical Characteristics – 5 V (continued)

TJ= 25°C, V+= 5 V, V−= 0 V, VCM = 2 V, VO= V+/2, and R L> 1 MΩ(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

(3) RLis connected to V -. The output voltage is 0.5 V ≤VO≤4.5 V.

VCM Input common-mode voltage For CMRR ≥50 dB 0−0.2 V

4.2 4

AVLarge signal voltage gain(3) RL= 100 kΩTJ= 25°C 15 100 V/mV

TJ= –40°C to 85°C 10

VOOutput swing

Sourcing

RL= 100 kΩto 2.5 V TJ= 25°C V+−100 V+−3.5

TJ= –40°C to 85°C V+−200

Sinking

RL= 100 kΩto 2.5 V TJ= 25°C 90 180

TJ= –40°C to 85°C 220

Output short circuit current

sourcing LPV3xx-N, VO= 0 V 2 16 mA

Output short circuit current

sinking LPV321-N, VO= 5 V 20 60

LPV324-N and LPV358-N, VO= 5 V 11 16

ISSupply current

LPV321-N TJ= 25°C 9 12

µA

TJ= –40°C to 85°C 15

LPV358-N,

Both amplifiers TJ= 25°C 15 20

TJ= –40°C to 85°C 24

LPV324-N,

All four amplifiers TJ= 25°C 28 42

TJ= –40°C to 85°C 46

(1) All limits are specified by testing or statistical analysis.

(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped

production material.

(3) Connected as voltage follower with 3V step input. Number specified is the slower of the positive and negative slew rates.

6.8 AC Electrical Characteristics – 5 V

TJ= 25°C, V+= 5 V, V−= 0 V, VCM = 2 V, VO= V+/2, and R L> 1MΩ(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT

SR Slew rate(3) 0.1 V/µs

GBWP Gain-bandwidth product CL= 22 pF 152 kHz

ΦmPhase margin 87 °

GmGain margin 19 dB

enInput-referred voltage noise f = 1 kHz 146 nV/√Hz

inInput-referred current noise f = 1 kHz 0.3 pA/√Hz

LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

6.9 Typical Characteristics

VS= 5 V, single supply, and TA= 25°C (unless otherwise noted)

Figure 1. Supply Current vs Supply Voltage (LPV321-N) Figure 2. Input Current vs Temperature

Figure 3. Sourcing Current vs Output Voltage Figure 4. Sourcing Current vs Output Voltage

Figure 5. Sinking Current vs Output Voltage Figure 6. Sinking Current vs Output Voltage

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

Typical Characteristics (continued)

VS= 5 V, single supply, and TA= 25°C (unless otherwise noted)

Figure 7. Output Voltage Swing vs Supply Voltage Figure 8. Input Voltage Noise vs Frequency

Figure 9. Input Current Noise vs Frequency Figure 10. Input Current Noise vs Frequency

Figure 11. Crosstalk Rejection vs Frequency Figure 12. PSRR vs Frequency

LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

Typical Characteristics (continued)

VS= 5 V, single supply, and TA= 25°C (unless otherwise noted)

Figure 13. CMRR vs Frequency Figure 14. CMRR vs Input Common Mode Voltage

Figure 15. CMRR vs Input Common Mode Voltage Figure 16. ΔVOS vs VCM

Figure 17. ΔVOS vs VCM Figure 18. Input Voltage vs Output Voltage

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

Typical Characteristics (continued)

VS= 5 V, single supply, and TA= 25°C (unless otherwise noted)

Figure 19. Input Voltage vs Output Voltage Figure 20. Open-Loop Frequency Response

Figure 21. Open-Loop Frequency Response Figure 22. Gain and Phase vs Capacitive Load

Figure 23. Gain and Phase vs Capacitive Load Figure 24. Slew Rate vs Supply Voltage

LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

Typical Characteristics (continued)

VS= 5 V, single supply, and TA= 25°C (unless otherwise noted)

Figure 25. Noninverting Large Signal Pulse Response Figure 26. Noninverting Small Signal Pulse Response

