Freescale Semiconductor Technical Data Document Number: MMG15241H Rev. 1, 4/2011 Enhancement Mode pHEMT Technology (E--pHEMT) MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT -- 89 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 500 to 2800 MHz frequency range. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. 500--2800 MHz, 15.9 dB 24 dBm E--pHEMT Features * Frequency: 500--2800 MHz * Noise Figure: 1.6 dB @ 2140 MHz * P1dB: 24 dBm @ 2140 MHz * Small--Signal Gain: 15.9 dB @ 2140 MHz * Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz * Single 5 Volt Supply * Supply Current: 85 mA * 50 Ohm Operation (some external matching required) * Low Cost SOT--89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical Performance (1) Table 2. Maximum Ratings Rating Symbol 900 MHz 2140 MHz 2600 MHz Unit Noise Figure NF 1.2 1.6 1.3 dB Input Return Loss (S11) IRL --11.8 --21.3 --16.9 dB Output Return Loss (S22) ORL --13.4 --16.2 --20.9 dB Small--Signal Gain (S21) Gp 20.5 15.9 14.4 dB Power Output @ 1dB Compression P1db 24 24 24 dBm Third Order Input Intercept Point IIP3 18.2 23.5 26.2 dBm Third Order Output Intercept Point OIP3 38.7 39.4 40.6 dBm Characteristic CASE 2142--01 SOT--89 PLASTIC Symbol Value Unit Supply Voltage VDD 6 V Supply Current IDD 130 mA RF Input Power Pin 23 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature (2) TJ 150 C 2. For reliable operation, the junction temperature should not exceed 150C. 1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 85C, 5 Vdc, 84 mA, no RF applied Symbol Value (3) Unit RJC 59 C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (c) Freescale Semiconductor, Inc., 2010--2011. All rights reserved. RF Device Data Freescale Semiconductor MMG15241HT1 1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 14 15.9 -- dB Input Return Loss (S11) IRL -- --21.3 -- dB Output Return Loss (S22) ORL -- --16.2 -- dB Power Output @ 1dB Compression P1dB -- 24 -- dBm IIP3 -- 23.5 -- dBm Third Order Output Intercept Point OIP3 -- 39.4 -- dBm Reverse Isolation (S12) |S12| -- --22.5 -- dB NF -- 1.6 -- dB Supply Current (1) IDD 65 85 105 mA (1) VDD -- 5 -- V Characteristic Third Order Input Intercept Point Noise Figure Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150C. Table 5. Functional Pin Description Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 2 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 2 (Minimum) Machine Model (per EIA/JESD 22--A115) B (Minimum) Charge Device Model (per JESD 22--C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 C MMG15241HT1 2 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS 10 TC = 25C 21 0 S11 --40C S11, S22 (dB) Gp, SMALL--SIGNAL GAIN (dB) 25 85C 17 13 --10 S22 --20 VDD = 5 Vdc 9 0 0.5 1 1.5 2 VDD = 5 Vdc --30 2.5 3 0 0.5 1 1.5 2 2.5 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 2. Small--Signal Gain (S21) versus Frequency(1) Figure 3. Input/Output Return Loss versus Frequency(1) 3 1. Test fixture characteristics have been mathematically removed from the graphical data. MMG15241HT1 RF Device Data Freescale Semiconductor 3 50 OHM APPLICATION CIRCUIT: 2140 MHz VSUPPLY C5 Z4 C4 C1 RF INPUT Z1 L1 Z2 Z3 DUT Z5 RF OUTPUT Z7 Z6 C3 C6 C2 Z1 Z2 Z3 Z4 0.026 x 0.021 Microstrip 0.168 x 0.021 Microstrip 0.030 x 0.044 Microstrip 0.200 x 0.042 Microstrip Z5 Z6 Z7 0.030 x 0.044 Microstrip 0.172 x 0.021 Microstrip 0.353 x 0.021 Microstrip Figure 4. MMG15241HT1 Test Circuit Schematic Table 8. MMG15241HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.5 pF Chip Capacitor GJM1555C1H1R5CB01D Murata C2 0.8 pF Chip Capacitor GJM1555C1HR80BB01D Murata C3 0.7 pF Chip Capacitor GJM1555C1HR70BB01D Murata C4 56 pF Chip Capacitor GRM188RC1H560GA01D Murata C5 0.1 F Chip Capacitor GRM188R71H104KA93D Murata C6 5.6 pF Chip Capacitor GJM1555C1H5R6DB01D Murata L1 30 nH Chip Inductor 0603CS--30NXJLW Coilcraft PCB 0.010, r = 3.38, Multilayer