AT42QT1070-MMH - MICROCHIP TECHNOLOGY

Application 1: the ACS770 outputs an analog

signal, VOUT

, that varies linearly with the

bidirectional AC or DC primary sampled cur-

rent, IP

, within the range specified. RF and

CF are for optimal noise management, with

values that depend on the application.

ACS770xCB

The Allegro™ ACS770 family of current sensor ICs provides

economical and precise solutions for AC or DC current sensing.

Typical applications include motor control, load detection and

management, power supply and DC-to-DC converter control,

inverter control, and overcurrent fault detection.

The device consists of a precision, low-offset linear Hall

circuit with a copper conduction path located near the die.

Applied current flowing through this copper conduction

path generates a magnetic field that is concentrated by a low

magnetic hysteresis core, then converted by the Hall IC into a

proportional voltage. Device accuracy is optimized through the

close proximity of the magnetic signal to the Hall transducer.

A precise, proportional output voltage is provided by the

low-offset, chopper-stabilized BiCMOS Hall IC, which is

programmed for accuracy at the factory. Proprietary digital

temperature compensation technology greatly improves the

IC accuracy and temperature stability without influencing the

high-bandwidth operation of the analog output.

High-level immunity to current conductor dV/dt and stray

electric fields is offered by Allegro proprietary integrated shield

technology for low output voltage ripple and low offset drift

in high-side, high-voltage applications.

The output of the device has a positive slope (>VCC/2 for

bidirectional devices) when an increasing current flows

through the primary copper conduction path (from terminal 4

to terminal 5), which is the path used for current sampling. The

internal resistance of this conductive path is 100 µΩ typical,

providing low power loss.

ACS770-DS, Rev. 10

MCO-0000205

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

Continued on the next page…

Typical Application

5 V

VOUT

CBYP

0.1 µF

IP+

IP–

GND

ACS770

VIOUT

VCC

• Industry-leading total output accuracy achieved with new

piecewise linear digital temperature compensation of

offset and sensitivity

• Industry-leading noise performance through proprietary

amplifier and filter design techniques

• 120 kHz typical bandwidth

• 4.1 µs output rise time in response to step input current

• Integrated shield greatly reduces capacitive coupling

from current conductor to die due to high dV/dt signals,

and prevents offset drift in high-side, high-voltage

applications

• Greatly improved total output error through digitally

programmed and compensated gain and offset over the

full operating temperature range

• Small package size, with easy mounting capability

• Monolithic Hall IC for high reliability

• Ultralow power loss: 100 µΩ internal conductor

resistance

• Galvanic isolation allows use in economical, high-side

current sensing in high-voltage systems

• 4.5 to 5.5 V, single supply operation

• Output voltage proportional to AC or DC currents

• Factory-trimmed for accuracy

• Extremely stable output offset voltage

PFF

Leadform

PSF

Leadform

Additional leadforms available for qualifying volumes

Type

tested

PACKAGE: 5-pin package (suffix CB)

Continued on the next page…

DESCRIPTION

FEATURES AND BENEFITS

TÜV America

Certificate Number:

U8V 14 05 54214 037

December 6, 2018

PSS

Leadform

CB Certicate Number:

US-29755-UL

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

The thickness of the copper conductor allows survival of the device

at high overcurrent conditions. The terminals of the conductive path

are electrically isolated from the signal leads (pins 1 through 3). This

allows the ACS770 family of sensor ICs to be used in applications

requiring electrical isolation without the use of opto-isolators or

other costly isolation techniques.

The device is fully calibrated prior to shipment from the factory.

The ACS770 family is lead (Pb) free. All leads are plated with 100%

matte tin, and there is no Pb inside the package. The heavy gauge

leadframe is made of oxygen-free copper.

DESCRIPTION (continued)

SELECTION GUIDE

Part Number [1]

Package Primary Sampled

Current, IP

(A)

Sensitivity

Sens (Typ.)

(mV/A)

Current

Directionality

TOP

(°C) Packing [2]

Terminals Signal Pins

ACS770LCB-050B-PFF-T Formed Formed ±50 40.Bidirectional

–40 to 150

34 pieces

per tube

ACS770LCB-050U-PFF-T Formed Formed 50 80.Unidirectional

ACS770LCB-100B-PFF-T Formed Formed ±100 20.Bidirectional

ACS770LCB-100B-PSS-T Straight Straight ±100 20 Bidirectional

ACS770LCB-100U-PFF-T Formed Formed 100 40.Unidirectional

ACS770LCB-100U-PSF-T [3] Straight Formed 100 40.Unidirectional

ACS770KCB-150B-PFF-T Formed Formed ±150 13.3 Bidirectional

–40 to 125

ACS770KCB-150B-PSF-T Straight Formed ±150 13.3 Bidirectional

ACS770KCB-150B-PSS-T Straight Straight ±150 13.3 Bidirectional

ACS770KCB-150U-PFF-T Formed Formed 150 26.7 Unidirectional

ACS770KCB-150U-PSF-T Straight Formed 150 26.7 Unidirectional

ACS770ECB-200B-PFF-T Formed Formed ±200 10.Bidirectional

–40 to 85

ACS770ECB-200B-PSF-T Straight Formed ±200 10.Bidirectional

ACS770ECB-200U-PFF-T Formed Formed 200 20.Unidirectional

ACS770ECB-200U-PSF-T Straight Formed 200 20.Unidirectional

[1] Additional leadform options available for qualied volumes.

[2] Contact Allegro for additional packing options.

