SEMICONDUCTOR MJD112/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A FEATURES I C J D High DC Current Gain. Low Collector-Emitter Saturation Voltage. K Q Straight Lead (IPAK, "L" Suffix) O Complementary to MJD117/L. M B VCE=4V, IC=1A. E : hFE=1000(Min.), H MAXIMUM RATING (Ta=25 P F ) 2 L 3 SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V 1. BASE Collector-Emitter Voltage VCEO 100 V 3. EMITTER Emitter-Base Voltage VEBO 5 V DC Collector Current Pulse DC Collector Power Ta=25 Dissipation Tc=25 50 mA 1.0 PC DPAK A 4 IB 2. COLLECTOR I A C J W 20 DIM A B C D E F G H I J K L P Q Storage Temperature Range Tj 150 Tstg -55 150 K Junction Temperature Q B Base Current 2 IC P H E G C F B 1 R1 R2 = 10k = 0.6k MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 1.10 + 0.2 _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX D CHARACTERISTIC 1 F DIM A B C D E F H I J K L M O P Q F 2 L 3 MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.0 + 0.2 _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER E IPAK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT V VCEO(SUS) IC=30mA, IB=0 100 - - ICEO VCE=50V, IB=0 - - 20 ICBO VCB=100V, IE=0 - - 20 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 DC Current Gain hFE 500 - - VCE=3V, IC=2A 1,000 12,000 - Collector-Emitter Sustaining Voltage Collector Cut-off Current VCE=3V, IC=0.5A A mA Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.0 V Base-Emitter On Voltage VBE(ON) VCE=3V, IC=2A - - 2.8 V 25 - - MHz - - 100 pF Current Gain Bandwidth Product Collector Output Capacitance 2003. 3. 27 Revision No : 4 fT Cob VCE=10V, IC=0.75A, f=1MHz VCB=10V, IE=0, f=0.1MHz 1/2 MJD112/L h FE - I C 10 VCE =3V 5k SATURATION VOLTAGE VCE(sat) , VBE(sat) (V) DC CURRENT GAIN h FE 10k V CE(sat) ,V BE(sat) - I C 3k 1k 500 300 100 0.01 0.03 0.1 1 0.3 3 I C /I B =250 5 3 VBE(sat) 1 VCE(sat) 0.5 0.3 0.1 0.01 5 0.03 COLLECTOR CURRENT I C (A) POWER DISSIPATION PC (W) CAPACITANCE C ob (pF) 25 f=0.1MHz 100 50 30 3 5 3 5 P C - Ta 200 1 1 COLLECTOR CURRENT I C (A) C ob - V CB 10 0.3 0.1 30 10 50 COLLECTOR-BASE VOLTAGE V CB (V) 1 Tc=25 C 2 Ta=25 C 1 20 15 10 5 2 0 0 50 100 150 200 CASE TEMPERATURE Ta ( C) SAFE OPERATING AREA COLLECTOR CURRENT I C (A) 10 I C MAX.(PULSED) * 5 3 I C MAX. (CONTINUOUS) DC OPERATION Tc=25 C 1 10 1m 5m S* S* 0 S* 0.5 0.3 0.1 * SINGLE NONREPETIVE PULSE Tc=25 C 0.05 0.03 0.01 CURVES MUST BE DREATED LINEARLY WITH INCREASE IN TEMPERATURE 1 3 10 30 100 200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2003. 3. 27 Revision No : 4 2/2