DATA SH EET
Product specification
Supersedes data of 1998 Jul 29 2003 Sep 26
DISCRETE SEMICONDUCTORS
BLF368
VHF push-pull power MOS
transistor
M3D091
2003 Sep 26 2
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
FEATURES
•High power gain
•Easy power control
•Good thermal stability
•Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262A1
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source
PIN CONFIGURATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
n
dbook, halfpage
12
34
MSB008
Top view
55
MBB157
g2
g1
d2
d1
s
QUICK REFERENCE DATA
RF performance at Th=25°C in a push-pull common source test circuit.
Note
1. Assumingathird order amplitude transfercharacteristic,1 dB gain compression correspondswith30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB)
∆Gp
(dB)
(note 1)
ηD
(%)
CW, class-AB 225 32 300 >12 >1>55
typ. 13.5 typ. 0.4 typ. 62
2003 Sep 26 3
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section unless otherwise specified
VDS drain-source voltage −65 V
VGS gate-source voltage −±20 V
IDdrain current (DC) −25 A
Ptot total power dissipation Tmb ≤25 °C total device; both sections equally loaded −500 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-mb thermal resistance from junction to mounting base totaldevice;both sections
equally loaded 0.35 K/W
Rth mb-h thermal resistance from mounting base to
heatsink total device; both sections
equally loaded 0.15 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDSon.
(2) Tmb =25°C.
Total device; both sections equally loaded.
handbook, halfpage
1
10
102
110
V
DS (V)
ID
(A)
102
(1)
MRA933
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0 40 80 160
500
0
400
MGE616
120
300
200
100
Ptot
(W)
Th (°C)
(2)
(1)
2003 Sep 26 4
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETERS CONDITIONS MIN. TYP. MAX. UNIT
Per transistor section
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 100 mA 65 −−V
I
DSS drain-source leakage current VGS = 0; VDS =32V −−5mA
I
GSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA
V
GSth gate-source threshold voltage ID= 100 mA; VDS =10V 2 −4.5 V
∆VGS gate-source voltage difference of
both transistor sections ID= 100 mA; VDS =10V −−100 mV
gfs forward transconductance ID= 8 A; VDS =10V 5 7.5 −S
g
fs1/gfs2 forward transconductance ratio of
both transistor sections ID= 8 A; VDS =10V 0.9 −1.1
RDSon drain-source on-state resistance ID= 8 A; VDS =10V −0.1 0.15 Ω
IDSX on-state drain current VGS = 10 V; VDS =10V −37 −A
Cis input capacitance VGS = 0; VDS = 32 V; f = 1 MHz −495 −pF
Cos output capacitance VGS = 0; VDS = 32 V; f = 1 MHz −340 −pF
Crs feedback capacitance VGS = 0; VDS = 32 V; f = 1 MHz −40 −pF
Cd-f drain-flange capacitance −5.4 −pF
VGS group indicator
GROUP LIMITS
(V) GROUP LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
2003 Sep 26 5
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
Fig.4 Temperature coefficient of gate-source
voltageasafunctionofdraincurrent;typical
values per section.
VDS =10V.
handbook, halfpage
0
−5
MGP229
10−1110
−4
−3
−2
−1
I
D
(A)
T.C.
(mV/K)
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
VDS = 10 V; Tj=25°C.
handbook, halfpage
0 5 10 20
60
20
0
40
MGP230
15
ID
(A)
VGS (V)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
VGS = 10 V; ID=8A.
handbook, halfpage
0 50 100 150
200
150
100
50
MGP231
Tj (°C)
RDSon
(mΩ)
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
VGS = 0; f = 1 MHz.
handbook, halfpage
01020 40
1500
500
0
1000
MGP234
30
C
(pF)
VDS (V)
Cis
Cos
2003 Sep 26 6
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per
section.
VGS = 0; f = 1 MHz.
handbook, halfpage
01020 40
600
200
0
400
MGP232
30
Crs
(pF)
VDS (V)
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th=25°C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source
class-AB circuit. RGS = 536 Ω per section; optimum load impedance per section = 1.34 +j0.34 Ω; VDS =32V.
