FLLI7IME L-Band Medium & High Power GaAs FETs aUTIN FEATURES * High Output Power: Py qp_=32.5dBm (Typ.) * High Gain: Gy gp=12.5cB (Typ.) * High PAE: naqgg=46% (Typ.) * Proven Reliability * Hermetically Sealed Package DESCRIPTION The FLL171ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Fujitsus stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Symbol Condition Rating Unit Drain-Source Voltage VDs 15 Vv Gate-Source Voltage Vas 5 Vv Total Power Dissipation Pt Te = 25C 7.5 WwW Storage Temperature Tstg -65 to +175 C Channel Temperature | Tch 175 C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (Vps) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 2.0 and -1.0 mA respectively with gate resistance of 20022. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C Item Unit Saturated Drain Current Ipss_ | Vps = 5V, Vas = 0V mA Transconductance gm Vps = 5V, Ips = 400mA - 300 - ms Pinch-off Voltage Vp Vos = 5V, Ips =30mA -1.0 | -2.0 | -3.5 Gate Source Breakdown Voltage Vaso IGS = -30uA -5 - - Vv Output Power at 1dB G.C.P. PidB 315 | 325 - dBm Vpbs = 10V Power Gain at 1dB G.C.P. Gigp | [DS ~9-6IDss (Typ.), 1.51125] - dB f = 2.3GHz Power-added Efficiency add - 46 - % Thermal Resistance Rth Channel to Case - 15 20 C/W CASE STYLE: ME G.C.P.: Gain Compression Point Data Sheets 168 1998 Microwave Databook me aU TRU POWER DERATING CURVE FLLI7IME L-Band Medium & High Power GaAs FETs DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 10 x \ Total Power Dissipation (W B o N\ \ 0 50 100 Output Power (dBm) 150 Case Temperature (C) Vas =-0V = 600 GS E -0.5V oO E 400-4 -1.0V i OQ 200 -1.5V -2.0V 200 0 2 4 6 8 10 Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER 33 31 29 27 25 23 Vps=10V Ips ~0.6IDss f = 2.3 GHz 12 14 16 18 20 22 Input Power (dBm) 50 40 30 20 10 Nadd (%) 1998 Microwave Databook 169 Data Sheets FLLI7IME CO L-Band Medium & High Power GaAs FETs 7 UTS O Sy, +90 o So, -O-- Soo -- Sy 0.5 GHz D3 s 420 8 {6 fa fe By ory 0 4 I v 1 46 G SCALE FOR |S. f 5 ISo1| OSS xj oc P ~9.08 Ww < 0.08] on 0.1 -90 S-PARAMETERS Vps = 10V, IDs = 360mA FREQUENCY $11 $21 $12 $22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG 100 .982 -37.4 14.143 157.3 014 65.7 171 -46.2 500 844 -112.0 8.154 114.0 .033 32.4 227 -116.1 1000 .861 -151.1 4.713 82.4 .038 15.8 283 -139.7 1500 .863 -169.2 3.265 62.2 .040 10.4 330 -149.0 2000 .859 178.7 2.511 45.7 .040 8.7 378 -156.1 2500 .855 169.5 2.075 31.1 .041 8.5 427 -162.4 3000 847 161.2 1.794 17.1 044 9.8 475 -169.2 3500 .832 152.9 1.608 3.2 .047 9.7 519 -176.3 4000 811 144.6 1.495 -10.4 .053 7.5 561 -176.9 4500 781 135.7 1.440 -24.5 .059 2.7 601 170.2 5000 132 125.1 1.436 -39.7 .067 4.41 639 164.1 Data Sheets 170 1998 Microwave Databook FLLI7IME L-Band Medium & High Power GaAs FETs fo) aU TRU Case Style "ME" Metal-Ceramic Hermetic Package a0 pe io? as ae: 26 as. 2-92.240.15 (0.087) Ns ~ ls oO] |e He 6S A {| 3 2 | [0.10.05 Hy P0004) 1.020.15 ts a8 ie > ses) 16.020.15 ail& , (0.630) Cr 3 TW | 12.0+0.15 (0.472) 1: Gate 2: Source (Flange) 3: Drain Unit: mm (Inches) 12 (0.048 r Data Sheets 1998 Microwave Databook 171