2N5298
Features
With TO-220 package
Designed for use in general purpose amplifier and switching
applications
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
VCBOCollector to base voltage 80 V
VCEOCollector to emitter voltage 60 V
VEBOEmitter to base voltage 5.0 V
ICPPeak collector current 5.0 A
ICCollector current 4.0 A
PCCollector power dissipation 36 W
TjJunction temperature -65~150
TstgStorage temperature -65~150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
ICBOCollector-base cut-off current VCB = 80V; IE=0 0.2 mA
IEBOEmitter-base cut-off current VEB = 5V; IC=0 1.0 mA
ICEOCollector-emitter cut-off current VCE=60V,IB=0 0.3 mA
VCBOCollector-base breakdown voltage
V(BR)CEOCollector-emitter breakdown voltage IC=30mA,IB=0 60 V
VEBOEmitter-base breakdown voltage
VCEsat-1Collector-emitter saturation voltages IC = 3A; IB = 375mA 1.2 V
VCEsat-2Collector-emitter saturation voltages
VCEsat-3Collector-emitter saturation voltages
VCEsat-4Collector-emitter saturation voltages
hFE-1Forward current transfer ratio IC=1A,VCE=4V 25
hFE-2Forward current transfer ratio IC=3A,VCE=4V 10 50
hFE-3Forward current transfer ratio
hFE-4Forward current transfer ratio
VBE(sat)1Base-emitter saturation voltages IC=3A,VCE=4V 1.8 V
VBE(sat)2Base-emitter saturation voltages
VBE(sat)3Base-emitter saturation voltages
fTTransition frequency at f = 1MHz IC=0.5A,VCE=10V 3.0
tfFall time
tsTum-off storage time
Electrical Characteristics Tc=25
Silicon NPN Transistors
TO-220
INCHANGE
Power Transistors