IS680--338 Isola MMG15241HT1 4 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2140 MHz RFOUT RFIN C1 C6 C2 C3 L1 SOT--89--3B Rev. 0 C4 C5 VDD Figure 5. MMG15241HT1 Test Circuit Component Layout Table 8. MMG15241HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.5 pF Chip Capacitor GJM1555C1H1R5CB01D Murata C2 0.8 pF Chip Capacitor GJM1555C1HR80BB01D Murata C3 0.7 pF Chip Capacitor GJM1555C1HR70BB01D Murata C4 56 pF Chip Capacitor GRM188RC1H560GA01D Murata C5 0.1 F Chip Capacitor GRM188R71H104KA93D Murata C6 5.6 pF Chip Capacitor GJM1555C1H5R6DB01D Murata L1 30 nH Chip Inductor 0603CS--30NXJLW Coilcraft PCB 0.010, r = 3.38, Multilayer IS680--338 Isola (Component Designations and Values table repeated for reference.) MMG15241HT1 RF Device Data Freescale Semiconductor 5 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz --8 17 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) TC = --40C 16 85C 25C 15 14 --12 TC = --40C 25C --16 --20 VDD = 5 Vdc 13 2000 2075 2150 2225 2300 2150 2225 f, FREQUENCY (MHz) Figure 6. Small--Signal Gain (S21) versus Frequency Figure 7. Input Return Loss (S11) versus Frequency 2300 P1dB, 1 dB COMPRESSION POINT (dBm) 25 --10 TC = --40C --15 85C --20 25C VDD = 5 Vdc --25 2000 2075 2150 2225 24 TC = --40C 23 85C 25C 22 VDD = 5 Vdc 21 2040 2300 2090 2140 2190 2240 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 8. Output Return Loss (S22) versus Frequency Figure 9. P1dB versus Frequency 41 2.4 TC = 25C 40 NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) 2075 f, FREQUENCY (MHz) --5 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) VDD = 5 Vdc 85C --24 2000 85C 39 --40C 38 2 TC = 85C 1.6 25C 1.2 --40C VDD = 5 Vdc 37 2040 2090 2140 2190 2240 0.8 2000 2075 VDD = 5 Vdc 2150 2225 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 10. Third Order Output Intercept Point versus Frequency Figure 11. Noise Figure versus Frequency 2300 MMG15241HT1 6 RF Device Data Freescale Semiconductor ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz --15 --25 VDD = 5 Vdc, f = 2140 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --40C --35 TC = 85C 25C --45 --55 14 16.5 19 21.5 24 Pout, OUTPUT POWER (dBm) Figure 12. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power MMG15241HT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 900 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z2 Z1 Z3 C2 0.041 x 0.058 Microstrip 0.112 x 0.058 Microstrip Z3 Z4 RF OUTPUT Z4 L2 C1 Z1 Z2 DUT C5 0.090 x 0.058 Microstrip 0.085 x 0.058 Microstrip Figure 13. MMG15241HT1 Test Circuit Schematic Table 9. MMG15241HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 3.9 pF Chip Capacitor GQM1885C2A3R9CB01 Murata C2 0.6 pF Chip Capacitor GQM1885C2AR60CB01 Murata C3, C5 56 pF Chip Capacitors GRM188RC1H560GA01D Murata C4 0.1 F Chip Capacitor GRM188R71H104KA93D Murata L1 30 nH Chip Inductor 0603CS--30NXJLW Coilcraft L2 6.8 nH Chip Inductor 0603CS--6N8XJLW Coilcraft R1 0 , 1 A Chip Resistor ERJ3GEY0R00V Panasonic PCB 0.031, r = 4.1 Getek Grade ML200C GE Electromaterials R1 C4 C3 L2 C1 L1 C5 C2 SOT--89--3A Rev. 0 Figure 14. MMG15241HT1 Test Circuit Component Layout MMG15241HT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 900 MHz --3 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 22 21 20 19 VDD = 5 Vdc 18 750 900 975 --12 VDD = 5 Vdc 750 1050 825 900 975 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 15. Small--Signal Gain (S21) versus Frequency Figure 16. Input Return Loss (S11) versus Frequency P1dB, 1 dB COMPRESSION POINT (dBm) --12 --16 --20 VDD = 5 Vdc 825 900 975 25 24 23 VDD = 5 Vdc 22 800 1050 850 900 950 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 17. Output Return Loss (S22) versus Frequency Figure 18. P1dB versus Frequency 40 2 39 1.5 38 37 1 0.5 VDD = 5 Vdc 36 800 1050 26 NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) --9 --15 825 --8 --24 750 --6 850 900 