[3] ACS770LCB-100U-PSF-T part variant is in production but has been determined to be LAST TIME BUY. This classication indicates that the product is obsolete and no-

tice has been given. Sale of this device is currently restricted to existing customer applications. The device should not be purchased for new design applications because

of obsolescence in the near future. Samples are no longer available. Date of status change: June 5, 2017. Deadline for receipt of LAST TIME BUY orders: December 31,

2017. For existing customer transition, and for new customers or new applications, contact Allegro.

• Undervoltage lockout for VCC below specification

• AEC-Q100 automotive qualified

• UL certified, File No. US-29755-UL

FEATURES AND BENEFITS (continued)

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

ISOLATION CHARACTERISTICS

Characteristic Symbol Notes Rating Unit

Dielectric Surge Strength Test Voltage VSURGE Tested ±5 pulses at 2/minute in compliance to IEC 61000-4-5

1.2 µs (rise) / 50 µs (width) 8000 V

Dielectric Strength Test Voltage [1] VISO Agency type-tested for 60 seconds per

UL standard 60950-1, 2nd Edition 4800 VAC

Working Voltage for Basic Isolation VWFSI For basic (single) isolation per UL standard 60950-1, 2nd

Edition

990 VDC or Vpk

700 Vrms

Working Voltage for Reinforced Isolation VWFRI For reinforced (double) isolation per UL standard 60950-1,

2nd Edition

636 VDC or Vpk

450 Vrms

[1] 60-second testing is only done during the UL certication process. In production, Allegro conducts 1-second isolation testing according to UL 60950-1, 2nd Edition.

ABSOLUTE MAXIMUM RATINGS

Characteristic Symbol Notes Rating Unit

Forward Supply Voltage VCC 6 V

Reverse Supply Voltage VRCC –0.5 V

Forward Output Voltage VIOUT 25 V

Reverse Output Voltage VRIOUT –0.5 V

Output Source Current IOUT(Source) VIOUT to GND 3 mA

Output Sink Current IOUT(Sink) Minimum pull-up resistor of 500 Ω, from VCC to VIOUT 10 mA

Nominal Operating Ambient Temperature TOP

Range E –40 to 85 °C

Range K –40 to 125 °C

Range L –40 to 150 °C

Maximum Junction TJ(max) 165 °C

Storage Temperature Tstg –65 to 165 °C

SPECIFICATIONS

THERMAL CHARACTERISTICS: May require derating at maximum conditions

Characteristic Symbol Test Conditions [2] Value Unit

Package Thermal Resistance RθJA

Mounted on the Allegro evaluation board with 2800 mm2

(1400 mm2 on component side and 1400 mm2 on

opposite side) of 4 oz. copper connected to the primary

leadframe and with thermal vias connecting the copper

layers. Performance is based on current flowing through

the primary leadframe and includes the power consumed

by the PCB.

7 °C/W

[2] Additional thermal information available on the Allegro website.

TYPICAL OVERCURRENT CAPABILITIES [3][4]

Characteristic Symbol Notes Rating Unit

Overcurrent IPOC

TA = 25°C, 1 second duration, 1% duty cycle 1200 A

TA = 85°C, 1 second duration, 1% duty cycle 900 A

TA = 150°C, 1 second duration, 1% duty cycle 600 A

[3] Test was done with Allegro evaluation board. The maximum allowed current is limited by TJ(max) only.

[4] For more overcurrent proles, please see FAQ on the Allegro website, www.allegromicro.com.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

IP+

IP–

VIOUT

GND

VCC

Terminal List Table

Number Name Description

1 VCC Device power supply terminal

2 GND Signal ground terminal

3 VIOUT Analog output signal

4 IP+ Terminal for current being sampled

5 IP– Terminal for current being sampled

Functional Block Diagram

Pinout Diagram

V+

Dynamic Offset

Cancellation

EEPROM and

Control Logic

VCC

GND

VIOUT

Signal Recovery

To all subcircuits

CBYP

Temperature

Sensor

Offset ControlSensitivity Control

Programming

Control

IP–

IP+

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

COMMON OPERATING CHARACTERISTICS: Valid at TOP = –40°C to 150°C, CBYP = 0.1 µF, and VCC = 5 V,

unless otherwise specied

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Supply Voltage VCC 4.5 5.0 5.5 V

Supply Current ICC Output open – 10 15 mA

Supply Zener Voltage VZTA = 25°C, ICC = 30 mA 6.5 7.5 – V

Power-On Delay [1][2] tPOD TA = 25°C, CBYP = open – 90 – µs

Temperature Compensation

Power-On Time [1] tTC TA = 25°C, CBYP = open – 90 – µs

Undervoltage Lockout (UVLO)

Threshold [1]

VUVLOH TA = 25°C, VCC rising – 3.8 – V

VUVLOL TA = 25°C, VCC falling – 3 – V

UVLO Enable/Disable Delay

Time [1][2]

tUVLOE TA = 25°C, CBYP = open, VCC Fall Time (5 V to 3 V) = 1 μs – 75 – µs

tUVLOD TA = 25°C, CBYP = Open,

VCC Recover Time (3 V to 5 V) = 1 μs – 14 – µs

Power-On Reset Voltage [1] VPORH TA = 25°C, VCC rising – 2.9 – V

VPORL TA = 25°C, VCC falling – 2.7 – V

Rise Time [1][2] trIP step = 60% of IP+, 10% to 90% rise time, TA = 25°C,

CL = 0.47 nF – 4.1 – µs

Propagation Delay Time [1][2] tPROP IP step = 60% of IP+, 20% input to 20% output, TA = 25°C,

CL = 0.47 nF – 2.4 – µs

Response Time [1][2] tRESPONSE IP step = 60% of IP+, 80% input to 80% output, TA = 25°C,

COUT = 0.47 nF – 4.6 – µs

Internal Bandwidth BWi–3 dB; TA = 25°C, CL = 0.47 nF – 120 – kHz

Output Load Resistance RLVIOUT to GND 4.7 – – kΩ

Output Load Capacitance CLVIOUT to GND – – 10 nF

Primary Conductor Resistance RPRIMARY TA = 25°C – 100 – µΩ

Quiescent Output Voltage [1] VIOUT(QBI) Bidirectional variant, IP = 0 A, TA = 25°C – VCC/2 – V

VIOUT(QUNI) Unidirectional variant, IP = 0 A, TA = 25°C – 0.5 – V

Ratiometry [1] VRAT VCC = 4.5 to 5.5 V – 100 – %

[1] See Characteristic Denitions section of this datasheet.