Figure 27. Inverting Large Signal Pulse Response Figure 28. Inverting Small Signal Pulse Response

Figure 29. Stability vs Capacitive Load Figure 30. Stability vs Capacitive Load

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

Typical Characteristics (continued)

VS= 5 V, single supply, and TA= 25°C (unless otherwise noted)

Figure 31. Stability vs Capacitive Load Figure 32. Stability vs Capacitive Load

Figure 33. THD vs Frequency Figure 34. Open-Loop Output Impedance vs Frequency

Figure 35. Short Circuit Current vs Temperature (Sinking) Figure 36. Short Circuit Current vs Temperature (Sourcing)

OUT

V+

V–

IN –

IN +

Texas Instruments Incorporated

LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

7 Detailed Description

7.1 Overview

The LPV321-N, LPV358-N, and LPV324-N devices are micropower (10-µA) versions of the popular LMV3xx-N.

The LPV321-N is the single-channel version. The LPV358-N is the dual, and the LPV324-N is the quad. The

LPV32x-N are the most cost effective solution for applications where low power and low voltage operation, space

efficiency, and low-price are important. The LPV3x-N have rail-to-rail output swing capability and the input

common-mode voltage range includes ground. They all exhibit excellent speed to power ratio, achieving 152 kHz

of bandwidth and 0.1-V/µs slew rate with 10 mA of supply current.

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 Size

The small footprints of the LPV3xx-N packages save space on printed circuit boards, and enable the design of

smaller electronic products (such as cellular phones, pagers, or other portable systems). The low profile of the

LPV3xx-N make them possible to use in PCMCIA type III cards.

7.3.2 Signal Integrity

Signals can pick up noise between the signal source and the amplifier. By using a physically smaller amplifier

package, the LPV3xx-N can be placed closer to the signal source, reducing noise pickup and increasing signal

integrity.

7.3.3 Simplified Board Layout

These products help avoid using long printed-circuit traces in the PCB. This means no additional components,

such as capacitors and resistors, are needed to filter out unwanted signals due to the interference between the

long printed-circuit traces.

7.3.4 Low Supply Current

These devices help maximize battery life. They are ideal for battery powered systems.

7.3.5 Low Supply Voltage

TI provides ensured performance at 2.7 V and 5 V. These specifications ensure operation throughout the battery

lifetime.

7.3.6 Rail-to-Rail Output

Rail-to-rail output swing provides maximum possible dynamic range at the output. This is particularly important

when operating on low-supply voltages.

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

Feature Description (continued)

7.3.7 Input Includes Ground

Allows direct sensing near GND in single supply operation.

The differential input voltage may be larger than V+without damaging the device. Protection should be provided

to prevent the input voltages from going negative more than −0.3 V (at 25°C). An input clamp diode with a

resistor to the IC input terminal can be used.

7.4 Device Functional Modes

The LPV3xx-N can be operated as a single-supply or a dual-supply operational amplifier depending on the

application.

7.4.1 Capacitive Load Tolerance

The LPV3xx-N can directly drive 200 pF in unity-gain without oscillation. The unity-gain follower is the most

sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers.

The combination of the amplifier's output impedance and the capacitive load induces phase lag. This results in

either an underdamped pulse response or oscillation. To drive a heavier capacitive load, circuit in Figure 37 can

be used.

Figure 37. Indirectly Driving A Capacitive Load Using Resistive Isolation

In Figure 37, the isolation resistor (RISO) and the load capacitor (CL) form a pole to increase stability by adding

more phase margin to the overall system. The desired performance depends on the value of RISO. The bigger the

RISO resistor value, the more stable VOUT is. Figure 38 is an output waveform of Figure 37 using 100 kΩfor RISO

and 1000 pF for CL.

