Stock No. 23033-A Advance Information - Subject to Change Without Notice 1
EM128L08
Advance Information
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM128L08 Family
128Kx8 Bit Ultra-Low Power Asynchronous Static RAM
Overview
The EM128L08 is an integrated memory device
containing a low power 1 Mbit Static Random
Access Memory organized as 131,072 words by 8
bits. The device is fabricated using NanoAmp’s
advanced CMOS process and high-speed/low-
power circuit technology. This device is designed
for very low voltage operation making it quite suit-
able for battery powered devices. It is also
designed for both very low operating and standby-
currents. The device pinout is compatible with
other standard 128Kx8 SRAMs.
Features
Wide Voltage Range:
2.3 to 3.6 Volts
Extended Temperature Range:
-40 to +85 oC
Fast Cycle Time:
TACC < 55 ns @ 3.0V
Very Low Operating Current:
ICC < 10 mA typical at 3V, 10 Mhz
Very Low Standby Current:
ISB < 10 µA @ 55 oC
32-Pin TSOP, STSOP, Packages Available
FIGURE 1: Typical Operating Current Curves
12.5
10.0
7.5
5.0
2.5
0.0
Typical ICC
Operating Frequency (Mhz)
0 2.5 5.0 7.5 10.0 12.5 15.0
3.6 Volts
2.3 Volts
Stock No. 23033-A Advance Information - Subject to Change Without Notice 2
EM128L08
NanoAmp Solutions, Inc. Advance Information
FIGURE 1: Pin Configuration
FIGURE 2: Functional Block Diagram
TABLE 1: Pin Description
TABLE 2: Functional Description
*The device will consume active power in this mode whenever addresses are changed
Pin Name Pin Function Pin Name Pin Function
A0-A16 Address Inputs WE Write Enable (Active Low)
D0-D7 Data Inputs/Outputs VCC Power
CE Chip Enable (Active Low) VSS Ground
OE Output Enable (Active Low) NC Not Connected (Do not connect signal)
CE1 CE2 WE OE D0-D7 MODE POWER
HXXX High Z Standby Standby
XLX X High Z Standby Standby
LHLXData In Write Active -> Standby*
LHHLData Out Read Active -> Standby*
LH H H High Z Active Standby*
EM128L08
STSOP, TSOP
2
3
4
5
1
6
7
8
9
10
11
12
13
14
15
16
23
18
17
22
21
20
19
27
26
25
24
31
30
29
28
32
A11
A9
A8
A13
WE
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4 A2
A10
CE
VSS
A3
A1
A0
D0
D1
D2
D3
D4
D5
D6
D7
OE
CE2
Control
Logic
128K x 8
RAM Array
Address
Decode
Logic
Address
Inputs
A0 - A16
CE
WE
OE
Input/
Output
Mux
and
Buffers
Data I/O
D0 - D7
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EM128L08
NanoAmp Solutions, Inc. Advance Information
TABLE 3: Absolute Maximum Ratings*
* Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 4: Operating Characteristics (Over specified Temperature Range)
Note 1. This device assumes a standby mode if either CE1 is disabled (high) or CE2 is disabled (low). It will also automatically go
into a standby mode whenever all input signals are quiescent (not toggling) regardless of the state of CE1 or CE2. In order
to achieve low standby current in the enabled mode (CE1 low and CE2 high), all inputs must be within 0.2 volts of either
VCC or VSS.