[2] See Timing Data Section of this datasheet.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

X050B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC

= 5 V, unless otherwise specied

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP–50 – 50 A

Sensitivity [2]

SensTA Measured using full-scale IP

, TA = 25°C 39.04 40 40.96 mV/A

Sens(TOP)HT Measured using full-scale IP

, TOP = 25°C to 150°C 39.04 40 40.96 mV/A

Sens(TOP)LT Measured using full-scale IP

, TOP = –40°C to 25°C 38.6 40 41.4 mV/A

Sensitivity Drift Over Lifetime [3] ΔSensLIFE TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –0.72 ±0.24 0.72 mV/A

Noise [4] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 10 – mV

Nonlinearity ELIN Measured using full-scale and half-scale IP, –1 – 1 %

Electrical Offset Voltage [5][6]

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime [3] ∆VOE(LIFE) IP = 0 A, TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 50 A – 120 300 mA

Total Output Error [7]

ETOT(TA) Measured using full-scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full-scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full-scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime [3] ΔETOT(LIFE) TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –1.9 ±0.6 1.9 %

[1] See Characteristic Performance Data page for parameter distributions over temperature range.

[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[3] Based on characterization data obtained during standardized stress test for Qualication of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.

Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.

[4] ±3 sigma noise voltage.

[5] Drift is referred to ideal VIOUT(QBI) = 2.5 V.

[6] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.

[7] This parameter may drift a maximum of ΔETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

X050U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC

= 5 V, unless otherwise specied

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP0 – 50 A

Sensitivity [2]

SensTA Measured using full-scale IP

, TA = 25°C 78.08 80 81.92 mV/A

Sens(TOP)HT Measured using full-scale IP

, TOP = 25°C to 150°C 78.08 80 81.92 mV/A

Sens(TOP)LT Measured using full-scale IP

, TOP = –40°C to 25°C 77.2 80 82.8 mV/A

Sensitivity Drift Over Lifetime [3] ΔSensLIFE TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –1.44 ±0.48 1.44 mV/A

Noise [4] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 20 – mV

Nonlinearity ELIN Measured using full-scale and half-scale IP –1 – 1 %

Electrical Offset Voltage [5][6]

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime [3] ∆VOE(LIFE) IP = 0 A, TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 50 A – 120 300 mA

Total Output Error [7]

ETOT(TA) Measured using full-scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full-scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full-scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime [3] ΔETOT(LIFE) TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –1.9 ±0.6 1.9 %

[1] See Characteristic Performance Data page for parameter distributions over temperature range.

[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[3] Based on characterization data obtained during standardized stress test for Qualication of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.

Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.

[4] ±3 sigma noise voltage.

[5] Drift is referred to ideal VIOUT(QBI) = 0.5 V.

[6] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.

[7] This parameter may drift a maximum of ΔETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

X100B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC

= 5 V, unless otherwise specied

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP–100 – 100 A

Sensitivity [2]

SensTA Measured using full-scale IP

, TA = 25°C 19.52 20 20.48 mV/A

Sens(TOP)HT Measured using full-scale IP

, TOP = 25°C to 150°C 19.52 20 20.48 mV/A

Sens(TOP)LT Measured using full-scale IP

, TOP = –40°C to 25°C 19.3 20 20.7 mV/A

Sensitivity Drift Over Lifetime [3] ΔSensLIFE TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –0.36 ±0.12 0.36 mV/A

Noise [4] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6 – mV

Nonlinearity ELIN Measured using full-scale and half-scale IP –1 – 1 %

Electrical Offset Voltage [5][6]

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime [3] ∆VOE(LIFE) IP = 0 A, TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 100 A – 170 400 mA

Total Output Error [7]

ETOT(TA) Measured using full-scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full-scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full-scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime [3] ΔETOT(LIFE) TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –1.9 ±0.6 1.9 %

[1] See Characteristic Performance Data page for parameter distributions over temperature range.

[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[3] Based on characterization data obtained during standardized stress test for Qualication of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.

Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.

[4] ±3 sigma noise voltage.

[5] Drift is referred to ideal VIOUT(QBI) = 2.5 V.

[6] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.

[7] This parameter may drift a maximum of ΔETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

X100U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC

= 5 V, unless otherwise specied

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP0 – 100 A

Sensitivity [2]

SensTA Measured using full-scale IP

, TA = 25°C 39.04 40 40.96 mV/A

Sens(TOP)HT Measured using full-scale IP

, TOP = 25°C to 150°C 39.04 40 40.96 mV/A

Sens(TOP)LT Measured using full-scale IP

, TOP = –40°C to 25°C 38.6 40 41.4 mV/A

Sensitivity Drift Over Lifetime [3] ΔSensLIFE TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –0.72 ±0.24 0.72 mV/A

Noise [4] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 12 – mV

Nonlinearity ELIN Measured using full-scale and half-scale IP –1 – 1 %

Electrical Offset Voltage [5][6]

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime [3] ∆VOE(LIFE) IP = 0 A, TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 100 A – 170 400 mA

Total Output Error [7]

ETOT(TA) Measured using full-scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full-scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full-scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime [3] ΔETOT(LIFE) TOP = –40°C to 150°C, shift after AEC-Q100 grade 0

qualification testing –1.9 ±0.6 1.9 %

[1] See Characteristic Performance Data page for parameter distributions over temperature range.

