MBR 1100
SCHOTTKY DIE SPECIFICATION TYPE: MBR1100
100 V 1 A ( Low Ir) (RSingle □Dual) Anode
SYM Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 107 Volt
Ir=0.5mA (for dice form) IFAV Amp
VF MAX 0.725 Volt
IR MAX 0.010 mA
Cj MAX pF
IFSM Amp
Tj ℃
TSTG ℃
Specification apply to die only. Actual performance may degrade when assembled.
We do not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM µmMil
A1040 40.94
B880 34.64
C203 8.00
254 10.00
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Thickness (Min)
Thickness (Max)
PS:
(1)Cutting street width is around 16µm (0.62mil).
DICE OUTLINE DRAWING
ITEM
Die Size
Top Metal Pad Size
Operating Junction Temperature -50 to +150
Storage Temperatures -50 to +150
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current 52
Maximum Junction Capacitance @ 0V, 1MHZ
Maximum Instantaneous Reverse Voltage
VR= 103 Volt, Ta=25℃0.015
@ 1 Amperes, Ta=25℃0.755
Average Rectified Forward Current 1
Maximum Instantaneous Forward Voltage
General Description:
ELECTRICAL CHARACTERISTICS Spec. Limit
100
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