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Phase Control Thyristors VRRM = 800-1600 V
IT(RMS) = 50 A
IT(AV)M = 32 A
VRSM VRRM Type
VDSM VDRM
VV
900 800 CS 23-08io2
1300 1200 CS 23-12io2
1700 1600 CS 23-16io2
Symbol Test Conditions Maximum Ratings
IT(RMS) TVJ = TVJM 50 A
IT(AV)M Tcase = 85°C; 180° sine 25 A
Tcase = 69°C; 180° sine 32 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 450 A
VR = 0 t = 8.3 ms (60 Hz), sine 480 A
TVJ = TVJM t = 10 ms (50 Hz), sine 400 A
VR = 0 t = 8.3 ms (60 Hz), sine 430 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 1010 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 970 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 770 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 75 A 150 A/ms
f = 50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.3 A non repetitive, IT = IT(AV)M 500 A/ms
diG/dt = 0.3 A/ms
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 ms10W
IT = IT(AV)M tP = 300 ms5W
PG(AV) 0.5 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
MdMounting torque 2.7-3.3 Nm
24-29 lb.in.
Weight 12 g
Features
●Thyristor for line frequencies
●International standard package
JEDEC TO-208AA
●Planar glassivated chip
●Long-term stability of blocking
currents and voltages
Applications
●Motor control
●Power converter
●AC power controller
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
CS 23
740
12
3
TO-208AA
(TO-48)
1 = Anode, 2 = Cathode, 3 = Gate
2
3
1M6
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© 2000 IXYS All rights reserved 2 - 3
Symbol Test Conditions Characteristic Values
IR, IDTVJ = TVJM; VR = VRRM; VD = VDRM £3mA
VTIT= 80 A; TVJ = 25°C£1.8 V
VT0 For power-loss calculations only (TVJ = 125°C) 1.0 V
rT10 mW
VGT VD = 6 V; TVJ = 25°C£2.5 V
TVJ = -40°C£3.5 V
IGT VD = 6 V; TVJ = 25°C£50 mA
TVJ = -40°C£80 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM £0.2 V
IGD £1mA
ILTVJ = 25°C; tP = 10 ms£200 mA
IG = 0.15 A; diG/dt = 0.15 A/ms
IHTVJ = 25°C; VD = 6 V; RGK = ¥ £ 100 mA
tgd TVJ = 25°C; VD = 1/2 VDRM £2ms
IG = 0.15 A; diG/dt = 0.15 A/ms
tqTVJ = TVJM; IT = 25 A, tP = 300 ms; di/dt = -20 A/ms typ. 60 ms
VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM
RthJC DC current 1.0 K/W
RthJH DC current 1.61 K/W
dSCreepage distance on surface 1.5 mm
dAStrike distance through air 1.5 mm
aMax. acceleration, 50 Hz 50 m/s2
Accessories:
Nut M6 DIN 439/SW14
Lock washer A6 DIN 128
CS 23
Fig. 2 Gate controlled delay time tgd Fig. 3 On-state characteristicsFig. 1 Gate voltage and gate current
Triggering:
A = no; B = possible; C = safe
0.0 0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
100
120
10-2 10-1 100101
10-1
100
101
102
0 25 50 75 100
0
1
2
3
4
IT
tgd
VG
V
IGtVT
A
m
s
mA AV
lim.
typ.
typ. lim.
TVJ= 125°C
TVJ= 25°C
IGD: TVJ= 25°C
IGD: TVJ=125°C
A
IGT: TVJ= 25°C
IGT: TVJ= 0°C
B
B
B
C
IGT: TVJ= -40°C
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© 2000 IXYS All rights reserved 3 - 3
0 50 100 150
0
10
20
30
40
23456789110
200
400
600
800
100
1000
10-3 10-2 10-1 100101
0
100
200
300
400
500
0 102030405060
0
20
40
60
80
50 100 150
0
10-3 10-2 10-1 100101102103104
0
1
2
IT(AV)M
I2t
ITSM
A
ttTc
PT
W
IT(AV)M
ATamb
ts
ZthJH
K/W
A
A2s
s
°C
ms °C
CS 23
Fig. 8 Transient thermal impedance junction to heatsink
Fig. 4 Surge overload current
ITSM: crest value, t: duration Fig. 5 I2t versus time (1-10 ms) Fig. 6 Maximum forward current at
case temperature 180° sine
RthJH for various conduction angles d:
dR
thJH (K/W)
DC 1.61
180°1.85
120°2.03
60°2.35
30°2.60
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.224 0.003
2 0.132 0.028
3 0.321 0.216
4 0.522 1.1
5 0.249 4.2
6 0.162 43.2
Fig. 7 Power dissipation versus on-state current and ambient temperature
50Hz, 80%VRRM
TVJ = 45°C
TVJ = 125°C
VR = 0 V
TVJ = 45°C
TVJ = 125°C
DC
180° sin
120°
60°
30°
RthJA :
1.9 K/W
2.3 K/W
2.7 K/W
2.7 K/W
4.3 K/W
6.1 K/W
d = DC
d = 180°
d = 120°
d = 30°
d = 60°
ase
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