[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[3] Based on characterization data obtained during standardized stress test for Qualication of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.

Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.

[4] ±3 sigma noise voltage.

[5] Drift is referred to ideal VIOUT(QBI) = 0.5 V.

[6] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.

[7] This parameter may drift a maximum of ΔETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

X150B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 125°C, CBYP = 0.1 μF, VCC

= 5 V, unless otherwise specied

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP–150 – 150 A

Sensitivity [2]

SensTA Measured using full-scale IP

, TA = 25°C 13.01 13.33 13.65 mV/A

Sens(TOP)HT Measured using full-scale IP

, TOP = 25°C to 125°C 13.01 13.33 13.65 mV/A

Sens(TOP)LT Measured using full-scale IP

, TOP = –40°C to 25°C 12.86 13.33 13.8 mV/A

Sensitivity Drift Over Lifetime [3] ΔSensLIFE TOP = –40°C to 125°C, shift after AEC-Q100 grade 0

qualification testing –0.24 ±0.08 0.24 mV/A

Noise [4] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 4 – mV

Nonlinearity ELIN Measured using full-scale and half-scale IP –1 – 1 %

Electrical Offset Voltage [5][6]

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime [3] ∆VOE(LIFE) IP = 0 A, TOP = –40°C to 125°C, shift after AEC-Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 150 A – 225 400 mA

Total Output Error [7]

ETOT(TA) Measured using full-scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full-scale IP

, TOP = 25°C to 125°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full-scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime [3] ΔETOT(LIFE) TOP = –40°C to 125°C, shift after AEC-Q100 grade 0

qualification testing –1.9 ±0.6 1.9 %

Symmetry ESYM Over half-scale of IP99 100 101 %

[1] See Characteristic Performance Data page for parameter distributions over temperature range.

[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[3] Based on characterization data obtained during standardized stress test for Qualication of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.

Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.

[4] ±3 sigma noise voltage.

[5] Drift is referred to ideal VIOUT(QBI) = 2.5 V.

[6] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.

[7] This parameter may drift a maximum of ΔETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

X150U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 125°C, CBYP = 0.1 μF, VCC

= 5 V, unless otherwise specied

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP0 – 150 A

Sensitivity [2]

SensTA Measured using full-scale IP

, TA = 25°C 26.02 26.66 27.30 mV/A

Sens(TOP)HT Measured using full-scale IP

, TOP = 25°C to 125°C 26.02 26.66 27.30 mV/A

Sens(TOP)LT Measured using full-scale IP

, TOP = –40°C to 25°C 25.73 26.66 27.59 mV/A

Sensitivity Drift Over Lifetime [3] ΔSensLIFE TOP = –40°C to 125°C, shift after AEC-Q100 grade 0

qualification testing –0.48 ±0.16 0.48 mV/A

Noise [4] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6 – mV

Nonlinearity ELIN Measured using full-scale and half-scale IP –1 – 1 %

Electrical Offset Voltage [5][6]

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime [3] ∆VOE(LIFE) IP = 0 A, TOP = –40°C to 125°C, shift after AEC-Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 150 A – 225 400 mA

Total Output Error [7]

ETOT(TA) Measured using full-scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full-scale IP

, TOP = 25°C to 125°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full-scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime [3] ΔETOT(LIFE) TOP = –40°C to 125°C, shift after AEC-Q100 grade 0

qualification testing –1.9 ±0.6 1.9 %

[1] See Characteristic Performance Data page for parameter distributions over temperature range.

[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[3] Based on characterization data obtained during standardized stress test for Qualication of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.

Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.

[4] ±3 sigma noise voltage.

[5] Drift is referred to ideal VIOUT(QBI) = 0.5 V.

[6] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.

[7] This parameter may drift a maximum of ΔETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

X200B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 85°C, CBYP = 0.1 μF, VCC

= 5 V, unless otherwise specied

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP–200 – 200 A

Sensitivity [2]

SensTA Measured using full-scale IP

, TA = 25°C 9.76 10 10.24 mV/A

Sens(TOP)HT Measured using full-scale IP

, TOP = 25°C to 85°C 9.76 10 10.24 mV/A

Sens(TOP)LT Measured using full-scale IP

, TOP = –40°C to 25°C 9.65 10 10.35 mV/A

Sensitivity Drift Over Lifetime [3] ΔSensLIFE TOP = –40°C to 85°C, shift after AEC-Q100 grade 0

qualification testing –0.18 ±0.06 0.18 mV/A

Noise [4] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 3 – mV

Nonlinearity ELIN Measured using full-scale and half-scale IP –1 – 1 %

Electrical Offset Voltage [5][6]

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime [3] ∆VOE(LIFE) IP = 0 A, TOP = –40°C to 85°C, shift after AEC-Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 250 575 mA

Total Output Error [7]

ETOT(TA) Measured using full-scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full-scale IP

, TOP = 25°C to 85°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full-scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime [3] ΔETOT(LIFE) TOP = –40°C to 85°C, shift after AEC-Q100 grade 0

qualification testing –1.9 ±0.6 1.9 %

[1] See Characteristic Performance Data page for parameter distributions over temperature range.

[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[3] Based on characterization data obtained during standardized stress test for Qualication of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift

is a function of customer application conditions. Contact Allegro MicroSystems for further information.

[4] ±3 sigma noise voltage.

[5] Drift is referred to ideal VIOUT(QBI) = 2.5 V.

[6] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.

