DS99181B(12/05)
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
IXSA 20N60B2D1
IXSP 20N60B2D1
High Speed IGBT
Short Circuit SOA Capability
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC= 25°C35A
IC110 TC= 110°C20A
IF(110) 11 A
ICM TC= 25°C, 1 ms 60 A
SSOA VGE = 15 V, TJ = 125°C, RG = 82Ω ICM = 32 A
(RBSOA) Clamped inductive load @ 0.8 VCES
tSC VGE = 15 V, VCE = 360 V, TJ = 125°C 10μs
(SCSOA) RG = 82 Ω, non repetitive
PCTC= 25°C 190 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Weight 2 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s 260 °C
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 μA, VGE = 0 V 600 V
VGE(th) IC= 750 μA, VCE = VGE 3.5 6.5 V
ICES VCE = VCES 85 μA
VGE = 0 V TJ = 125 °C 0.6 mA
IGES VCE = 0 V, VGE = ± 20 V ± 100 nA
VCE(sat) IC= 16A, VGE = 15 V 2.5 V
Preliminary Data Sheet
VCES = 600 V
IC25 = 35 A
VCE(sat) = 2.5 V
G = Gate C = Collector
E = Emitter TAB = Collector
GCE
TO-220 (IXSP)
C (TAB)
© 2004 IXYS All rights reserved
C (TAB)
GC
TO-220 (IXSA)
IXSA 20N60B2D1
IXSP 20N60B2D1
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VF IF = 10A, VGE = 0 V TJ =150°C 1.66 V
2.66 V
IRM IF = 12A, VGE = 0 V, -diF/dt = 100 A/μs TJ = 100°C 1.5 A
trr VR = 100 V TJ = 100°C90 ns
trr IF = 1 A; -di/dt = 100 A/μs; VR = 30 V 30 ns
RthJC 2.5 K/W
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = 16A; VCE = 10 V, Note 1 3.5 7.0 S
Cies 800 pF
Coes VCE = 25 V, VGE = 0 V 76 pF
f = 1 MHz 20N60B2D1 90 pF
Cres 28 pF
Qg33 nC
Qge IC = 16A, VGE = 15 V, VCE = 0.5 VCES 12 nC
Qgc 12 nC
td(on) 30 ns
tri 30 ns
td(off) 116 ns
tfi 126 ns
Eoff 380 600 μJ
td(on) 30 ns
tri 30 ns
Eon 20N60B2 0.12 mJ
20N60B2D1 0.42 mJ
td(off) 180 ns
tfi 210 ns
Eoff 970 μJ
RthJC 0.66 K/W
RthCS 0.3 K/W
Inductive load, TJ = 25°°
°°
°C
IC = 16A, VGE = 15 V
VCE = 0.8 VCES, RG = 10 Ω
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°°
°°
°C
IC = 16 A, VGE = 15 V
VCE = 0.8 VCES, RG = 10 Ω
Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG
TO-220 AB (IXSP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263 (IXSA) Outline
IXSA 20N60B2D1
IXSP 20N60B2D1
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
0 2 4 6 8 101214161820
VC E - Volts
I C - Amperes
VGE = 17V
9V
11V
13V
15V
Fig. 3. Output Characteristics
@ 125
º
C
0
4
8
12
16
20
24
28
32
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
I C - Amperes
VGE = 17V
15V
7V
13V
9V
11V
Fig. 1 . Output Characteristics
@ 25
º
C
0
4
8
12
16
20
24
28
32
0.5 1 1.5 2 2.5 3 3.5 4
VC E - Volts
I C - Amperes
VGE = 17V
15V
13V
7V
9V
11V
Fig. 4. Dependence of VCE(sat) on
Te mpe r atur e
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-50 -25 0 25 50 75 100 125 150
TJ
- Degrees Centigrade
VC E (sat)- Normalize
d
IC = 16A
IC = 8A
VGE = 15V
IC = 32A
Fig. 5 . Collector-to-Emitter Voltage
vs. Ga te-to-Emitter voltage
1
2
3
4
5
6
7
8
9 1011121314 151617 181920
VG E - Volts
VC E
- Volts
TJ = 25
º
C
IC = 32A
16A
8A
Fig. 6 . Input Admittance
0
10
20
30
40
50
60
6 7 8 9 10 11 12 13 14 15 16
VG E - Volts
I C - Amperes
TJ = 125
