IXGH48N60C3D1 - IXYS - Pdf.Support

VCES = 600V

IC110 = 48A

VCE(sat) ≤≤

≤≤

≤2.5V

tfi(typ) = 38ns

GenX3TM 600V IGBT

with Diode

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 600 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ 600 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C (Limited by Leads) 75 A

IC110 TC= 110°C 48 A

ID110 TC= 110°C 30 A

ICM TC= 25°C, 1ms 250 A

IATC= 25°C 30 A

EAS TC= 25°C 300 mJ

SSOA VGE = 15V, TVJ = 125°C, RG = 3ΩICM = 100 A

(RBSOA) Clamped Inductive Load @VCE < 600 V

PCTC= 25°C 300 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10 Seconds 260 °C

FCMounting Torque 1.13/10 Nm/lb.in

Weight 6 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V

ICES VCE = VCES 300 μA

VGE = 0V TJ = 125°C 1.75 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 30A, VGE = 15V, Note 1 2.3 2.5 V

TJ = 125°C 1.8 V

High speed PT IGBT for

40-100kHz Switching

TO-247

GC

E ( TAB )

G = Gate C = Collector

E = Emitter TAB = Collector

IXGH48N60C3D1

Features

zOptimized for Low Switching Losses

zSquare RBSOA

zAnti-Parallel Ultra Fast Diode

zFast Switching

zAvalanche Rated

zInternational Standard Package

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zHigh Frequency Power Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH48N60C3D1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC= 30A, VCE = 10V, Note 1 20 30 S

Cies 1960 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 202 pF

Cres 66 pF

Qg77 nC

Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES 16 nC

Qgc 32 nC

td(on) 19 ns

tri 26 ns

Eon 0.41 mJ

td(off) 60 100 ns

tfi 38 ns

Eoff 0.23 0.42 mJ

td(on) 19 ns

tri 26 ns

Eon 0.65 mJ

td(off) 92 ns

tfi 95 ns

Eoff 0.57 mJ

RthJC 0.42 °C/W

RthCS 0.21 °C/W

Inductive Load, TJ = 25°C

IC = 30A, VGE = 15V

VCE = 400V, RG = 3Ω

Inductive Load, TJ = 125°C

IC = 30A, VGE = 15V

VCE = 400V, RG = 3Ω

Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, Unless Otherwise Specified)

Symbol Test Conditions Min. Typ. Max.

VF IF = 30A, VGE = 0V, Note 1 2.7 V

TJ = 150°C 1.6 V

IRM TJ = 100°C 4 A

trr TJ = 100°C 100 ns

25 ns

RthJC 0.9 °C/W

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-247 AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

e

∅ P

IF = 30A, VGE = 0V, -diF/dt = 100A/μs,

VR = 100V

IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V

IXGH48N60C3D1

Fi g . 1. Ou tp u t C h ar acter i sti cs

@ 25ºC

0

5

10

15

20

25

30

35

40

45

50

55

60

0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

30

60

90

120

150

180

210

240

270

300

0 2 4 6 8 101214161820

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

7V

9V

11V

13V

Fig. 3. Output Characteristics

@ 125ºC

0

5

10

15

20

25

30

35

40

45

50

55

60

0 0.4 0.8 1.2 1.6 2 2.4 2.8

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 60A

I

C

= 30A

I

C

= 15A

Fi g . 5. Co l l ect or -to -Emi t ter V ol tag e

vs. Gate-to -Emitter Vo ltag e

2.0

2.5

3.0

3.5

4.0

4.5

5.0

7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 60A

30A

15A

T

J

= 25ºC

Fig. 6. Input Admittance

0

10

20

30

40

50

60

70

80

90

100

5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0

V

GE

- Volts

I

C

-

Amperes

T

J

= -125ºC

25ºC

- 40ºC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH48N60C3D1

Fig. 11. Maximum Transient T hermal Im p edance

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W

IXYS REF: G_48N60C3D1(5D)01-23-09-B

Fig. 7. Tr ansconductance

0

5

10

15

20

25

30

35

40

45

50

0 102030405060708090100110120

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 10. Reverse-Bias Safe Operating Area

0

10

20

30

40

50

60

70

80

90

100

110

200 250 300 350 400 450 500 550 600 650

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 3Ω

dV / dt < 10V / ns

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 1020304050607080

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 300V

I

C

= 30A

I

G

= 10 mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

Fig. 12. Inductive Switching

Energy Loss vs. Gate Resistance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35

RG - Ohms

E

off

- MilliJoules

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 400V

I

C

= 60A

I

C

= 30A

I

C

= 15A

Fig. 17. Induc tiv e Turn-off

Switching Times vs. Junction Te m perature

20

40

60

80

100

120

140

160

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

f

- Nanoseconds

50

60

70

80

90

100

110

120

t

d(off)

