IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25C to 150C 600 V VCGR T J = 25C to 150C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 35 A IC110 TC = 110C 20 A 11 A 60 A ICM = 32 @ 0.8 VCES A 10 s 190 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 2 g 300 C 260 C IF(110) ICM TC = 25C, 1 ms SSOA (RBSOA) VGE = 15 V, TJ = 125C, RG = 82 Clamped inductive load tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125C RG = 82 , non repetitive PC TC = 25C TJ Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. BVCES IC = 250 A, VGE = 0 V 600 VGE(th) IC = 750 A, VCE = VGE 3.5 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = 16A, VGE = 15 V TJ = 125 C TO-220 (IXSP) C (TAB) G C E TO-220 (IXSA) G G = Gate E = Emitter C C (TAB) C = Collector TAB = Collector Features * International standard packages * Guaranteed Short Circuit SOA capability * Low VCE(sat) - for low on-state conduction losses * High current handling capability * MOS Gate turn-on - drive simplicity * Fast fall time for switching speeds up to 20 kHz V 6.5 V 85 0.6 A mA 100 nA 2.5 V Applications * AC motor speed control * Uninterruptible power supplies (UPS) * Welding Advantages * High power density DS99181B(12/05) (c) 2004 IXYS All rights reserved IXSA 20N60B2D1 IXSP 20N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs IC = 16A; VCE = 10 V, Note 1 3.5 7.0 S 800 pF 76 90 pF pF C res 28 pF Qg 33 nC 12 nC 12 nC Cies Coes Qge VCE = 25 V, VGE = 0 V f = 1 MHz 20N60B2D1 IC = 16A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25C 30 ns tri IC = 16A, VGE = 15 V VCE = 0.8 VCES, RG = 10 Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 30 ns 116 ns td(off) tfi Eoff 126 380 td(on) tri Inductive load, TJ = 125C Eon IC = 16 A, VGE = 15 V 20N60B2 VCE = 0.8 VCES, RG = 10 20N60B2D1 Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG td(off) tfi Eoff J 30 ns 30 ns 0.12 0.42 mJ mJ 180 ns 210 ns 970 J RthJC Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 (IXSA) Outline 0.66 K/W 0.3 RthCS Reverse Diode (FRED) Symbol ns 600 TO-220 AB (IXSP) Outline Test Conditions K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VF IF = 10A, VGE = 0 V TJ =150C IRM trr IF = 12A, VGE = 0 V, -diF/dt = 100 A/s VR = 100 V trr IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 100C TJ = 100C 1.66 2.66 1.5 90 V V A ns 30 ns 2.5 K/W RthJC Note 1: Pulse test, t 300 s, duty cycle d 2 % IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXSA 20N60B2D1 IXSP 20N60B2D1 Fig. 1. Output Characteristics @ 25 C Fig. 2. Extended Output Characteristics @ 25 C 70 32 VGE = 17V 28 VGE = 17V 60 15V 15V 50 I C - Amperes I C - Amperes 24 13V 20 16 11V 12 8 9V 4 7V 0 0.5 1 1.5 2 2.5 3 40 13V 30 20 11V 10 9V 0 3.5 4 0 V C E - Volts Fig. 3. Output Characteristics @ 125 C 6 8 10 12 V C E - Volts 14 16 18 20 1.8 VGE = 17V 28 1.7 15V VGE = 15V 1.6 VC E (sat)- Normalized 24 13V 20 16 11V 12 9V 8 1.5 I C = 32A 1.4 1.3 1.2 I C = 16A 1.1 1.0 0.9 0.8 4 0.7 7V I C = 8A 0.6 0 0.5 1 1.5 2 2.5 3 V CE - Volts 3.5 4 -50 4.5 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 8 60 TJ = 25C 6 I C = 32A 5 16A 8A 50 I C - Amperes 7 VC E - Volts 4 Fig. 4. Dependence of V CE(sat) on Tem perature 32 I C - Amperes 2 4 3 40 30 20 TJ = 125C 10 2 25C -40C 0 1 9 10 11 12 13 14 15 16 V G E - Volts 17 18 19 20 6 7 8 9 10 11 12 V G E - Volts 13 14 15 16 IXSA 20N60B2D1 IXSP 20N60B2D1 Fig. 8. Dependence of Turn-off Fig. 7. Transconductance Energy Loss on RG 9 2.6 2.4 8 2.2 6 E o f f - miiilJoules g f s - Siemens 7 TJ = -40C 5 25C 125C 4 3 I C = 32A 2.0 TJ = 125C 1.8 1.6 VGE = 15V 1.4 VCE = 400V I C = 16A 1.2 1.0 0.8 2 I C = 8A 0.6 1 0.4 0 0.2 0 10 20 30 40 50 60 10 20 30 40 I C - Amperes Fig. 9. Dependence of Turn-Off 70 80 90 100 2.2 2.2 2.0 R G = 10 2.0 R G = 10 1.8 VGE = 15V 1.8 VGE = 15V 1.6 VCE = 400V 1.6 VCE = 400V E o f f - milliJoules E o f f - miiilJoules 60 Fig. 10. Dependence of Turn-off Energy Loss on Tem perature Energy Loss on IC TJ = 125C 1.4 1.2 1.0 0.8 0.6 I C = 32A 1.4 1.2 I C = 16A 1.0 0.8 0.6 TJ = 25C 0.4 I C = 8A 0.4 0.2 0.2 0.0 0.0 8 12 16 20 24 28 25 32 35 45 I C - Amperes VGE = 15V VCE = 400V 250 I C = 32A 200 I C = 16A I C = 8A 150 100 Switching Time - nanoseconds 240 TJ = 125C 300 85 95 105 115 125 Sw itching Tim e on IC tfi - - - - - 350 75 260 td(off) 400 65 Fig. 12. Dependence of Turn-off Sw itching Tim e on RG 450 55 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Switching Time - nanoseconds 50 R G - Ohms td(off) 220 tfi - - - - - 200 TJ = 125C 180 R G = 10 VGE = 15V 160 VCE = 400V 140 120 TJ = 25C 100 80 60 10 20 30 40 50 60 R G - Ohms 70 80 90 100 8 12 16 20 I C - Amperes 24 28 32 IXSA 20N60B2D1 IXSP 20N60B2D1 Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 16 280 td(off) 260 tfi - - - - - 240 R G = 10 220 VGE = 15V 200 VCE = 400V I C = 32A I C = 16A I C = 8A 140 120 I G = 10mA 10 8 6 4 I C = 32A 100 I C = 16A 12 180 160 VCE = 480V 14 VG E - Volts Switching Time - nanoseconds 300 2 80 0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 0 10 15 20 25 30 35 Q G - nanoCoulombs Fig. 16. Reverse-Bias Safe Operating Area Fig. 15. Capacitance 1,000 33 f = 1 MHz 30 C ies 27 24 100 I C - Amperes Capacitance - p F 5 C oes 21 18 15 12 TJ = 125C 9 R G = 10 6 C res dV/dT < 10V/ns 3 10 0 0 5 10 15 20 25 V C E - Volts 30 35 40 100 200 300 400 500 600 V C E - Volts Fig. 17. Maxim um Transient Therm al Resistance R ( t h ) J C - C / W 1.00 0.50 0.10 1 10 Pulse Width - milliseconds 100 1,000 IXSA 20N60B2D1 IXSP 20N60B2D1 30 250 A nC 25 IF = 5 A 150 TVJ = 100C 15 IF = 10 A 8 IRM Qr 20 IF = 5 A A VR = 300 V 200 TVJ = 150C IF 10 TVJ = 100C IF = 20 A 6 IF = 10 A IF = 20 A 100 4 TVJ = 100C 10 50 5 0 TVJ = 25C 0 1 2 3 2 0 100 V Fig. 19. Reverse recovery charge Qr 2.0 ns 400 600 A/s 800 1000 -diF/dt 0.3 TVJ = 100C V s IF = 10 A VFR 40 IF = 5 A 80 tfr 0.2 IF = 10 A 1.0 IF = 20 A IRM 60 20 tfr VFR 0.5 Qr 0.0 200 Fig. 20. Peak reverse current IRM VR = 300 V trr Kf 0 60 TVJ = 100C 100 1.5 0 A/s 1000 -diF/dt VF Fig. 18. Forward current IF versus VF VR = 300 V 0 40 0.1 40 80 120 C 160 0 200 400 600 TVJ 800 1000 A/s 0 0 200 400 -diF/dt Fig. 21. Dynamic parameters Qr, IRM Fig. 22. Recovery time trr versus -diF/dt 10 0.0 600 A/s 800 1000 diF/dt Fig. 23. Peak forward voltage VFR and Constants for ZthJC calculation: K/W i 1 1 2 ZthJC Rthi (K/W) ti (s) 1.449 0.5578 0.0052 0.0003 0.1 0.01 0.001 0.00001 DSEP 8-06B 0.0001 0.001 0.01 0.1 s t 1 Fig. 24. Transient thermal resistance junction-to-case NOTE: Fig. 18 to Fig. 23 shows typical values IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2