ee FAIRCHILD August 1997 ee SEMICONDUCTOR FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel lagic level enhancement mode field 25 V, 0.68 A continuous, 2 A Peak. effect transistors are produced using Fairchild's proprietary, Rogion) = 0.6 2 @ Vag= 2.7 V high cell density, DMOS technology. This very high density Rosion = 0.45 @ V6= 4.5 V. process is especially tailored to minimize on-state ; . ; . resistance. This device has been designed especially for . Very low level gate drive requirements allowing direct low voltage applications as a replacement for digital operation in 3V circuits. Vigy)< 1.5 V. transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias = Gate-Source Zener for ESD ruggedness. >6kV Human Body Model resistors like the IMHxA series. = Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET. if i SupersoT.6 Mark: .303 D2 SuperSOT -6 Absolute Maximum Ratings 1, = 25C unless otherwise noted Symbol | Parameter FDC6303N Units Vosa Drain-Source Voltage 25 V Voss Gate-Source Voltage 8 I, Drain Current - Continuous 0.68 A - Pulsed 2 Py Maximum Power Dissipation (Note 1a) 09g Ww (Note 1b) O07 Ty Teta Operating and Storage Temperature Range -55 to 150 c ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf/ 1500 Ohm) THERMAL CHARACTERISTICS Raia Thermal Resistance, Junction-to-Ambient (Note 14) 140 oCAN Rae Thermal Resistance, Junction-to-Case (Note 1} 60 SCAN 1997 Fairchild Semiconductor Corporation FDC8303N Rev C DMOS Electrical Characteristics (1, = 25 C unless otherwise noted ) Symbol | Parameter | Conditions | Min | Typ | Max | Units OFF CHARACTERISTICS BY ose Drain-Source Breakdown Voltage Veg = OV, |= 250 LA 25 V ABV pgZAT, | Breakdown Voltage Temp. Coefficient |= 250 LA, Referenced to 25C 26 mv fC loss Zero Gate Voltage Drain Current Vog = 20V, Vag= OV 1 HA T, =55C 10 HA nas Gate - Body Leakage Current Vag = BV, Vie OV 100 nA ON CHARACTERISTICS (note 3 AV rem fAT Gate Threshold Voltage Temp.Coefficient |= 250 LA, Referenced to 25C 26 mV PC Vasiny Gate Threshold Voltage Vos = Vie |p = 250 pA 0.65 0.8 15 V Pasiany Static Drain-Source On-Resistance Vege 4.5 V, 1,=0.5A 0.33 0.45 o T, =125C 052 | 08 Vag= 2.7 , 1,=0.2A 044 | 06 lyon) On-State Drain Current Voge 2.7V, Vig=5V 05 A Ors Forward Transconductance Voge = SV, I= O5A 1.45 s DYNAMIC CHARACTERISTICS Co. Input Capacitance Vog= 10V, V4 =0 V, 50 pF Cree Ouiput Capacitance f= 1.0 MHz 28 pF Coes Reverse Transfer Capacitance g pF SWITCHING CHARACTERISTICS ince en Turn - On Delay Time Voy =6V, |, =O.5A, 3 6 ns t Turn - Gn Rise Time Vag = 45 V, Rey = 50.0 85 18 ns tora Turn - Off Delay Time 17 30 ns t Turn - Off Fall Time 13 25 ns Q, Total Gate Charge Vos = SV, |,=0.5A, 1.64 23 nc Q,, Gate-Source Charge Ves=45V 0.38 nc Qs Gate- Drain Charge 0.45 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS ls Maximum Continuous Source Current 0.3 A Von Drain-Source Diode Forward Voltage Veg= OV, 1,=0.5A wots 0.83 12 V Notes 1 R,,,/8 the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins R,,,is guaranteed by design while R,,, is determined by the user's board design R,,, shown below for single device operation on FR+4 in still air ' ogc Ono a 140CAW on 20125 in? pad of Ie 20z copper 2 Pulse Test Pulse Width 300us Duty Cycle <2 0% 1B0CAV on a 0 O05 in? of pad of 20z copper FDC6303N Rev C Typical Electrical Characteristics Io DRAIN-SOURCE CURRENT (A} 0 05 1 15 Vpg DRAIN-SOURCE VOLTAGE (} Figure 1. On-Region Characteristics. tal Veg= 45" | | _ r Ib =05A a o8 Pa i Rosen); NORMALIZED DRAIN-SOURGE GN-RESISTANGE ht O6 -50 25 Qo 25 50 75 100 125 Ty JUNSTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 150 1 T T Vpg = 5.0V T= 55C 25C 08 vy E L 2 ra ToG 2 a i z2 azo4 c a L Doe Y y] 7 a 0 o5 1 156 2 Veg GATE TO SOURCE VOLTAGE (} Figure 5. Transfer Characteristics. 25 R DSten) NORMALIZED DRAIN-SOU RCE ON-RESISTANGE Roston) ON-RESISTANGCE (OHM) Ig REVERSE DRAIN GURRENT (A) 0 Of o4 OG oa 1 12 Ip ORAIN GURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 4 15 2 25 3 35 4 45 5 Vag GATE TO SOURCE VOLTAGE () Figure 4. On Resistance Variation with Gate-To- Source Voltage. Ty = 125C of c: oot ooo1 e000 Q o2 o4 OG o8 1 12 Vgp BODY DIODE FORWARD VOLTAGE (} Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6303N Rev C Typical Electrical And Thermal Characteristics Veg GATE-SOURCE VOLTAGE ()} Ip, DRAIN CLUIRRENT (A) CAPAGITANGE (pF) D o4 08 12 16 2 o1 Os 1 2 5 10 25 Q, GATE CHARGE (nd) Vog DRAIN TO SGURCE VOLTAGE (Vv) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 4 SINGLE PULSE Resa=See note 1b > TA= 25C 23 o uw 3 we Ves =4.5V SINGLE PULSE R wa = See note 1b Ta= 25C a a1 62 o5 4 2 19 20 49 oo 04 1 10 100 300 Vopg ORAIN-SOQURGE VOLTAGE () SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Faia =r Rua R qa = See Note 1b rtt) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANGE o1 P(pk) 00s hoe 002 ta Sin le Ty-Ta =P 7 R guaith Duty Cycle D=t 4/t > oot o0001 0001 oot 01 1 10 100 300 ty TIME {sec} Figure 11. Transient Thermal Response Curve. Note Thermal characterization performed using the conditions described in note 1p Transient thermal response will change depending on the circuit board design FDC6303N Rev C