TECHNICAL DATA SHEET
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N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592
T4-LDS-0051 Rev. 2 (101154) Page 1 of 4
DEVICES LEVELS
2N7228 2N7228U JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (T C = +25°C unless otherwise noted)
TO-254AA
U-PKG (U3)
TO-276AB
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS 500 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
T
C = +25°C ID1 12.0 Adc
Continuous Drain Current
T
C = +100°C ID2 8.0 Adc
Max. Power Dissipation
T
C = +25°C Ptl 150
(1) W
Drain to Source On State Resistance Rds(on) 0.415
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 8A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS 500 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 400V
VGS = 0V, VDS = 400V, T
= +125°C
IDSS1
IDSS2
25
0.25
µAdc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID = 8.0A pulsed
VGS = 10V, ID = 12.0A pulsed
Tj = +125°C
VGS = 10V, ID = 8.0A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.415
0.515
0.90
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = 12A pulsed VSD 1.7 Vdc