Note
1. Assuming a third order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
Ruggedness in class-AB operation
The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the
following conditions: VDS = 32 V; f = 225 MHz at rated output power.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ∆Gp(1)
(dB) ηD
(%)
CW, class-AB 225 32 2 ×250 300 >12 >1>55
typ. 13.5 typ. 0.4 typ. 62
225 28 2 ×250 300 typ. 13 typ. 0.7 typ. 68
225 35 2 ×250 300 typ. 14 typ. 0.2 typ. 60
175 28 2 ×250 300 typ. 15 typ. 0.5 typ. 70
2003 Sep 26 7
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
Fig.9 Power gain as a function of load power;
typical values per section.
Class-AB operation; VDS = 32 V; IDQ =2×250 mA;
ZL= 1.34 +j0.34 Ω(per section); RGS = 536 Ω(per section);
f = 225 MHz.
solid line: Th=25°C. dotted line: Th=70°C.
handbook, halfpage
0 500
20
16
8
4
12
100 200 300 400
MGP239
Gp
(dB)
PL (W)
Fig.10 Efficiency as a function of load power;
typical values per section.
Class-AB operation; VDS = 32 V; IDQ =2×250 mA;
ZL= 1.34 +j0.34 Ω(per section); RGS = 536 Ω(per section);
f = 225 MHz.
solid line: Th=25°C. dotted line: Th=70°C.
handbook, halfpage
0 100 500
80
60
20
0
40
200 300 400
MGP241
ηD
(%)
PL (W)
Fig.11 Load power as a function of input power;
typical values per section.
Class-AB operation; VDS = 32 V; IDQ =2×250 mA;
ZL= 1.34 +j0.34 Ω(per section); RGS = 536 Ω(per section);
f = 225 MHz.
solid line: Th=25°C. dotted line: Th=70°C.
handbook, halfpage
0102030
500
0
400
300
200
100
MGP240
PL
(W)
PIN (W)
2003 Sep 26 8
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
2003 Sep 26 8
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
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handbook, full pagewidth
C19
C14
C10
C11
C31C32
C33
C34
IC1
R3
R2 R7
A
C15
C20
C21
R8
R6
R5
R4
R9
L15
C29 L22
L24
L23
C30
L21
L20L18
L19
L12
C4 C5
L7
L8
L9
L6L4
L5
L2
L1
L3
50 Ω
input
D.U.T.
C13
C12
C18
C16
L13
L10 L16
L17
C25
C17
VDD1
C9
C8
C6
R1
C23C22 C24 C27 C28 50 Ω
output
MGP211
C2
C1
C3
C26
C7
L11
L14
A
VDD1
VDD2
Fig.12 Test circuit for class-AB operation.
f = 225 MHz.
2003 Sep 26 9
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
List of components class-AB test circuit (see Figs 12 and 13)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 multilayer ceramic chip capacitor;
note 1 2×56 pF in
parallel +18 pF,
500 V
C3 film dielectric trimmer 2 to 9 pF 2222 809 09005
C4 multilayer ceramic chip capacitor;
note 1 47 pF, 500 V
C5 film dielectric trimmer 5 to 60 pF 2222 809 08003
C6, C7, C9, C10,
C12, C15, C31, C34 multilayer ceramic chip capacitor;
note 1 1 nF, 500 V 2222 852 47104
C8, C11, C16, C21,
C32 multilayer ceramic chip capacitor;
note 1 100 nF, 50 V
C17, C20, C33 electrolytic capacitor 10 µF, 63 V
C22 multilayer ceramic chip capacitor;
note 1 82 pF, 500 V
C23 multilayer ceramic chip capacitor;
note 1 10 pF +30 pF in