Figure 38. Pulse Response of the LPV324 Circuit in Figure 37

LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

Device Functional Modes (continued)

The circuit in Figure 39 is an improvement to the one in Figure 37 because it provides DC accuracy as well as

AC stability. If there were a load resistor in Figure 37, the output would be voltage divided by RISO and the load

resistor. Instead, in Figure 39, RFprovides the DC accuracy by using feed-forward techniques to connect VIN to

RL. Caution is needed in choosing the value of RFdue to the input bias current of the LPV3xx-N. CFand RISO

serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back

to the amplifier's inverting input, thereby preserving phase margin in the overall feedback loop. Increased

capacitive drive is possible by increasing the value of CF. This in turn slows down the pulse response.

Figure 39. Indirectly Driving A Capacitive Load With DC Accuracy

7.4.2 Input Bias Current Cancellation

The LPV3xx-N family has a bipolar input stage. The typical input bias current of LPV3xx-N is 1.5 nA with 5-V

supply. Thus a 100-kΩinput resistor causes 0.15 mV of error voltage. By balancing the resistor values at both

inverting and noninverting inputs, the error caused by the amplifier's input bias current is reduced. The circuit in

Figure 40 shows how to cancel the error caused by input bias current.

Figure 40. Cancelling the Error Caused by Input Bias Current

c3 1

2 1 3

f2 R C

R R II R



LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

The LPV3xx-N family of amplifiers is specified for operation from 2.7 V to 5 V (±1.35 V to ±2.5 V). Many of the

specifications apply from –40°C to 125°C. They provide ground-sensing inputs as well as rail-to-rail output swing.

Parameters that can exhibit significant variance with regard to operating voltage or temperature are presented in

the Typical Characteristics.

8.2 Typical Applications

8.2.1 Simple Low-Pass Active Filter

A simple low-pass filter is shown in Figure 41.

Figure 41. Simple Low-Pass Active Filter Schematic

8.2.1.1 Design Requirements

The low-pass filter is shown in Figure 41 passes low frequencies and attenuate frequencies above corner

frequency (fc) at a roll-off rate of 20 dB/Decade.

8.2.1.2 Detailed Design Procedure

The low-frequency gain (ω→o) is defined by −R3/R1. This allows low-frequency gains other than unity to be

obtained. The filter has a −20 dB/decade roll-off after its corner frequency fc. R2must be chosen equal to the

parallel combination of R1and R3to minimize errors due to bais current. The frequency response of the filter is

shown in Figure 42.

(1)

 

OUT 2 1

OUT 2

R1 R2 R4 R2 R1 R2 R3 V

V V V

R3 R4 R1 R1 R3 R4 R1 2

for R1 R3 and R2 R4

R2 V

V V V1

R1 2

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 

 

LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

Typical Applications (continued)

Note that the single op amp active filters are used in to the applications that require low quality factor, Q (≤10),

low frequency (≤5 kHz), and low gain (≤10), or a small value for the product of gain times Q (≤100). The op

amp must have an open loop voltage gain at the highest frequency of interest at least 50 times larger than the

gain of the filter at this frequency. In addition, the selected op amp must have a slew rate that meets the

requirements in Equation 2.

Slew Rate ≥0.5 × (ωHVOPP) × 10−6V/µsec

where

•ωHis the highest frequency of interest

• VOPP is the output peak-to-peak voltage (2)

8.2.1.3 Application Curve

Figure 42. Frequency Response of Simple Low-pass Active Filter

8.2.2 Difference Amplifier

The difference amplifier allows the subtraction of two voltages or, as a special case, the cancellation of a signal

common to two inputs. It is useful as a computational amplifier in making a differential to single-ended conversion

or in rejecting a common mode signal.

Figure 43. Difference Amplifier Schematic

(3)

8.2.3 Instrumentation Circuits

The input impedance of the previous difference amplifier is set by the resistor R1, R2, R3, and R4. To eliminate

the problems of low input impedance, one way is to use a voltage follower ahead of each input as shown in the

following two instrumentation amplifiers.

