© 2013 IXYS CORPORATION, All Rights Reserved
IXYK120N120C3
IXYX120N120C3
VCES = 1200V
IC110 = 120A
VCE(sat)
3.20V
tfi(typ) = 96ns
DS100451B(9/13)
High-Speed IGBTs
for 20-50 kHz Switching
Features
Optimized for Low Switching Losses
Square RBSOA
International Standard Packages
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250A, VGE = 0V 1200 V
VGE(th) IC= 500A, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 25 A
TJ = 150C 1.5 mA
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC= IC110, VGE = 15V, Note 1 2.55 3.20 V
TJ = 150C 3.40 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 175°C 1200 V
VCGR TJ= 25°C to 175°C, RGE = 1M 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (Chip Capability) 240 A
ILRMS Terminal Current Limit 160 A
IC110 TC= 110°C 120 A
ICM TC= 25°C, 1ms 700 A
IATC= 25°C 60 A
EAS TC= 25°C 2 J
SSOA VGE = 15V, TVJ = 150°C, RG = 1 ICM = 240 A
(RBSOA) Clamped Inductive Load VCE VCES
PCTC= 25°C 1500 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g
1200V XPTTM IGBTs
GenX3TM
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXYK)
E
G
C
PLUS247 (IXYX)
G
Tab
Tab
E
C
G
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK120N120C3
IXYX120N120C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 40 68 S
Cies 9850 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 580 pF
Cres 218 pF
Qg(on) 412 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 73 nC
Qgc 180 nC
td(on) 35 ns
tri 77 ns
Eon 6.75 mJ
td(off) 176 ns
tfi 96 ns
Eoff 5.10 mJ
td(on) 33 ns
tri 72 ns
Eon 10.30 mJ
td(off) 226 ns
tfi 120 ns
Eoff 7.20 mJ
RthJC 0.10 °C/W
RthCS 0.15 °C/W
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 0.5 • VCES, RG = 1
Note 2
Inductive load, TJ = 150°C
IC = 100A, VGE = 15V
VCE = 0.5 • VCES, RG = 1
Note 2
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2013 IXYS CORPORATION, All Rights Reserved
IXYK120N120C3
IXYX120N120C3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
240
00.5 11.52 2.533.544.5 5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
11V
10V
7V
8V
6V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
02468101214161820
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
12V
11V
8V
9V
6V
7V
10V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
40
80
120
160
200
240
01234567
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
11V
10V
8V
7V
6V
9V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 120A
I
C
= 60A
I
C
= 240A
Fig. 5. Collector-to-Emitter Voltag e vs.
Gate-to-Emitter Voltage
1
2
3
4
5
6
7
8
6789101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 240A
T
J
= 25ºC
120A
60A
Fig. 6. In put Adm ittance
0
40
80
120
160
200
240
280
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 150ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK120N120C3
IXYX120N120C3
Fig. 11. Ma ximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 11. Ma ximum Transient Thermal Impedance
aaaaa
0.2
Fig. 7. Transconductance
0
20
40
60
80
100
120
140
0 50 100 150 200 250 300
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
240
280
100 300 500 700 900 1100 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 1
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 120A
I
G
= 10mA
Fig. 9. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Cies
Coes
Cres
© 2013 IXYS CORPORATION, All Rights Reserved
IXYK120N120C3
IXYX120N120C3
Fig. 12. Inductive Switching Energy Loss v s .
Gate Resistance
2
3
4
5
6
7
8
9
10
12345678910
R
G
- Ohms
E
off
- MilliJoules
2
4
6
8
10
12
14
16
18
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
80
100
120
140
160
180
200
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
700
800
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Curre nt
1
2
3
4
5
6
7
8
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1
2
3
4
5
6
7
8
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
160
180
200
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
140
160
180
200
220
240
260
280
300
320
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
70
80
90
100
110
120
130
140
150
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
140
160
180
200
220
240
260
280
300
320
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK120N120C3
IXYX120N120C3
IXYS REF: IXY_120N120C3(9P-C91) 9-09-13
Fig. 19. Inductive Turn-on Switching Times vs.
Colle ct or Cu rrent
20
30
40
50
60
70
80
90
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanoseconds
30
31
32
33
34
35
36
37
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
28
30
32
34
36
38
40
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
12345678910
R
G
- Ohms
t
r i
- Nanoseconds
20
28
36
44
52
60
68
76
84
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 21. Maximum Peak Load Current vs. Frequency
0
10
20
30
40
50
60
70
80
90
100
110
120
10 100 1,000
f
max
- KiloHertzs
I
C
- Amperes
T
J
= 150ºC
T
C
= 75ºC
V
CE
= 600V
V
GE
= 15V
R
G
= 1
D = 0.5
Square Wave
Triangular Wave
