Semiconductor Group 1
PNP Silicon Switching Transistors BSS 80
BSS 82
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BSS 80 B
BSS 80 C
BSS 82 B
BSS 82 C
Q62702-S557
Q62702-S492
Q62702-S560
Q62702-S482
CHs
CJs
CLs
CMs
SOT-23
123
B E C
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Parameter Symbol BSS 80 Unit
Collector-emitter voltage VCE0 40 V
Collector-base voltage VCB0
Emitter-base voltage VEB0
Collector current ICmA
Base current IBmA
Total power dissipation, TS=77˚C Ptot mW
Junction temperature Tj˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient2) Rth JA ≤ 290 K/W
Peak collector current ICM A
Peak base current IBM
BSS 82
60
800
100
330
150
1
200
Values
60
Junction - soldering point Rth JS ≤ 220
5
●High DC current gain
●Low collector-emitter saturation voltage
●Complementary types: BSS 79, BSS 81 (NPN)
5.91
Semiconductor Group 2
BSS 80
BSS 82
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Base-emitter saturation voltage1)
I
C = 150 mA, IB = 15 mA
I
C = 500 mA, IB = 50 mA
Collector-emitter saturation voltage1)
I
C = 150 mA, IB = 15 mA
I
C = 500 mA, IB = 50 mA
DC current gain
I
C = 100 µA, VCE = 10 V BSS 80 B/82 B
BSS 80 C/82 C
I
C = 1 mA, VCE = 10 V BSS 80 B/82 B
BSS 80 C/82 C
I
C = 10 mA, VCE = 10 V1) BSS 80 B/82 B
BSS 80 C/82 C
I
C = 150 mA, VCE = 10 V1) BSS 80 B/82 B
BSS 80 C/82 C
I
C = 500 mA, VCE = 10 V1) BSS 80 B/82 B
BSS 80 C/82 C
VCollector-emitter breakdown voltage
I
C = 10 mA BSS 80
BSS 82
V(BR)CE0 40
60 –
––
–
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 10 µAV(BR)CB0 60 – –
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 5––
nAEmitter-base cutoff current
VEB = 3 V IEB0 ––10
nA
µA
Collector-base cutoff current
VCB = 50 V
VCB = 50 V, TA = 150 ˚C
ICB0 –
––
–10
10
–hFE 40
75
40
100
40
100
40
100
40
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
120
300
–
–VVCEsat –
––
–0.4
1.6
VBEsat –
––
–1.3
2.6
1) Pulse test conditions: t≤300 µs, D = 2 %.
Semiconductor Group 3
BSS 80
BSS 82
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Test circuits
Delay and rise time Storage and fall time
MHzTransition frequency
I
C = 20 mA, VCE = 20 V, f = 100 MHz fT– 250 –
AC characteristics
pFOpen-circuit output capacitance
VCB = 10 V, f = 1 MHz Cobo –6–
UnitValuesParameter Symbol
min. typ. max.
ns
ns
ns
ns
VCC = 30 V, IC = 150 mA, IB1 = 150 mA
Delay time
Rise time
VCC = 6 V, IC = 150 mA, IB1 = IB2 = 15 mA
Storage time
Fall time
td
tr
tstg
tf
–
–
–
–
–
–
–
–
10
40
80
30
Semiconductor Group 4
BSS 80
BSS 82
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector-base capacitance Ccb =f(VCB)
f = 1 MHz
Transition frequency fT=f(IC)
VCE = 20 V
Semiconductor Group 5
BSS 80
BSS 82
Saturation voltage IC = f (VBE sat, VCE sat)
hFE =10
Storage time tstg = f (IC)
Delay time td = f (IC)
Rise time tr = f(IC)
Fall time tf = f(IC)
Semiconductor Group 6
BSS 80
BSS 82
DC current gain hFE =f(IC)
VCE =10V