- Nanoseconds

t

f

td(off)

- - - -

R

G

= 3Ω

, V

GE

= 15V

V

CE

= 400V

I

C

= 15A

I

C

= 60A

I

C

= 30A

Fig. 15. Inductive Turn-off

Switching Times vs. Gate Resistance

70

75

80

85

90

95

100

105

110

115

120

125

130

0 5 10 15 20 25 30 35

RG - Ohms

t

f

- Nanoseconds

50

75

100

125

150

175

200

225

250

275

300

325

350

t

d(off)

- Nanoseconds

t

f

td(off)

- - - -

T

J

= 125ºC,

V

GE

= 15V

V

CE

= 400V

I

C

= 30A

I

C

= 15A

I

C

= 60A

Fig. 13. Inductive Swiching

Energy Loss vs. Collector Current

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

15 20 25 30 35 40 45 50 55 60

IC - Amperes

E

off

- MilliJoules

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 3

Ω ,

V

GE

= 15V

V

CE

= 400V

T

J

= 125ºC, 25ºC

Fig. 14. Inductive Swiching

Energy Loss vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

E

off

- MilliJoules

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 3Ω

,

V

GE

= 15V

V

CE

= 400V

I

C

= 60A

I

C

= 30A

I

C

= 15A

Fig. 16. Induc tive Turn-off

Switching Times v s . Colle ctor Current

20

30

40

50

60

70

80

90

100

110

120

130

140

15 20 25 30 35 40 45 50 55 60

IC - Amperes

t

f

- Nanoseconds

50

55

60

65

70

75

80

85

90

95

100

105

110

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3Ω

, V

GE

= 15V

V

CE

= 400V

T

J

= 125ºC

T

J

= 25ºC

IXGH48N60C3D1

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH48N60C3D1

Fig. 19 . Inductive Turn-on

S witching Times vs. C ollector Current

0

10

20

30

40

50

60

70

80

90

100

110

15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

t

r

- Nanoseconds

15

16

17

18

19

20

21

22

23

24

25

26

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

R

G

= 3Ω

, V

GE

= 15V

V

CE

= 400V

25ºC < TJ < 125ºC

Fig. 20. Inductiv e Turn-on

Switching Times vs. Junction Temperature

0

10

20

30

40

50

60

70

80

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

17

18

19

20

21

22

23

24

25

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

R

G

= 3Ω

, V

GE

= 15V

V

CE

= 400V

I

C

= 30A

I

C

= 60A

I

C

= 15A

Fig. 18. Inductive Turn-on

Switching Times vs. Gate Resistance

0

20

40

60

80

100

120

140

0 5 10 15 20 25 30 35

R

G

- Ohms

t

r

- Nanoseconds

15

20

25

30

35

40

45

50

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 400V

I

C

= 60A

I

C

= 15A, 30A

IXYS REF: G_48N60C3D1(5D)01-23-09-B

200 600 10000 400 800

60

70

80

90

0.00001 0.0001 0.001 0.01 0.1 1

0.001

0.01

0.1

1

04080120160

0.0

0.5

1.0

1.5

2.0

Kf

TVJ

°C

-diF/dt

t

s

K/W

0 200 400 600 800 1000

0

5

10

15

20

0.00

0.25

0.50

0.75

1.00

VFR

diF/dt

V

200 600 10000 400 800

0

5

10

15

20

25

30

100 1000

0

200

400

600

800

1000

0123

0

10

20

30

40

50

60

IRM

Qr

IF

A

VF-diF/dt -diF/dt

A/μs

A

V

nC

A/μsA/μs

trr

ns tfr

ZthJC

A/μs

μs

DSEP 29-06

IF= 60A

IF= 30A

IF= 15A

TVJ= 100°C

VR = 300V

TVJ= 100°C

IF = 30A

Fig. 23. Peak reverse current IRM

versus -diF/dt

Fig. 22. Reverse recovery charge Qr

versus -diF/dt

Fig. 21. Forward current IF versus VF

TVJ= 100°C

VR = 300V

TVJ= 100°C

VR = 300V

IF= 60A

IF= 30A

IF= 15A

Qr

IRM

Fig. 25. Recovery time trr versus

-diF/dt

Fig. 26. Peak forward voltage VFR

and tfr versus diF/dt

IF= 60A

IF= 30A

IF= 15A

tfr

VFR

Fig. 27. Transient thermal resistance junction to case

Constants for ZthJC calculation:

iR

thi (K/W) ti (s)

1 0.502 0.0052

2 0.193 0.0003

3 0.205 0.0162

TVJ=25°C

TVJ=100°C

TVJ=150°C

Fig. 24. Dynamic parameters Qr, IRM

versus TVJ

IXGH48N60C3D1