 

O 2 1

V 1 V V ,where R1 R4 and R2 R3

As shown: V 2 V V

§ ·

 

¨ ¸



LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

Typical Applications (continued)

8.2.3.1 Three Operating Amplifier Instrumentation

The quad LPV324 can be used to build a three-op-amp instrumentation amplifier as shown in Figure 44

Figure 44. Three-op-amp Instrumentation Amplifier Schematic

The first stage of this instrumentation amplifier is a differential-input, differential-output amplifier, with two voltage

followers. These two voltage followers assure that the input impedance is over 100 MΩ. The gain of this

instrumentation amplifier is set by the ratio of R2/R1. R3should equal R1and R4equal R2. Matching of R3to R1

and R4to R2affects the CMRR. For good CMRR over temperature, low drift resistors should be used. Making R4

Slightly smaller than R 2and adding a trim pot equal to twice the difference between R 2and R4will allow the

CMRR to be adjusted for optimum.

8.2.3.2 Two Operating Amplifier Instrumentation

A two-op-amp instrumentation amplifier can also be used to make a high-input-impedance DC differential

amplifier (Figure 45). As in the three-op-amp circuit, this instrumentation amplifier requires precise resistor

matching for good CMRR. R4should equal to R1and R3must equal R2.

Figure 45. Two-op-amp Instrumentation Amplifier Schematic

(4)

8.2.3.3 Single-Supply Inverting Amplifier

There may be cases where the input signal going into the amplifier is negative. Because the amplifier is

operating in single supply voltage, a voltage divider using R3and R4is implemented to bias the amplifier so the

input signal is within the input common-common voltage range of the amplifier. The capacitor C1is placed

between the inverting input and resistor R1to block the DC signal going into the AC signal source, VIN. The

values of R1and C1affect the cutoff frequency in Equation 5.

fc = 1/2πR1C1(5)

OUT IN

V V



LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

Typical Applications (continued)

As a result, the output signal is centered around mid-supply (if the voltage divider provides V+/2 at the non-

inverting input). The output can swing to both rails, maximizing the signal-to-noise ratio in a low voltage system.

Figure 46. Single-Supply Inverting Amplifier

(6)

9 Power Supply Recommendations

The LPV3xx-N is specified for operation from 2.7 V to 5.5 V; many specifications apply from –40°C to 125°C.

Parameters that can exhibit significant variance with regard to operating voltage or temperature are presented in

the Typical Characteristics.

Place 0.1-µF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high

impedance power supplies. For more detailed information on bypass capacitor placement, see Layout Guidelines

section.

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

10 Layout

10.1 Layout Guidelines

For best operational performance, use good PCB layout practices including:

• Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the operational

amplifier. Bypass capacitors are used to reduce the coupled noise by providing low impedance power

sources local to the analog circuitry.

• Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as close

to the device as possible. A single bypass capacitor from V+ to ground is applicable for single supply

applications.

• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective

methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.

A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital

and analog grounds, paying attention to the flow of the ground current. For more detailed information, see

Circuit Board Layout Techniques (SLOA089).

• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If

it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as

opposed to in parallel with the noisy trace.

• Place the external components as close to the device as possible. Keeping RF and RG close to the inverting

input minimizes parasitic capacitance, as shown in Figure 47.

• Keep the length of input traces as short as possible. Always remember that the input traces are the most

sensitive part of the circuit.

• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce

leakage currents from nearby traces that are at different potentials.

10.2 Layout Example

Figure 47. Operational Amplifier Board Layout for Noninverting Configuration

LPV321-N

LPV324-N

LPV358-N

www.ti.com

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

Product Folder Links: LPV321-N LPV324-N LPV358-N

11 Device and Documentation Support

11.1 Device Support

11.1.1 Development Support

•LPV321-N PSPICE Model (SNOM026)

•LPV358-N PSPICE Model (SNOM022)

•LPV324-N PSPICE Model (SNOM027)

•TINA-TI SPICE-Based Analog Simulation Program

•DIP Adapter Evaluation Module

•TI Universal Operational Amplifier Evaluation Module

•TI Filterpro Software

11.2 Documentation Support

11.2.1 Related Documentation

For related documentation see the following:

•Handbook of Operational Amplifier Applications (SBOA092)

•Compensate Transimpedance Amplifiers Intuitively (SBOA055)

•Circuit Board Layout Techniques (SLOA089)

•AN-1803 Design Considerations for a Transimpedance Amplifier (SNOA515)

11.3 Related Links

The table below lists quick access links. Categories include technical documents, support and community

resources, tools and software, and quick access to sample or buy.

