MITSUBISHI IGBT MODULES CM100TL-12NF HIGH POWER SWITCHING USE CM100TL-12NF IC ................................................................... 100A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm L A B E L 11 120 106 0.5 7 40.78 17 2-5.5 MOUNTING HOLES 17 12 13.62 UP VP 1 1 CN 55 35 WP N 12 23 12 23 32 12 23 23.2 12 22 11.75 (13.5) 12 12 (SCREWING DEPTH) +1 W 10.75 (19.75) 22 -0.5 B V 16 8 U 3 1 6-M5 NUTS 1 P A B Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P B CN-7 CN-8 N NC NC NC UP-1 UP-2 VP-1 VP-2 CN-5 CN-6 WP-1 WP-2 W V U CN-3 CN-4 CN-1 CN-2 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM100TL-12NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC = 99C*1 Pulse Ratings 600 20 100 200 100 200 540 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 (Note 2) Pulse TC = 25C (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Unit V V A A A A W C C Vrms N*m N*m g ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V 6 7 8 V IGES Gate leakage current VGE = VGES, VCE = 0V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.3 -- 1.7 1.7 -- -- -- 400 -- -- -- -- -- 2.1 -- -- -- 0.085 -- 0.5 2.2 -- 15 1.9 0.6 -- 120 100 300 300 120 -- 2.8 0.23 0.41 A VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance Tj = 25C Tj = 125C IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 100A, VGE = 15V VCC = 300V, IC = 100A VGE = 15V RG = 6.3, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 External gate resistance -- 63 mA V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100TL-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 12 150 100 11 50 10 8 0 2 4 6 9 8 4 VGE = 15V 3 2 1 Tj = 25C Tj = 125C 0 10 0 50 100 150 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 103 Tj = 25C 7 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25C 15 13 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V 8 6 4 IC = 100A IC = 200A 2 5 3 2 102 7 5 3 2 Tj = 25C Tj = 125C IC = 30A 0 6 8 10 12 14 16 18 101 20 3 4 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 3 2 Cies 7 5 3 2 Coes 7 5 3 2 2 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 7 5 100 1 EMITTER-COLLECTOR VOLTAGE VEC (V) 102 101 0 GATE-EMITTER VOLTAGE VGE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 td(off) 102 7 5 3 2 td(on) tr Conditions: VCC = 300V VGE = 15V RG = 6.3 Tj = 125C Inductive load 101 7 5 3 2 100 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) tf 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM100TL-12NF TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 7 5 3 2 102 trr Irr 7 5 3 2 101 1 10 2 5 7 102 3 Conditions: VCC = 300V VGE = 15V RG = 6.3 Tj = 25C Inductive load 2 3 5 7 103 2 10-1 10-1 7 5 3 2 7 5 3 2 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.23K/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.41K/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 101 102 Conditions: VCC = 300V 5 VGE = 15V 3 RG = 6.3 Tj = 125C 2 Inductive load C snubber at bus 100 7 Esw(off) 7 5 Esw(on) 3 Conditions: VCC = 300V 5 VGE = 15V 3 IC = 100A Tj = 125C 2 Inductive load C snubber at bus 101 7 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25C 3 Under the chip 2 7 5 Esw(off) 3 2 Esw(on) 2 3 5 7 101 2 3 5 100 0 10 7 102 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 100 100 7 7 5 3 Err 2 10-1 7 Conditions: VCC = 300V VGE = 15V 3 RG = 6.3 Tj = 125C 2 Inductive load C snubber at bus 5 10-2 0 10 2 COLLECTOR CURRENT IC (A) RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) 10-1 0 10 2 3 5 7 101 2 3 5 3 2 10-1 7 5 3 2 10-2 0 10 5 7 102 EMITTER CURRENT IE (A) Err Conditions: VCC = 300V VGE = 15V IE = 100A Tj = 125C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () Feb. 2009 4 MITSUBISHI IGBT MODULES CM100TL-12NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 100A VCC = 200V 16 VCC = 300V 12 8 4 0 0 100 200 300 400 500 600 GATE CHARGE QG (nC) Feb. 2009 5