[7] This parameter may drift a maximum of ΔETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

X200U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 85°C, CBYP = 0.1 μF, VCC

= 5 V, unless otherwise specied

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP0 – 200 A

Sensitivity [2]

SensTA Measured using full-scale IP

, TA = 25°C 19.52 20 20.48 mV/A

Sens(TOP)HT Measured using full-scale IP

, TOP = 25°C to 85°C 19.52 20 20.48 mV/A

Sens(TOP)LT Measured using full-scale IP

, TOP = –40°C to 25°C 19.3 20 20.7 mV/A

Sensitivity Drift Over Lifetime [3] ΔSensLIFE TOP = –40°C to 85°C, shift after AEC-Q100 grade 0

qualification testing –0.36 ±0.12 0.36 mV/A

Noise [4] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6 – mV

Nonlinearity ELIN Measured using full-scale and half-scale IP –1 – 1 %

Electrical Offset Voltage [5][6]

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime [3] ∆VOE(LIFE) IP = 0 A, TOP = –40°C to 85°C, shift after AEC-Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 250 575 mA

Total Output Error [7]

ETOT(TA) Measured using full-scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full-scale IP

, TOP = 25°C to 85°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full-scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime [3] ΔETOT(LIFE) TOP = –40°C to 85°C, shift after AEC-Q100 grade 0

qualification testing –1.9 ±0.6 1.9 %

[1] See Characteristic Performance Data page for parameter distributions over temperature range.

[2] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[3] Based on characterization data obtained during standardized stress test for Qualication of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.

Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.

[4] ±3 sigma noise voltage.

[5] Drift is referred to ideal VIOUT(QBI) = 0.5 V.

[6] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime.

[7] This parameter may drift a maximum of ΔETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

CHARACTERISTIC PERFORMANCE DATA

Data Taken using the ACS770LCB-050B

Accuracy Data

Mean

Mean + 3 sigma Mean – 3 sigma

-2

-4

-6

-8

–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

41.0

40.8

40.6

40.4

40.2

40.0

39.8

39.6

39.4

2.5

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

VOE (mV)

ELIN (%)

Sens (mV/A)

ETOT (%)

(°C)T

(°C)

250

200

150

100

IERROM (mA)

(°C)

Electrical Offset Voltage versus Ambient Temperature

Nonlinearity versus Ambient Temperature

Sensitivity versus Ambient Temperature

Total Output Error versus Ambient Temperature

Magnetic Offset Error versus Ambient Temperature

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Mean

Mean + 3 sigma Mean – 3 sigma

-2

-4

-6

-8

–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

20.4

20.3

20.2

20.1

20.0

19.9

19.8

19.7

19.6

VOE (mV)

ELIN (%)

Sens (mV/A)

ETOT (%)

(°C)T

(°C)

400

350

300

250

200

150

100

2.5

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

IERROM (mA)

(°C)

Electrical Offset Voltage versus Ambient Temperature

Nonlinearity versus Ambient Temperature

Sensitivity versus Ambient Temperature

Total Output Error versus Ambient Temperature

Magnetic Offset Error versus Ambient Temperature

Data Taken using the ACS770LCB-100B

Accuracy Data

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Mean

Mean + 3 sigma Mean – 3 sigma

-2

-4

-6

–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

13.60

13.55

13.50

13.45

13.40

13.35

13.30

13.25

13.20

13.15

13.10

VOE (mV)

ELIN (%)

Sens (mV/A)

ETOT (%)

(°C)T

(°C)

450

400

350

300

250

200

150

100

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

IERROM (mA)

(°C)

Electrical Offset Voltage versus Ambient Temperature

Nonlinearity versus Ambient Temperature

Sensitivity versus Ambient Temperature

Total Output Error versus Ambient Temperature

Magnetic Offset Error versus Ambient Temperature

Data Taken using the ACS770KCB-150B

Accuracy Data

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Mean

Mean + 3 sigma Mean – 3 sigma

-2

-4

-6

–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

10.15

10.10

10.05

10.00

9.95

9.90

9.85

9.80

VOE (mV)

ELIN (%)

Sens (mV/A)

ETOT (%)

(°C)T

(°C)

600

500

400

300

200

100

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

IERROM (mA)

(°C)

Electrical Offset Voltage versus Ambient Temperature

Nonlinearity versus Ambient Temperature

Sensitivity versus Ambient Temperature

Total Output Error versus Ambient Temperature

Magnetic Offset Error versus Ambient Temperature

Data Taken using the ACS770ECB-200B

Accuracy Data

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Data Taken using the ACS770LCB-100B

Timing Data

Response Time

IP = 60 A , 10% to 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 0.47 nF

Rise Time

IP = 60 A , 10% to 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 0.47 nF

80% of input 80% of output

tRESPONSE = 4.56 µs

IP = 60 A

VIOUT

10% of output

90% of output

tr = 4.1 µs

IP = 60 A

VIOUT

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Propagation Time

IP = 60 A , 10% to 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 0.47 nF

Power-On Delay

IP = 60 A DC, CBYPASS = Open, CL = 0.47 nF

20% of input 20% of output

tPROP = 2.4 µs

IP = 60 A

VIOUT

90% of output

tPOD = 88 µs

VCC

VCC (min)

VIOUT

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

UVLO Enable Time ( tUVLOE

)

IP = 0 A , CBYPASS = Open, CL = Open, VCC 5 V to 3 V fall time = 1 µs

UVLO Disable Time ( tUVLOD

)

IP = 0 A , CBYPASS = Open, CL = Open, VCC 3 V to 5 V recovery time = 1 µs

90% of output

tUVLOD = 13.9 µs

VCC

VCC (min)

VIOUT

tUVLOE = 75.3 µs

VUVLOL

VIOUT = 0 V

VCC

VIOUT

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Definitions of Accuracy Characteristics

CHARACTERISTIC DEFINITIONS

SENSITIVITY (Sens)

The change in device output in response to a 1 A change through

the primary conductor. The sensitivity is the product of the mag-

netic circuit sensitivity (G / A) and the linear IC amplifier gain

(mV/G). The linear IC amplifier gain is programmed at the factory

to optimize the sensitivity (mV/A) for the half-scale current of the

device.