Table 1. Related Links

PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL

DOCUMENTS TOOLS &

SOFTWARE SUPPORT &

COMMUNITY

LPV321-N Click here Click here Click here Click here Click here

LPV324-N Click here Click here Click here Click here Click here

LPV358-N Click here Click here Click here Click here Click here

11.4 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper

right corner, click on Alert me to register and receive a weekly digest of any product information that has

changed. For change details, review the revision history included in any revised document.

11.5 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

11.6 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

LPV321-N

LPV324-N

LPV358-N

SNOS413E –AUGUST 2000–REVISED NOVEMBER 2016

www.ti.com

Product Folder Links: LPV321-N LPV324-N LPV358-N

11.7 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

11.8 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM

www.ti.com 11-Jan-2021

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead finish/

Ball material

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LPV321M5/NOPB ACTIVE SOT-23 DBV 5 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 A27A

LPV321M5X/NOPB ACTIVE SOT-23 DBV 5 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 A27A

LPV321M7 NRND SC70 DCK 5 1000 Non-RoHS

& Green Call TI Call TI -40 to 85 A19

LPV321M7/NOPB ACTIVE SC70 DCK 5 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 A19

LPV321M7X/NOPB ACTIVE SC70 DCK 5 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 A19

LPV324M/NOPB ACTIVE SOIC D 14 55 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LPV324M

LPV324MT/NOPB ACTIVE TSSOP PW 14 94 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LPV324

LPV324MTX NRND TSSOP PW 14 2500 Non-RoHS

& Green Call TI Call TI -40 to 85 LPV324

LPV324MTX/NOPB ACTIVE TSSOP PW 14 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LPV324

LPV324MX NRND SOIC D 14 2500 Non-RoHS

& Green Call TI Call TI -40 to 85 LPV324M

LPV324MX/NOPB ACTIVE SOIC D 14 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LPV324M

LPV358M/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM LPV

358M

LPV358MM/NOPB ACTIVE VSSOP DGK 8 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 P358

LPV358MMX/NOPB ACTIVE VSSOP DGK 8 3500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 P358

LPV358MX NRND SOIC D 8 2500 Non-RoHS

& Green Call TI Call TI -40 to 85 LPV

358M

LPV358MX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LPV

358M

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PACKAGE OPTION ADDENDUM

www.ti.com 11-Jan-2021

Addendum-Page 2

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LPV321M5/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LPV321M5X/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LPV321M7 SC70 DCK 5 1000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3

LPV321M7/NOPB SC70 DCK 5 1000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3

LPV321M7X/NOPB SC70 DCK 5 3000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3

LPV324MTX TSSOP PW 14 2500 330.0 12.4 6.95 5.6 1.6 8.0 12.0 Q1

LPV324MTX/NOPB TSSOP PW 14 2500 330.0 12.4 6.95 5.6 1.6 8.0 12.0 Q1

LPV324MX SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1

LPV324MX/NOPB SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1

LPV358MM/NOPB VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LPV358MMX/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LPV358MX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LPV358MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 29-Sep-2019

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LPV321M5/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0

LPV321M5X/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0

LPV321M7 SC70 DCK 5 1000 210.0 185.0 35.0

LPV321M7/NOPB SC70 DCK 5 1000 210.0 185.0 35.0

LPV321M7X/NOPB SC70 DCK 5 3000 210.0 185.0 35.0

LPV324MTX TSSOP PW 14 2500 367.0 367.0 35.0

LPV324MTX/NOPB TSSOP PW 14 2500 367.0 367.0 35.0

LPV324MX SOIC D 14 2500 367.0 367.0 35.0

LPV324MX/NOPB SOIC D 14 2500 367.0 367.0 35.0

LPV358MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0

LPV358MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0

LPV358MX SOIC D 8 2500 367.0 367.0 35.0

LPV358MX/NOPB SOIC D 8 2500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 29-Sep-2019

