SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
FEATURES
* 60Volt VDS
*R
DS(ON) = 5Ω
PARTMARKIN G DETAI L – MV
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuo us Drain Cur rent at Tamb=25°C ID0.15 mA
Pulsed Drain Current IDM 3A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BVDSS 60 90 V ID=100µA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 0.8 3 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 10 nA VGS=15V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 0.5 µAVDS=25V, VGS=0V
Static Drain-Source On-State
Resistance (1) RDS(on) 5ΩVGS=10V, ID=200mA
Forward Transconductance
(1)(2) gfs 200 mS VDS=10V, ID=200mA
Input Capacitance (2) Ciss 60 pF VDS=10V, VGS =0V,
f=1MHz
Turn-On Delay Time (2)(3) td(on) 10 ns VDD
≈-15V , ID=600mA
Turn-Off Delay Time (2)(3) td(off) 10 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse ge nerator
Spice parameter data is available upon request for this device
For typical characteristics graphs refer to ZVN3306F datasheet.
BS170F
D
G
S
SOT23
3 - 54
