BSR 15, BSR 16 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage PNP PNP Power dissipation - Verlustleistung Plastic case Kunststoffgehause 1.1 2.9 0.1 0.4 1.3 0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Mae in mm 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSR 15 BSR 16 40 V 60 V Collector-Emitter-voltage B open - VCE0 Collector-Base-voltage E open - VCB0 60 V Emitter-Base-voltage C open - VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) - IC 600 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 800 mA Peak Base current - Basis-Spitzenstrom - IBM 200 mA Junction temp. - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. - ICB0 - - 20 nA - ICB0 - - 20 :A - ICB0 - - 10 nA - ICB0 - - 10 :A - IEB0 - - 50 nA Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 50 V IE = 0, - VCB = 50 V, Tj = 150/C IE = 0, - VCB = 60 V IE = 0, - VCB = 60 V, Tj = 150/C BSR 15 BSR 16 Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 8 01.11.2003 Switching Transistors BSR 15, BSR 16 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 10 V, - IC = 0.1 mA - VCE = 10 V, - IC = 1 mA - VCE = 10 V, - IC = 10 mA - VCE = 10 V, - IC = 500 mA BSR 15 hFE 35 - - BSR 16 hFE 75 - - BSR 15 hFE 50 - - BSR 16 hFE 100 - - BSR 15 hFE 75 - - BSR 16 hFE 100 - - BSR 15 hFE 30 - - BSR 16 hFE 50 - - hFE 100 - 300 - VCE = 10 V, - IC = 150 mA Collector saturation volt. - Kollektor-Sattigungsspg. 1) - IC = 150 mA, - IB = 15 mA - VCEsat - - 400 mV - IC = 500 mA, - IB = 50 mA - VCEsat - - 1.6 V Base saturation voltage - Basis-Sattigungsspannung 1) - IC = 150 mA, - IB = 15 mA - VBEsat - - 1.3 V - IC = 500 mA, - IB = 50 mA - VBEsat - - 2.6 V 200 MHz - - - 8 pF - CEB0 - 30 pF - turn-on time ton - - 40 ns delay time td - - 12 ns tr - - 30 ns toff - - 365 ns ts - - 300 ns tf - - 65 ns Gain-Bandwidth Product - Transitfrequenz - VCE = 20 V, - IC = 20 mA, f = 100 MHz fT Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten rise time turn-off time storage time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung 420 K/W 2) BSR 13, BSR 14 BSR 15 = T7 BSR 16 = T8 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 9