parallel, 500 V
C24, C28 film dielectric trimmer 2 to 18 pF 2222 809 09006
C25, C26 multilayer ceramic chip capacitor;
note 1 39 pF +47 pF in
parallel, 500 V
C27 multilayer ceramic chip capacitor;
note 1 18 pF, 500 V
C29, C30 multilayer ceramic chip capacitor;
note 1 3×100 pF in
parallel, 500 V
L1, L3, L22, L24 stripline; note 2 50 Ω4.8 ×80 mm
L2, L23 semi-rigid cable; note 3 50 Ωext. conductor
length 80 mm
ext. dia 3.6 mm
L4, L5 stripline; note 2 43 Ω6×32.5 mm
L6, L7 stripline; note 2 43 Ω6×10.5 mm
L8, L9 stripline; note 2 43 Ω6×3mm
L10, L11 stripline; note 2 43 Ω6×10.5 mm
L12, L15 grade 3B Ferroxcube wideband
HF choke 2 in parallel 4312 020 36642
L13, L14 2 turns enamelled 1.6 mm copper
wire 25 nH space 2.5 mm
int. dia. 5 mm
leads 2 ×7mm
L16, L17 stripline; notes 2 and 4 43 Ω6×3mm
L18, L19 stripline; notes 2 and 4 43 Ω6×35 mm
L20, L21 stripline; notes 2 and 4 43 Ω6×9mm
R1, R6 10 turns potentiometer 50 kΩ
R2, R5 metal film resistor 0.4 W, 1 kΩ
R3, R4 metal film resistor 0.4 W, 536 Ω
2003 Sep 26 10
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 to L11, L16 to L22 and L24 are on a double copper-clad printed circuit board with glass
microfibre PTFE dielectric (εr= 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 ×35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 to L21 to avoid overheating by large
RF currents.
R7, R8 metal film resistor 1 W, ±5%, 10 Ω
R9 metal film resistor 1 W, 3.16 kΩ
IC1 voltage regulator 78L05
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
2003 Sep 26 11
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
Fig.13 Component layout for 225 MHz class-AB test circuit.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Dimensions in mm.
handbook, full pagewidth
130
MGP213
C18
C13 L12
R7
L12
C12 C16
C17
+VDD1
L13
hollow rivet
C25
C23
C24
L18
L19 C27
L20
C28
L21C30
C26
L17
L16
L10
L11
C22
L14
C19
C14 C15 C21
C20
copper strap
L23 L24
hollow rivets
L15
R8
L15
+VDD2
L22
C29
+VDD1 IC1 to R1, R6
C31
C32
C33
C8 R2
slider R1 C9
C6
R3
C5
C1
C3
C2 L5
L4
C4
L6
L7
R4
L8
L9
C7
C10
R5
C11
C34
slider R6
L3
hollow rivets
L2
copper strap
119
100
R9
L1
2003 Sep 26 12
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
Fig.14 Input impedance as a function of frequency
(series components); typical values per
section.
Class-AB operation; VDS = 32 V; IDQ =2×250 mA;
RGS = 536 Ω (per section); PL= 300 W.
handbook, halfpage
150 250
2
1
−1
−2
0
200
MGP242
f (MHz)
Zi
(Ω)
xi
ri
Fig.15 Load impedance as a function of frequency
(series components); typical values per
section.
Class-AB operation; VDS = 32 V; IDQ =2×250 mA;
RGS = 536 Ω (per section); PL= 300 W.
handbook, halfpage
150 250
2
0
MGP243
1
200 f (MHz)
ZL
(Ω)RL
XL
Fig.16 Power gain as a function of frequency;
typical values per section.
Class-AB operation; VDS = 32 V; IDQ =2×250 mA;
RGS = 536 Ω (per section); PL= 300 W.