NOISE (VNOISE)

The noise floor is derived from the thermal and shot noise

observed in Hall elements. Dividing the noise (mV) by the sensi-

tivity (mV/A) provides the smallest current that the device is able

to resolve.

NONLINEARITY (ELIN)

The ACS770 is designed to provide a linear output in response

to a ramping current. Consider two current levels: I1 and I2. Ide-

ally, the sensitivity of a device is the same for both currents, for

a given supply voltage and temperature. Nonlinearity is present

when there is a difference between the sensitivities measured at

I1 and I2. Nonlinearity is calculated separately for the positive

(ELINpos ) and negative (ELINneg ) applied currents as follows:

ELINpos = 100 (%) × {1 – (SensIPOS2 / SensIPOS1

) }

ELINneg = 100 (%) × {1 – (SensINEG2 / SensINEG1

)}

where:

SensIx = (VIOUT(Ix) – VIOUT(Q))/ Ix

and IPOSx and INEGx are positive and negative currents.

Then:

ELIN = max( ELINpos , ELINneg )

RATIOMETRY

The device features a ratiometric output. This means that the

quiescent voltage output, VIOUTQ, and the magnetic sensitivity,

Sens, are proportional to the supply voltage, VCC.The ratiometric

change (%) in the quiescent voltage output is defined as:

5 V

IOUTQ(VCC)

IOUTQ(5V)

∆V

IOUTQ(∆V)

=× 100 (%)

and the ratiometric change (%) in sensitivity is defined as:

5 V

=× 100 (%)

∆Sens(∆V)

Sens(VCC)Sens(5V)

QUIESCENT OUTPUT VOLTAGE (VIOUT(Q))

The output of the device when the primary current is zero. For

bidirectional current flow, it nominally remains at VCC ⁄ 2. Thus,

VCC = 5 V translates into VIOUT(QBI) = 2.5 V. For unidirectional

devices, when VCC = 5 V, VIOUT(QUNI) = 0.5 V. Variation in

VIOUT(Q) can be attributed to the resolution of the Allegro linear

IC quiescent voltage trim, magnetic hysteresis, and thermal drift.

ELECTRICAL OFFSET VOLTAGE (VOE)

The deviation of the device output from its ideal quiescent value

of VCC ⁄ 2 for bidirectional sensor ICs and 0.5 V for unidirectional

sensor ICs, due to nonmagnetic causes.

MAGNETIC OFFSET ERROR (IERROM)

The magnetic offset is due to the residual magnetism (remnant

field) of the core material. The magnetic offset error is highest

when the magnetic circuit has been saturated, usually when the

device has been subjected to a full-scale or high-current overload

condition. The magnetic offset is largely dependent on the mate-

rial used as a flux concentrator.

TOTAL OUTPUT ERROR (ETOT)

The maximum deviation of the actual output from its ideal value,

also referred to as accuracy, illustrated graphically in the output

voltage versus current chart on the following page.

ETOT is divided into four areas:

• 0 A at 25°C. Accuracy at the zero current flow at 25°C,

without the effects of temperature.

• 0 A over Δ temperature. Accuracy at the zero current flow

including temperature effects.

• Full-scale current at 25°C. Accuracy at the full-scale current at

25°C, without the effects of temperature.

• Full-scale current over Δ temperature. Accuracy at the full-

scale current flow including temperature effects.

=× 100 (%)

ETOT(IP)

VIOUT(IP) – VIOUT_IDEAL(IP)

SensIDEAL × IP

where

VIOUT_IDEAL(IP) = VIOUT(Q) + (SensIDEAL × IP )

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Output Voltage versus Sampled Current

Total Output Error at 0 A and at Full-Scale Current

Increasing VIOUT

(V)

+IP (A)

Accuracy

25°C Only

Accuracy

25°C Only

Accuracy

25°C Only

Accuracy

0 A

v rO e ∆Temp erature

Average

VIOUT

–IP (A)

v rO e ∆Temp erature

Decreasing VIOUT

(V)

IP(min)

IP(max)

Half Scale

Definitions of Dynamic Response Characteristics

POWER-ON DELAY (tPOD)

When the supply is ramped to its operating voltage, the device

requires a finite time to power its internal components before

responding to an input magnetic field.

Power-On Delay, tPOD , is defined as the time it takes for the out-

put voltage to settle within ±10% of its steady-state value under

an applied magnetic field, after the power supply has reached its

minimum specified operating voltage, VCC(min), as shown in the

chart at right.

TEMPERATURE COMPENSATION POWER-ON TIME

(tTC )

After Power-On Delay, tPOD , elapses, tTC also is required before a

valid temperature compensated output.

RISE TIME (tr)

The time interval between a) when the device reaches 10% of

its full-scale value, and b) when it reaches 90% of its full-scale

value. Both tr and tRESPONSE are detrimentally affected by eddy

current losses observed in the conductive IC ground plane.

RESPONSE TIME (tRESPONSE)

The time interval between a) when the applied current reaches

80% of its final value, and b) when the sensor reaches 80% of its

output corresponding to the applied current.

PROPAGATION DELAY (tPROP)

The time interval between a) when the input current reaches 20%

of its final value, and b) when the output reaches 20% of its final

value.

POWER-ON RESET VOLTAGE (VPOR )

At power-up, to initialize to a known state and avoid current

spikes, the ACS770 is held in Reset state. The Reset signal is

disabled when VCC reaches VUVLOH and time tPORR has elapsed,

allowing output voltage to go from a high-impedance state

into normal operation. During power-down, the Reset signal is

enabled when VCC reaches VPORL , causing output voltage to go

into a high-impedance state. (Note that a detailed description

of POR and UVLO operation can be found in the Functional

Description section.)

Applied Magnetic Field

Transducer Output

(%)

Propagation Delay, tPROP

Rise Time, tr

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

POWER-ON RESET RELEASE TIME (tPORR)

When VCC rises to VPORH , the Power-On Reset Counter starts.

