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Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol MMBTA55 MMBTA56 Unit
Collector–Emitter Voltage VCEO –60 –80 Vdc
Collector–Base Voltage VCBO –60 –80 Vdc
Emitter–Base Voltage VEBO –4.0 Vdc
Collector Current — Continuous IC–500 mAdc
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 556 °C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) MMBTA55
(IC = –1.0 mAdc, IB = 0) MMBTA56 V(BR)CEO –60
–80 —
—Vdc
Emitter–Base Breakdown Voltage (IE = –100
m
Adc, IC = 0) V(BR)EBO –4.0 — Vdc
Collector Cutoff Current (VCE = –60 Vdc, IB = 0) ICES — –0.1 µAdc
Collector Cutoff Current (VCB = –60 Vdc, IE = 0) MMBTA55
Collector Cutoff Current (VCB = –80 Vdc, IE = 0) MMBTA56 ICBO —
—–0.1
–0.1 µAdc
ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc)
DC Current Gain (IC = –100 mAdc, VCE = –1.0 Vdc) hFE 100
100 —
——
Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) VCE(sat) — –0.25 Vdc
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –1.0 Vdc) VBE(on) — –1.2 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
(IC = –100 mAdc, VCE = –1.0 Vdc, f = 100 MHz) fT50 — MHz
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
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Preferred devices are Motorola recommended choices for future use and best overall value.