handbook, halfpage
150 250
20
12
16
4
0
8
200
MGP244
Gp
(dB)
f (MHz)
2003 Sep 26 13
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
BLF368 scattering parameters
VDS = 28 V; ID= 250 mA; note 1
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.86 −159.2 21.94 96.8 0.01 −0.8 0.90 169.1
10 0.86 −168.9 11.14 88.5 0.01 21.1 0.85 174.3
20 0.86 −173.4 5.45 79.2 0.01 18.7 0.83 178.2
30 0.86 −174.2 3.53 72.3 0.02 8.7 0.83 −179.8
40 0.87 −174.4 2.54 66.3 0.02 0.3 0.84 −178.0
50 0.88 −174.5 1.94 61.0 0.02 −6.7 0.85 −176.7
60 0.90 −174.7 1.54 56.1 0.01 −12.5 0.86 −175.9
70 0.91 −174.9 1.25 51.8 0.01 −17.4 0.88 −175.4
80 0.92 −175.2 1.04 47.9 0.01 −21.1 0.89 −175.1
90 0.93 −175.5 0.88 44.4 0.01 −24.1 0.90 −175.0
100 0.93 −175.9 0.75 41.0 0.01 −26.6 0.91 −175.1
125 0.95 −176.7 0.53 34.0 0.01 −29.8 0.93 −175.6
150 0.96 −177.6 0.38 29.3 0.01 −28.2 0.94 −175.7
175 0.97 −178.4 0.30 25.8 0.00 −21.2 0.96 −176.1
200 0.97 −179.1 0.23 22.6 0.00 −6.2 0.97 −176.8
250 0.98 179.5 0.16 18.7 0.00 45.7 0.98 −177.7
300 0.99 178.4 0.11 17.1 0.01 70.9 0.99 −178.6
350 0.99 177.3 0.08 16.6 0.01 76.9 0.99 −179.2
400 0.99 176.4 0.07 18.9 0.01 84.9 0.99 −179.9
450 0.99 175.3 0.05 21.7 0.01 87.8 0.99 179.5
500 0.99 174.4 0.05 27.2 0.01 88.4 1.00 178.9
600 0.99 172.6 0.04 37.8 0.02 89.3 1.00 177.8
700 1.00 170.8 0.03 50.9 0.02 90.0 1.00 176.8
800 1.00 169.0 0.03 62.1 0.03 91.1 1.00 175.8
900 1.00 167.1 0.04 71.3 0.03 91.6 1.00 174.9
1000 1.00 165.1 0.04 76.4 0.04 92.3 1.00 173.8
2003 Sep 26 14
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
BLF368 scattering parameters
VDS = 32 V; ID= 250 mA; note 1
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.86 −157.9 23.11 97.5 0.01 −2.1 0.90 168.6
10 0.86 −168.3 11.76 88.9 0.01 20.9 0.84 174.0
20 0.86 −173.1 5.75 79.4 0.01 18.7 0.82 178.1
30 0.86 −174.0 3.73 72.5 0.02 8.8 0.83 −179.7
40 0.87 −174.3 2.68 66.5 0.02 0.5 0.83 −177.9
50 0.88 −174.5 2.05 61.2 0.02 -6.5 0.84 −176.5
60 0.90 −174.6 1.63 56.4 0.01 −12.3 0.86 −175.7
70 0.91 −174.8 1.33 52.1 0.01 −17.1 0.87 −175.2
80 0.92 −175.2 1.10 48.2 0.01 −20.9 0.88 −174.8
90 0.93 −175.5 0.93 44.7 0.01 −23.9 0.89 −174.7
100 0.93 −175.8 0.80 41.4 0.01 −26.3 0.91 −174.8
125 0.95 −176.6 0.56 34.3 0.01 −29.5 0.92 −175.3
150 0.96 −177.5 0.41 29.5 0.01 −27.8 0.94 −175.5
175 0.97 −178.4 0.31 26.0 0.00 −20.8 0.96 −175.9
200 0.97 −179.1 0.25 22.8 0.00 −5.6 0.97 −176.6
250 0.98 179.6 0.16 18.9 0.00 45.9 0.98 −177.5
300 0.99 178.4 0.12 17.0 0.01 71.1 0.98 −178.4
350 0.99 177.3 0.09 16.9 0.01 77.4 0.99 −179.1
400 0.99 176.4 0.07 18.6 0.01 84.9 0.99 −179.8
450 0.99 175.4 0.06 21.2 0.01 87.9 0.99 179.7
