MOTORCLA SC XSTRS/R F nae o ff o3e7254 ooasas? 4 | - we: HT a9-al . BC445, A : BC447, A, B MAXIMUM RATINGS BC449, A, B Rating Symbol | BC} BC| BC Unit 445|447/449 CASE 29-04, STYLE 17 . Collector-Emitter Voltage VcEO 60 | 80 |100 Vde . TO-92 (TO-226AA) Collector-Base Voltage VcBo 60 | 80 |100 Vde Emitter-Base Voltage VEBO 5.0 Vdc Sy 1 Collector Collector Current ~ Continuous Io 300 mAdc Total Device Dissipation @Ta = 25C Pp 625 mw Derate above 25C 5.0 mW/C Beco Total Device Dissipation @Tc = 25C Pp 4.5 Watt 1 3 Derate above 25C 12 mWw/C 2 3 Emitter Operating and Storage Junction Ty. Tstg | - 55 to +150 C 3 Temperature Range - HERMAL CHARACTERISTICS r as : HIGH VOLTAGE TRANSISTORS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rasc 83.3 C/W NPN SILICON Thermal! Resistance, Junction to Ambient| Raja 200 C/W . Refer to MPS8098 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) _- Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* VIBR)CEO Vde (Ig = 1.0 mAde, Ig = 0} BC445 60 - - 8C447 80 ~ _- 8C449 100 - _- Collector-Base Breakdown Voltage V(BR)CBO Vde {Ic = 100 pA, le = 0) BC445 60 _ _ BC447 80 _ - BCc449 100 = _ Emitter-Base Breakdown Voltage . V(BR)EBO 5.0 _- _- Vde (Ir = 10 pAdc, Ic = 0) Collector Cutoff Current IcBo nAdc (Vcop = 40 Vde, Ie = 0) BC445 - _- 100 . (Vcp = 60 Vde, Ig = 0) BC447 _ _ 100 Vcp = 80 Vde, ig = 0) 8C449 - - 100 ON CHARACTERISTICS* DC Current Gain . hee _- (Ic = 2.0 mA, VcE = 5.0 V) BC445/447/449 50 _ 460 BC445A/447A/449A 120 - 220 BC447B/449B 180 ~ 460 (lg = 10 mA, VcE = 5.0 V) BC445/447/449 50 - - BC445A/447A/449A 100 _ _ BC447B/449B 160 - - (Ic = 100 mA, VcgE = 5.0 V) BC445/447/449 50 - _- BCA45A/447A/449A, 60 ~ - BC447B/449B 90 _- = Collector-Emitter Saturation Voltage Vck(sat} _ 0.1 0.25 Vde (Ic = 100 mAdc, Ip = 10 mAdc) Base-Emitter Saturation Voltage VBE(sat) _ 0.85 _ Vde {lc = 100 mAdc, Ig = 10 mAdc) Base-Emitter On Voltage VBE(on) Vde (lc = 2.0 mA, VcE = 5.0 V} 0.55 _ 0.7 {Ic = 100 mA, Vcg = 5.0 V)* ~ 0.8 1.2 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product fr 100 250 _ MHz {Ic = 50 mAde, Voce = 5.0 Vde, f = 100 MHz) *Pulse Test: Pulse Width < 300 ys, Duty Cycle 2.0%. MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-102