1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
801.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BSR 15, BSR 16 Switching Transistors
PNP Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BSR 15 BSR 16
Collector-Emitter-voltage B open - VCE0 40 V 60 V
Collector-Base-voltage E open - VCB0 60 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) - IC600 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 800 mA
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 50 V BSR 15 - ICB0 – – 20 nA
IE = 0, - VCB = 50 V, Tj = 150/C- I
CB0 – – 20 :A
IE = 0, - VCB = 60 V BSR 16 - ICB0 – – 10 nA
IE = 0, - VCB = 60 V, Tj = 150/C- I
CB0 – – 10 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V - IEB0 – – 50 nA
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
9
01.11.2003
Switching Transistors BSR 15, BSR 16
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 10 V, - IC = 0.1 mA BSR 15 hFE 35 – –
BSR 16 hFE 75 – –
- VCE = 10 V, - IC = 1 mA BSR 15 hFE 50 – –
BSR 16 hFE 100 – –
- VCE = 10 V, - IC = 10 mA BSR 15 hFE 75 – –
BSR 16 hFE 100 – –
- VCE = 10 V, - IC = 500 mA BSR 15 hFE 30 – –
BSR 16 hFE 50 – –
- VCE = 10 V, - IC = 150 mA hFE 100 – 300
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- IC = 150 mA, - IB = 15 mA - VCEsat – – 400 mV
- IC = 500 mA, - IB = 50 mA - VCEsat – – 1.6 V
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 150 mA, - IB = 15 mA - VBEsat – – 1.3 V
- IC = 500 mA, - IB = 50 mA - VBEsat – – 2.6 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 20 V, - IC = 20 mA, f = 100 MHz fT200 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 8 pF –
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 2 V, IC = ic = 0, f = 1 MHz CEB0 – 30 pF –
Switching times – Schaltzeiten
turn-on time
ICon = 150 mA
IBon = 15 mA
- IBoff = 15 mA
ton – – 40 ns
delay time td– – 12 ns
rise time tr– – 30 ns
turn-off time toff – – 365 ns
storage time ts– – 300 ns
fall time tf– – 65 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BSR 13, BSR 14
Marking - Stempelung BSR 15 = T7 BSR 16 = T8
