2SA1407 / 2SC3601 Ordering number : EN1766D SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1407 / 2SC3601 Ultrahigh-Definition CRT Display Video Output Applications Applications * * * * Ultrahigh-definition CRT display. Video output. Color TV chroma output. Wide-band amp. Features * * * * * High fT : fT typ=400MHz. High breakdown voltage : VCEO200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process. Specifications ( ) : 2SA1407 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit (--)200 Collector-to-Emitter Voltage VCBO VCEO (--)200 V Emitter-to-Base Voltage VEBO (--)4 V Collector Current Collector Current (Pulse) IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C V (--)150 mA (--)300 mA 1.2 W 7 W 150 C --55 to +150 C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70208AA TI IM TC-00001493 / 71598HA(KT)/90495MO(KOTO)/3277KI/D105MW/2225MW, TS 8-7231 No.1766-1/5 2SA1407 / 2SC3601 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=(--)150V, IE=0A VEB=(--)2V, IC=0A hFE1 hFE2 VCE=(--)10V, IC=(--)10mA VCE=(--)10V, IC=(--)100mA fT VCE(sat) VBE(sat) VCE=(--)30V, IC=(--)50mA IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)10A, IE=0A IC=(--)1mA, RBE= Emitter-to-Base Breakdown Voltage V(BR)EBO Cob IE=(--)100A, IC=0A VCB=(--)30V, f=1MHz Cre VCB=(--)30V, f=1MHz Output Capacitance Reverce Transfer Capacitance Ratings Conditions * : The 2SA1407/2SC3601 are classified by 10mA hFE as follows : Rank C D E hFE 40 to 80 60 to 120 100 to 200 min typ Unit max 40* (--)0.1 A (--)1.0 A 320* 20 400 MHz (--0.8)0.6 V (--)1.0 V (--)200 V (--)200 V (--)4 V (3.0)2.5 pF (2.5)2.0 pF F 160 to 320 Package Dimensions unit : mm (typ) 7515-002 8.0 3.0 2.7 11.0 1.5 7.0 4.0 3.0 1.6 0.8 0.8 0.5 15.5 0.6 2 1 : Emitter 2 : Collector 3 : Base 3 1.2 1 2.4 4.8 IC -- VCE 2SA1407 --250A --40 --200A --30 --150A --20 --100A --10 0 --50A 0 --2 IC -- VCE 50 --300A IB=0A --4 --6 --8 --10 --12 --14 --16 --18 --20 Collector-to-Emitter Voltage, VCE -- V ITR03495 Collector Current, IC -- mA --50 Collector Current, IC -- mA SANYO : TO-126 2SC3601 500A 450A 400A 40 350A 300A 30 250A 200A 20 150A 100A 10 50A 0 IB=0A 0 2 4 6 8 10 12 14 16 18 20 Collector-to-Emitter Voltage, VCE -- V ITR03496 No.1766-2/5 2SA1407 / 2SC3601 IC -- VBE --160 --120 --100 --80 --60 --40 --20 0 DC Current Gain, hFE DC Current Gain, hFE 40 0 0.2 0.4 0.6 0.8 1.0 7 5 3 2 1.2 ITR03498 hFE -- IC 2SC3601 VCE=10V 2 100 7 5 3 2 10 7 7 3 5 3 2 5 7 --100 --10 Collector Current, IC -- mA 7 3 2 5 5 3 2 100 7 5 7 2 3 5 7 --100 --10 Collector Current, IC -- mA 2 7 5 Cob Cre 2 1.0 7 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 --100 ITR03503 5 7 2 100 3 5 ITR03500 2SC3601 VCE=30V 5 3 2 100 7 3 5 7 2 10 3 5 7 2 100 Collector Current, IC -- mA 3 ITR03502 Cob, Cre -- VCB 2 Output Capacitance, Cob -- pF Reverce Transfer Capacitance, Cre -- pF 10 3 7 5 3 2SA1407 f=1MHz 3 2 10 f T -- IC ITR03501 Cob, Cre -- VCB 2 7 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 5 3 5 1000 2SA1407 VCE= --30V 7 3 ITR03499 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 60 3 2SA1407 VCE= --10V 10 Output Capacitance, Cob -- pF Reverce Transfer Capacitance, Cre -- pF 80 Base-to-Emitter Voltage, VBE -- V hFE -- IC 100 5 100 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03497 0 2 5 120 20 3 5 2SC3601 VCE=10V 140 Collector Current, IC -- mA Collector Current, IC -- mA --140 IC -- VBE 160 2SA1407 VCE= --10V 2SC3601 f=1MHz 10 7 5 Cob 3 2 Cre 1.0 7 5 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 7 100 ITR03504 No.1766-3/5 2SA1407 / 2SC3601 VCE(sat) -- IC 2SA1407 IC / IB=10 1.0 7 5 3 2 0.1 7 3 5 7 5 2 3 7 --100 --10 Collector Current, IC -- mA 2 7 5 3 2 0.1 5 3 3 5 3 5 7 2 100 3 ITR03506 PC -- Ta 1.2 ms s IC=150mA 2 10 1.4 1m 10 2 7 Collector Current, IC -- mA ITR03505 2SA1407 / 2SC3601 ICP=300mA 3 Collector Current, IC -- mA 1.0 ASO 5 100 7 5 3 2 10 1.0 No 0.8 he at sin k 0.6 0.4 0.2 7 5 2SC3601 IC / IB=10 7 Collector Dissipation, PC -- W 5 VCE(sat) -- IC 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 For PNP, minus sign is omitted. 3 5 7 2 10 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V ITR03507 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR03508 PC -- Tc 8 Collector Dissipation, PC -- W 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 ITR03509 No.1766-4/5 2SA1407 / 2SC3601 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No.1766-5/5