950 1000 VDD = 5 Vdc 0 750 825 900 975 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 19. Third Order Output Intercept Point versus Frequency Figure 20. Noise Figure versus Frequency 1050 MMG15241HT1 RF Device Data Freescale Semiconductor 9 50 OHM APPLICATION CIRCUIT: 2600 MHz VSUPPLY C5 Z3 C4 RF INPUT C1 L1 Z1 Z2 DUT Z4 Z7 Z6 Z5 C3 Z1 Z2 Z3 Z4 0.149 x 0.021 Microstrip 0.030 x 0.044 Microstrip 0.200 x 0.042 Microstrip 0.030 x 0.044 Microstrip Z5 Z6 Z7 RF OUTPUT C2 C6 0.166 x 0.021 Microstrip 0.088 x 0.021 Microstrip 0.215 x 0.021 Microstrip Figure 21. MMG15241HT1 Test Circuit Schematic Table 10. MMG15241HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.0 pF Chip Capacitor GJM1555C1H1R0CB01D Murata C2 0.4 pF Chip Capacitor GJM1555C1HR40BB01D Murata C3 0.2 pF Chip Capacitor GJM1555C1HR20BB01D Murata C4 56 pF Chip Capacitor GRM188RC1H560GA01D Murata C5 0.1 F Chip Capacitor GRM188R71H104KA93D Murata C6 10 pF Chip Capacitor GJM1555C1H100JB01D Murata L1 30 nH Chip Inductor 0603CS--30NXJLW Coilcraft PCB 0.010, r = 3.38, Multilayer IS680--338 Isola MMG15241HT1 10 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2600 MHz RFOUT RFIN C1 C2 C6 C3 L1 C4 SOT--89--3B Rev. 0 C5 VDD Figure 22. MMG15241HT1 Test Circuit Component Layout Table 10. MMG15241HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.0 pF Chip Capacitor GJM1555C1H1R0CB01D Murata C2 0.4 pF Chip Capacitor GJM1555C1HR40BB01D Murata C3 0.2 pF Chip Capacitor GJM1555C1HR20BB01D Murata C4 56 pF Chip Capacitor GRM188RC1H560GA01D Murata C5 0.1 F Chip Capacitor GRM188R71H104KA93D Murata C6 10 pF Chip Capacitor GJM1555C1H100JB01D Murata L1 30 nH Chip Inductor 0603CS--30NXJLW Coilcraft PCB 0.010, r = 3.38, Multilayer IS680--338 Isola (Component Designations and Values table repeated for reference.) MMG15241HT1 RF Device Data Freescale Semiconductor 11 50 OHM TYPICAL CHARACTERISTICS: 2600 MHz --10 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 15 14.5 14 13.5 VDD = 5 Vdc 13 2450 2525 2600 2675 --16 VDD = 5 Vdc 2525 2600 2675 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 23. Small--Signal Gain (S21) versus Frequency Figure 24. Input Return Loss (S11) versus Frequency 2750 25 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) --14 --18 2450 2750 --16 --18 --20 --22 VDD = 5 Vdc --24 2450 2525 2600 2675 24.25 23.5 22.75 VDD = 5 Vdc 22 2500 2750 2550 2600 2650 2700 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 25. Output Return Loss (S22) versus Frequency Figure 26. P1dB versus Frequency 42 2 40.5 1.75 NF, NOISE FIGURE (dB) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) --12 39 37.5 1.5 1.25 VDD = 5 Vdc 36 2500 2550 2600 2650 VDD = 5 Vdc 2700 1 2450 2525 2600 2675 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 27. Third Order Output Intercept Point versus Frequency Figure 28. Noise Figure versus Frequency 2750 MMG15241HT1 12 RF Device Data Freescale Semiconductor 1.90 3.00 2X 45 4.35 2X 1.25 3X 0.70 0.85 2X 1.50 Figure 29. PCB Pad Layout for SOT--89A MG241H YYWW Figure 30. Product Marking MMG15241HT1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MMG15241HT1 14 RF Device Data Freescale Semiconductor MMG15241HT1 RF Device Data Freescale Semiconductor 15 MMG15241HT1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software * .s2p File Development Tools * Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. FAILURE ANALYSIS At this time failure analysis is limited to electrical signature analysis. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec. 2010 * Initial Release of Data Sheet 1 Apr. 2011 * Table 2, Maximum Ratings, updated RF Input Power from 13 dBm to 23 dBm as a result of new measurements done over temperature and bias, p. 1 MMG15241HT1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2010--2011. All rights reserved. MMG15241HT1 Document Number: MMG15241H Rev. 1, 4/2011 18 RF Device Data Freescale Semiconductor