MMBT2907-G (PNP)
RoHS Device
General Purpose TransistorGeneral Purpose Transistor
QW-BTR04 Page 1
REV:A
SMD Diodes Specialist
O
Maximum Ratings(at TA=25 C unless otherwise noted)
Collector-Base voltage
Collector current-Continuous
Symbol
Parameter Min
Max
Unit
V
-60
ICM -0.6 A
0.3 WPCM
Powe r dissipatioin
+150
TSTG , TJ
Storage tempe rat ur e an d jun ction tempe rat ur e -55
Features
-Epitaxial planar die construction
-Device is designed as a general purpose
amplifier and switching.
Dimensions in inches and (millimeter)
SOT-23
0.066 (1.70)
1 2
3
0.119 (3.00)
0.110 (2.80)
0.103 (2.60)
0.086 (2.20)
0.020 (0.50)
0.013 (0.35)
0.056 (1.40)
0.047 (1.20)
0.044 (1.10)
0.035 (0.90)
0.083 (2.10)
0.007 (0.20) min
0.006 (0.15) max
0.006 (0.15)
1
Base
2
Emitter
Collector
3
VCBO
oC
O
Electrical Characteristics(at TA=25 C unless otherwise noted)
Symbol
Parameter Min
Max
Unit
Symbol
Parameter Min
Max
Unit
Collector-Base breakdown voltage
Collector-emitter breakdown voltage
Conditions
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=-10µA, IE=0
IC=-10mA, IB=0
IE=-10µA, IC=0
VCB=-50V, IE=0
VCB=-35V, IB=0
VEB=-3V, IC=0
VCE=-10V, IC=-150mA
VCE=-10V, IC=-1mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-20V, IC=-50mA
F=100MHz
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
-60
-40
-5
-0.1
-0.1
-0.1
300
100
50
-1
-2
200
V
V
V
µA
µA
µA
V
V
Mhz