The ACS770 output voltage will transition from a high-imped-

ance state to normal operation only when the Power-On Reset

Counter has reached tPORR and VCC has exceeded VUVLOH .

UNDERVOLTAGE LOCKOUT THRESHOLD (VUVLO )

If VCC drops below VUVLOL , output voltage will be locked to

GND. If VCC starts rising, the ACS770 will come out of the

locked state when VCC reaches VUVLOH .

SYMMETRY (ESYM)

The degree to which the absolute voltage output from the IC

varies in proportion to either a positive or negative half-scale pri-

mary current. The following equation is used to derive symmetry:

100

V–V

IOUT_+half-scale amperes IOUT(Q)

VIOUT(Q) IOUT_–half-scale amperes

–V

()

UVLO ENABLE/DISABLE RELEASE TIME (tUVLO )

When a falling VCC reaches VUVLOL , time tUVLOE is required

to engage Undervoltage Lockout state. When VCC rises above

VUVLOH , time tUVLOD is required to disable UVLO and have a

valid output voltage.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

FUNCTIONAL DESCRIPTION

The descriptions in this section assume:

Temperature = 25°C,

VCC = 5 V,

no output load, and

no significant current flow through the sensor IC.

Voltage levels shown are specific to a bidirectional ACS770;

however, the POR and UVLO functionality described also applies

to unidirectional sensors.

The reference numbers section refer to figures 1 and 2.

Power-Up

At power-up, as VCC ramps up, the output is in a high-impedance

state. When VCC crosses VPORH (location [1] in figure 1 and [ 1′ ]

in figure 2), the POR Release counter starts counting for tPORR

At this point, if VCC exceeds VUVLOH [ 2′ ], the output will go to

VCC / 2 after tUVLOD [ 3′ ] . If VCC does not exceed VUVLOH [2],

the output will stay in the high-impedance state until VCC reaches

VUVLOH [3] and then will go to VCC / 2 after tUVLOD [ 4 ].

VCC drops below VCC(min) = 4.5 V

If VCC drops below VUVLOL [ 4′, 5 ] , the UVLO Enable Counter

starts counting. If VCC is still below VUVLOL when the counter

reaches tUVLOE

, the UVLO function will be enabled and the

ouput will be pulled near GND [ 6 ] . If VCC exceeds VUVLOL

before the UVLO Enable Counter reaches tUVLOE [ 5′ ] , the output

will continue to be VCC / 2.

Coming Out of UVLO

While UVLO is enabled [ 6 ] , if VCC exceeds VUVLOH [ 7 ] ,

UVLO will be disabled after tUVLOD , and the output will be

VCC / 2 [ 8 ] .

Power-Down

As VCC ramps down below VUVLOL [ 6′, 9 ] , the UVLO Enable

Counter will start counting. If VCC is higher than VPORL when

the counter reaches tUVLOE , the UVLO function will be enabled

and the output will be pulled near GND [ 10 ] . The output will

enter a high-impedance state as VCC goes below VPORL [ 11 ] . If

VCC falls below VPORL before the UVLO Enable Counter reaches

tUVLOE , the output will transition directly into a high-impedance

state [ 7′ ].

Power-On Reset (POR) and Undervoltage

Lock-Out (UVLO) Operation

EEPROM Error Checking And Correction

Hamming code methodology is implemented for EEPROM

checking and correction. The device has ECC enabled after

power-up. If an uncorrectable error has occurred, the VOUT pin

will go to high impedance and the device will not respond to

applied magnetic field.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

tUVLOE

tPORR

tUVLOD

UVLOE

1’ 2’ 4’ 5’ 6’ 7’

3’

5.0

VUVLOH

VPORH

VPORL

VPORH

VPORL

VUVLOL

2.5

High Impedance High Impedance

Slope =

VCC /

Slope =

VCC /

GND Time

Time

GND

VCC

VOUT

5.0

2.5

GND

VOUT

356711

Slope =

VCC /

tUVLOE

Figure 1: POR and UVLO Operation: Slow Rise Time Case

Figure 2: POR and UVLO Operation: Fast Rise Time Case

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Chopper Stabilization Technique

Amp

Regulator

Clock/Logic

Hall Element

Tuned

Filter

Anti-Aliasing

LP Filter

Figure 3: Concept of Chopper Stabilization Technique

When using Hall-effect technology, a limiting factor for

switchpoint accuracy is the small signal voltage developed across

the Hall element. This voltage is disproportionally small relative

to the offset that can be produced at the output of the Hall sensor

IC. This makes it difficult to process the signal while maintaining

an accurate, reliable output over the specified operating tempera-

ture and voltage ranges.

Chopper stabilization is a unique approach used to minimize

Hall offset on the chip. Allegro employs a technique to remove

key sources of the output drift induced by thermal and mechani-

cal stresses. This offset reduction technique is based on a signal

modulation-demodulation process. The undesired offset signal is

separated from the magnetic field-induced signal in the frequency

domain, through modulation. The subsequent demodulation acts

as a modulation process for the offset, causing the magnetic field-

induced signal to recover its original spectrum at baseband, while

the DC offset becomes a high-frequency signal. The magnetic-

sourced signal then can pass through a low-pass filter, while the

modulated DC offset is suppressed.

In addition to the removal of the thermal and stress related offset,

this novel technique also reduces the amount of thermal noise

in the Hall sensor IC while completely removing the modulated

residue resulting from the chopper operation. The chopper sta-

bilization technique uses a high-frequency sampling clock. For

demodulation process, a sample-and-hold technique is used. This

high-frequency operation allows a greater sampling rate, which

results in higher accuracy and faster signal-processing capability.