500 0.99 174.4 0.05 24.8 0.01 88.5 1.00 179.0
600 0.99 172.6 0.04 36.3 0.02 89.4 1.00 177.9
700 1.00 170.8 0.03 49.2 0.02 90.1 1.00 176.9
800 1.00 169.0 0.03 61.2 0.03 91.2 1.00 175.9
900 1.00 167.1 0.04 70.4 0.03 91.8 1.00 175.0
1000 1.00 165.1 0.04 75.8 0.04 92.5 1.00 173.9
2003 Sep 26 15
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
BLF368 scattering parameters
VDS = 35 V; ID= 250 mA; note 1
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.86 −156.9 23.97 98.1 0.01 −3.2 0.90 168.3
10 0.86 −167.8 12.21 89.2 0.01 20.7 0.84 173.8
20 0.86 −172.9 5.98 79.6 0.01 18.7 0.82 178.1
30 0.86 −173.9 3.88 72.7 0.01 8.9 0.82 −179.7
40 0.87 −174.2 2.79 66.7 0.02 0.6 0.82 −177.8
50 0.89 −174.4 2.13 61.4 0.02 −6.4 0.84 −176.4
60 0.90 −174.6 1.70 56.5 0.01 −12.2 0.85 −175.5
70 0.91 −174.8 1.38 52.2 0.01 −16.9 0.87 −175.0
80 0.92 −175.2 1.15 48.4 0.01 −20.8 0.88 −174.7
90 0.93 −175.5 0.97 44.9 0.01 −23.7 0.89 −174.5
100 0.93 −175.8 0.83 41.5 0.01 −26.0 0.90 −174.6
125 0.95 −176.6 0.58 34.5 0.01 −29.2 0.92 −175.1
150 0.96 −177.5 0.43 29.6 0.01 −27.6 0.94 −175.3
175 0.97 −178.3 0.33 26.1 0.00 −20.4 0.96 −175.7
200 0.97 −179.0 0.26 22.9 0.00 −5.1 0.96 −176.4
250 0.98 179.6 0.17 19.0 0.00 46.5 0.98 −177.3
300 0.99 178.4 0.12 16.9 0.01 71.2 0.98 −178.3
350 0.99 177.3 0.09 16.5 0.01 77.5 0.99 −179.0
400 0.99 176.4 0.07 18.1 0.01 84.9 0.99 −179.7
450 0.99 175.4 0.06 20.5 0.01 87.9 0.99 179.7
500 0.99 174.4 0.05 25.1 0.01 88.5 1.00 179.1
600 0.99 172.6 0.04 35.9 0.02 89.5 1.00 178.0
700 1.00 170.8 0.03 48.8 0.02 90.1 1.00 176.9
800 1.00 169.0 0.04 59.9 0.03 91.2 1.00 176.0
900 1.00 167.1 0.04 69.8 0.03 91.9 1.00 175.0
1000 1.00 165.1 0.04 75.8 0.04 92.6 1.00 173.9
2003 Sep 26 16
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
99-03-29
IEC JEDEC EIAJ
SOT262A1
0 5 10 mm
scale
Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1
p
AF
b
e
D
q
U1
D1
H1
U2
H
Q
c
5
12
43
E
E
1
C
Aw
1
AB
M M M
B
M
w
3
M M
w
2C
UNIT A
mm
Db
5.85
5.58 0.16
0.10 22.17
21.46 11.05 10.29
10.03 21.08
19.56 9.91
9.65
5.77
5.00
ce U2
0.250.25 0.51
w3
27.94
qw
2
w
1
F
1.78
1.52
U1
34.17
33.90
H1
17.02
16.51
p
3.28
3.02
Q
2.85
2.59
EE
1
D
1
10.27
10.05
inches 0.230
0.220 0.006
0.004 0.873
0.845
21.98
21.71
0.865
0.855 0.435 0.405
0.396 0.830
0.770 0.390
0.380
0.227
0.197 0.0100.010 0.0201.100
0.070
0.060 1.345
1.335
0.670
0.650 0.129
0.119 0.112
0.102
0.404
0.396
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2003 Sep 26 17
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/04/pp18 Date of release: 2003 Sep 26 Document order number: 9397 750 11602