Pack Materials-Page 2

www.ti.com

PACKAGE OUTLINE

0.22

0.08 TYP

0.25

3.0

2.6

2X 0.95

1.9

1.45

0.90

0.15

0.00 TYP

5X 0.5

0.3

0.6

0.3 TYP

0 TYP

1.9

3.05

2.75

1.75

1.45

(1.1)

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/E 09/2019

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

0.2 C A B

INDEX AREA

PIN 1

GAGE PLANE

SEATING PLANE

0.1 C

SCALE 4.000

www.ti.com

EXAMPLE BOARD LAYOUT

0.07 MAX

ARROUND 0.07 MIN

ARROUND

5X (1.1)

5X (0.6)

(2.6)

(1.9)

2X (0.95)

(R0.05) TYP

4214839/E 09/2019

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

NOTES: (continued)

5. Publication IPC-7351 may have alternate designs.

6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

SYMM

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

PKG

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

DEFINED

EXPOSED METAL

METAL

SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

EXPOSED METAL

www.ti.com

EXAMPLE STENCIL DESIGN

(2.6)

(1.9)

2X(0.95)

5X (1.1)

5X (0.6)

(R0.05) TYP

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/E 09/2019

NOTES: (continued)

7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

8. Board assembly site may have different recommendations for stencil design.

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

SYMM

PKG

www.ti.com

PACKAGE OUTLINE

.228-.244 TYP

[5.80-6.19]

.069 MAX

[1.75]

6X .050

[1.27]

8X .012-.020

[0.31-0.51]

.150

[3.81]

.005-.010 TYP

[0.13-0.25]

0 - 8 .004-.010

[0.11-0.25]

.010

[0.25]

.016-.050

[0.41-1.27]

4X (0 -15 )

.189-.197

[4.81-5.00]

NOTE 3

B .150-.157

[3.81-3.98]

NOTE 4

4X (0 -15 )

(.041)

[1.04]

SOIC - 1.75 mm max heightD0008A

SMALL OUTLINE INTEGRATED CIRCUIT

4214825/C 02/2019

NOTES:

1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.

Dimensioning and tolerancing per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed .006 [0.15] per side.

4. This dimension does not include interlead flash.

5. Reference JEDEC registration MS-012, variation AA.

.010 [0.25] C A B

PIN 1 ID AREA

SEATING PLANE

.004 [0.1] C

SEE DETAIL A

DETAIL A

TYPICAL

SCALE 2.800

www.ti.com

EXAMPLE BOARD LAYOUT

.0028 MAX

[0.07]

ALL AROUND

.0028 MIN

[0.07]

ALL AROUND

(.213)

[5.4]

6X (.050 )

[1.27]

8X (.061 )

[1.55]

8X (.024)

[0.6]

(R.002 ) TYP

[0.05]

SOIC - 1.75 mm max heightD0008A

SMALL OUTLINE INTEGRATED CIRCUIT

4214825/C 02/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

METAL SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

EXPOSED

METAL

OPENING

SOLDER MASK METAL UNDER

SOLDER MASK

DEFINED

EXPOSED

METAL

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:8X

SYMM

SEE

DETAILS

SYMM

www.ti.com

EXAMPLE STENCIL DESIGN

8X (.061 )

[1.55]

8X (.024)

[0.6]

6X (.050 )

[1.27] (.213)

[5.4]

(R.002 ) TYP

[0.05]

SOIC - 1.75 mm max heightD0008A

SMALL OUTLINE INTEGRATED CIRCUIT

4214825/C 02/2019

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

SOLDER PASTE EXAMPLE

BASED ON .005 INCH [0.125 MM] THICK STENCIL

SCALE:8X

SYMM

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