This approach desensitizes the chip to the effects of thermal and

mechanical stresses, and produces devices that have extremely

stable quiescent Hall output voltages and precise recoverabil-

ity after temperature cycling. This technique is made possible

through the use of a BiCMOS process, which allows the use of

low-offset, low-noise amplifiers in combination with high-density

logic integration and sample-and-hold circuits.

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Figure 4: Package CB, 5-Pin, Leadform PFF

Creepage distance, current terminals to signal pins: 7.25 mm

Clearance distance, current terminals to signal pins: 7.25 mm

Package mass: 4.63 g typical

For Reference Only – Not for Tooling Use

(Reference DWG-9111 & DWG-9110)

Dimensions in millimeters –NOT TO SCALE

Dimensions exclusive of mold ﬂash, gate burs, and dambar protrusions

Exact case and lead conﬁguration at supplier discretion within limits shown

R 1.0

1.91

21.4

0.5

R 3.0

Ø0.8

Ø1.5

Ø0.5

R 2.05

1º±2°

5º±5°

17.5 ±0.2

2.9 ±0.2

3.5 ±0.2

1.50 ±0.10

Branded

Face

0.381 +0.060

–0.030

NNNNNNN

TTT-AAA

LLLLLLL

YYWW

Dambar removal intrusion

Perimeter through-holes recommended

PCB Layout Reference View

= Device part number

=Temperature code

=Amperage range

= Lot number

= Last two digits of year of

manufacture

= Week of manufacture

= Supplier emblem

Standard Branding Reference View

Branding scale and appearance at supplier discretion

14.0 ±0.2

4.0 ±0.2

3.0 ±0.2

10.00 ±0.10

0.51 ±0.10

7.00 ±0.10

1.9 ±0.2

13.00 ±0.10

4.40 ±0.10

PACKAGE OUTLINE DRAWINGS

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

For Reference Only – Not for Tooling Use

(Reference DWG-9111, DWG-9110)

Dimensions in millimeters – NOT TO SCALE

Dimensions exclusive of mold ﬂash, gate burs, and dambar protrusions

Exact case and lead conﬁguration at supplier discretion within limits shown

A2.75 ±0.10

1.50 ±0.10

14.0 ±0.2

4.0 ±0.2

3.0 ±0.2

10.00 ±0.10

7.00 ±0.10

13.00 ±0.10

4.40 ±0.10

23.50 ±0.5

Branded

Face

NNNNNNN

TTT-AAA

LLLLLLL

YYWW

Dambar removal intrusion

= Device part number

=Temperature code

=Amperage range

= Lot number

= Last two digits of year of

manufacture

= Week of manufacture

= Supplier emblem

Standard Branding Reference View

231

0.51 ±0.10

1.9 ±0.2

5º±5°

2.9 ±0.2

3.5 ±0.2

0.381 +0.060

–0.030

1.91

∅0.8

∅1.5

BPCB Layout Reference View

Perimeter through-holes recommended

Branding scale and appearance at supplier discretion

Figure 5: Package CB, 5-Pin, Leadform PSF

Creepage distance, current terminals to signal pins: 7.25 mm

Clearance distance, current terminals to signal pins: 7.25 mm

Package mass: 4.63 g typical

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Figure 6: Package CB, 5-Pin, Leadform PSS

For Reference Only–Not for Tooling Use

(Reference DWG-9111, DWG-9110)

Dimensions in millimeters – NOT TO SCALE

Dimensions exclusive of mold ﬂash, gate burs, and dambar protrusions

Exact case and lead conﬁguration at supplier discretion within limits shown

2 31

A2.75 ±0.10

3.18 ±0.10

1.50 ±0.10

14.0 ±0.2

4.0 ±0.2

3.0 ±0.2

10.00 ±0.10

0.51 ±0.10

7.00 ±0.10

1.9 ±0.2

13.00 ±0.10

4.40 ±0.10

11.0 ±0.05

23.50 ±0.5

0.381+0.060

–0.030

Branded

Face

NNNNNNN

TTT-AAA

LLLLLLL

YYWW

Dambar removal intrusion

= Device part number

= Temperature code

= Amperage range

= Lot number

= Last two digits of year of

manufacture

= Week of manufacture

= Supplier emblem

Standard Branding Reference View

1.91

∅0.8

∅1.5

BPCB Layout Reference View

Perimeter through-holes recommended

Branding scale and appearance at supplier discretion

Creepage distance, current terminals to signal pins: 7.25 mm

Clearance distance, current terminals to signal pins: 7.25 mm

Package mass: 4.63 g typical

Thermally Enhanced, Fully Integrated, Hall-Effect-Based

High-Precision Linear Current Sensor IC with 100 µΩ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

For the latest version of this document, visit our website:

www.allegromicro.com

Revision History

Number Date Description

1 December 8, 2014 Revised Selection Guide

2 January 20, 2015 Revised VPORH Typical Value

3 March 11, 2015 Revised VRCC, VRIOUT, IOUT(Source), IERROM (100 A and 150 A) values, and added Symmetry to

X150B PERFORMANCE CHARACTERISTICS table

4 April 8, 2015 Updated TUV certification

5 November 2, 2016 Updated PCB Layout Reference View in Package Outline Drawing on page 27

6 June 5, 2017 Updated status of ACS770LCB-100U-PSF-T part variant to Last-Time Buy

7 November 16, 2017 Added PSS leadform

8 January 30, 2018 Added Dielectric Surge Strength Test Voltage characteristic (page 3) and EEPROM Error Checking

and Correction section (page 24)

9 April 18, 2018 Corrected TUV certification

10 November 6, 2018 Added UL certificate number and minor editorial updates

Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to

permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that

the information being relied upon is current.

Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of

Allegro’s product can reasonably be expected to cause bodily harm.

The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its

use; nor for any infringement of patents or other rights of third parties which may result from its use.

Copies of this document are considered uncontrolled documents.