Item Symbol Rating Unit
Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V
Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.0 V
Power Dissipation PD500 mW
Storage Temperature TSTG –40 to 125 oC
Operating Temperature TA-40 to +85 oC
Soldering Temperature and Time TSOLDER 260 oC, 10sec(Lead only) oC
Item Symbol Test Conditions Min Typ Max Unit
Supply Voltage VCC 2.3 3.6 V
Data Retention Voltage VDR Chip Disabled (Note 3) 1.8 3.6 V
Input High Voltage VIH 0.7VCC VCC+0.5 V
Input Low Voltage VIL –0.5 0.3VCC V
Output High Voltage VOH IOH = 0.2mA VCC –0.2 V
Output Low Voltage VOL IOL = -0.2mA 0.2 V
Input Leakage Current ILI VIN = 0 to VCC 0.5 µA
Output Leakage Current ILO OE = VIH or Chip Disabled 0.5 µA
Read/Write Operating Supply Cur-
rent @ 1 µS Cycle Time ICC1 VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOL = 0 3.0 mA
Read/Write Operating Supply Cur-
rent @ 70 nS Cycle Time ICC2 VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOL = 0 14.0 mA
Read/Write Quiescent Operating
Supply Current (Note 1) ICC3
VIN = VCC or 0V
Chip Enabled, IOL = 0 f = 0,
tA= 85oC, VCC = 3.3 V 20 µA
Operating Standby Current
(Note 1) ISB1
VIN = VCC or 0V
Chip Disabled
tA= 55oC, VCC = 3.3V 10 µA
Maximum Standby Current
(Note 1) ISB2
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 3.3V 20 µA
Maximum Data Retention Current
(Note 1) IDR Vcc = 2.0V, VIN = VCC or 0
Chip Disabled, tA= 85oC10 µA
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EM128L08
NanoAmp Solutions, Inc. Advance Information
TABLE 5: Timing Test Conditions
TABLE 6: Timing
Item
Input Pulse Level 0.1VCC to 0.9 VCC
Input Rise and Fall Time 5ns
Input and Output Timing Reference Levels 0.5 VCC
Output Load CL = 30pF
Operating Temperature -40 to +85 oC
Item Symbol 2.3 - 3.6 V 3.0 - 3.6 V Units
Min. Max. Min. Max.
Read Cycle Time tRC 70 55 ns
Address Access Time tAA 70 55 ns
Chip Enable to Valid Output tCO 70 55 ns
Output Enable to Valid Output tOE 25 20 ns
Chip Enable to Low-Z output tLZ 10 10 ns
Output Enable to Low-Z Output tOLZ 5 5 ns
Chip Disable to High-Z Output tHZ 020 015 ns
Output Disable to High-Z Output tOHZ 020 015 ns
Output Hold from Address Change tOH 10 10 ns
Write Cycle Time tWC 70 55 ns
Chip Enable to End of Write tCW 50 45 ns
Address Valid to End of Write tAW 50 45 ns
Write Pulse Width tWP 40 35 ns
Address Setup Time tAS 0 0 ns
Write Recovery Time tWR 0 0 ns
Write to High-Z Output tWHZ 20 15 ns
Data to Write Time Overlap tDW 40 35 ns
Data Hold from Write Time tDH 0 0 ns
End Write to Low-Z Output tOW 5 5 ns
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EM128L08
NanoAmp Solutions, Inc. Advance Information
FIGURE 3: Read Cycle Timing (WE = VIH)
FIGURE 4: Write Cycle Timing (OE clock)
A0-A16
CE1/CE2
OE
D0-D7
tRC
tCE
tOE tOHZ
tHZ
tAA
Data Valid
tLZ
tOH
tOLZ
Enable Valid
A0-A16
OE
CE1/CE2
WE
Data In
Data Out
tWC
tAW
tCW
tWP
tWHZ
tDW tDH
Data
High-Z
tWR
tOHZ tOW
tAS
Enable Valid
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EM128L08
NanoAmp Solutions, Inc. Advance Information
FIGURE 5: Write Cycle Timing (OE fixed)
A0-A16
CE1/CE2
WE
Data In
Data Out
tWP
tDW tDH
Data Valid
High-Z
tWHZ tOW
t
WC
tAW tCW
tWR
tAS tOH
Enable Valid
Stock No. 23033-A Advance Information - Subject to Change Without Notice 7
EM128L08
NanoAmp Solutions, Inc. Advance Information
TABLE 7: Ordering Information
TABLE 8: Revision History
Part Number Package Temperature
Range Voltage
Range Speed
EM128L08T 32 pin TSOP -40 to +85oC2.3 to 3.6 V 55 ns @ 3.0 V
EM128L08N 32 pin STSOP -40 to +85oC2.3 to 3.6 V 55 ns @ 3.0 V
Revision # Date Change Description
AJan. 2001 Initial Advance Release