º
C
25
º
C
-40
º
C
IXSA 20N60B2D1
IXSP 20N60B2D1
Fig. 7. Transc on ductance
0
1
2
3
4
5
6
7
8
9
0 102030405060
I
C
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
E
o f f
- miiilJoules
I
C
= 8A
T
J
= 125ºC
V
GE
= 15V
V
CE
= 400V
I
C
= 16A
I
C
= 32A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
8 121620242832
I
C
- Amperes
E
o f f
- miiilJoules
R
G
= 10Ω
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- milliJoules
I
C
= 32A
R
G
= 10Ω
V
GE
= 15V
V
CE
= 400V
I
C
= 16A
I
C
= 8A
Fig. 11. Dependence of Turn-off
Switching Time on R
G
100
150
200
250
300
350
400
450
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
S
w
it
c
hi
ng
Ti
me - nanosecon
d
s
I
C
= 8A
t
d(off)
t
fi
- - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 400V
I
C
= 16A
I
C
= 32A
Fig. 12. Dependence of Turn-o ff
Switching Time
on I
C
60
80
100
120
140
160
180
200
220
240
260
8 121620242832
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 10Ω
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
IXSA 20N60B2D1
IXSP 20N60B2D1
Fig. 14. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 480V
I
C
= 16A
I
G
= 10mA
Fig. 15 . Capacitance
10
100
1,000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13 . Dependence of Turn-off
Switching Time on Temperature
80
100
120
140
160
180
200
220
240
260
280
300
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
I
C
= 32A
t
d(off)
t
fi
- - - - -
R
G
= 10Ω
V
GE
= 15V
V
CE
= 400V
I
C
= 16A
I
C
= 8A
I
C
= 32A
Fig. 16. Reverse-Bias Safe
Op erating Area
0
3
6
9
12
15
18
21
24
27
30
33
100 200 300 400 500 600
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10Ω
dV/dT < 10V/ns
Fig. 17. Maximum Transient Thermal Resistance
0.10
1.00
1 10 100 1,000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
0.50
IXSA 20N60B2D1
IXSP 20N60B2D1
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,381,025 6,162,665 6,306,728 B1 6,534,343 6,683,344
one or moreof the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,486,715 6,259,123 B1 6,404,065 B1 6,583,505 6,710,405B2
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 20. Peak reverse current IRM
Fig. 19. Reverse recovery charge Qr
Fig. 18. Forward current IF versus VF
Fig. 21. Dynamic parameters Qr, IRM Fig. 22. Recovery time trr versus -diF/dt Fig. 23. Peak forward voltage VFR and
Fig. 24. Transient thermal resistance junction-to-case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 1.449 0.0052
2 0.5578 0.0003
NOTE: Fig. 18 to Fig. 23 shows typical values
200 600 10000 400 800
40
60
80
100
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
20
40
60
0.0
0.1
0.2
0.3
VFR
diF/dt
V
200 600 10000400800
0
2
4
6
8
10
100 1000
0
50
100
150
200
250
0123
0
5
10
15
20
25
30
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
nC
A/μsA/μs
trr
ns
tfr
ZthJC
A/μs
μs
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
IRM
Qr
VFR
TVJ = 100°C
VR = 300 V
TVJ = 100°C
VR = 300 V
TVJ = 100°C
VR = 300 V
DSEP 8-06B
tfr
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
TVJ = 100°C
IF = 10 A
