MJ802 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  



. . . for use as an output device in complementary audio amplifiers to 100–Watts

music power per channel.

•High DC Current Gain — hFE = 25–100 @ IC = 7.5 A

•Excellent Safe Operating Area

•Complement to the PNP MJ4502

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCER

ÎÎÎÎÎÎÎÎ

100

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎÎÎ

VCB

ÎÎÎÎÎÎÎÎ

100

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

4.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

7.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25°C

Derate above 25

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

200

1.14

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

θJC

ÎÎÎÎÎÎÎÎ

0.875

ÎÎÎÎ

C/W

200

150

100

040 60 120 140 200

Figure 1. Power–Temperature Derating Curve

TC, CASE TEMPERATURE (

0 20 80 100 160 180

PD, POWER DISSIPATION (WATTS)



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ802/D

 Motorola, Inc. 1995



30 AMPERE

POWER TRANSISTOR

NPN SILICON

100 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

MJ802

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage(1) (IC = 200 mAdc, RBE = 100 Ohms)

ÎÎÎÎ

BVCER

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage(1) (IC = 200 mAdc)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCB = 100 Vdc, IE = 0, TC = 150

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain(1) (IC = 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

100

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter “On” Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

2.0

ÎÎÎÎ

—

ÎÎÎ

MHz

(1)Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

hFE, NORMALIZED CURRENT GAIN

IC, COLLECTOR CURRENT (AMP)

TJ = 175

3.0

IC, COLLECTOR CURRENT (AMP)

1.0

2.0

0.7

1.0

0.5

0.1

Figure 2. DC Current Gain Figure 3. ‘‘On” Voltages

VBE(sat) @ IC/IB = 10

VCE = 2.0 V

– 55

TJ = 25

0.03 0.1 0.2 0.3 0.5 10 20 30

“ON” VOLTAGE (VOLTS)

0.3

0.2

0.05 2.0 3.0 5.0

DATA SHOWN IS OBTAINED FROM PULSE TESTS

AND ADJUSTED TO NULLIFY EFFECT OF ICBO.

2.0

1.8

1.4

1.6

1.2

1.0

0.8

0.6

0.4

0.2

1.00.03 0.1 0.2 0.3 0.5 10 20 300.05 2.0 3.0 5.0

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

IC, COLLECTOR CURRENT (AMP)

1.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0 20

1.0

0.2

Figure 4. Active Region Safe Operating Area

100

5.0

2.0

0.5

0.1

2.0 3.0 1005030

SECONDARY BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATIONS TC = 25

PULSE DUTY CYCLE

≤

10%

TJ = 200

100

s1.0 ms

5.0 ms

The Safe Operating Area Curves indicate IC – VCE limits

below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the

applicable Safe Area to avoid causing a catastrophic failure.

To insure operation below the maximum TJ, power tempera-

ture derating must be observed for both steady state and

pulse power conditions.

MJ802

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

MJ802

4 Motorola Bipolar Power Transistor Device Data

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MJ802/D

*MJ802/D*

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