BL Galaxy Electrical Production specification
NPN SWITCHING TRANSISTOR MMBT3904
Document number: BL/SSSTC061 www.galaxycn.com
Rev.A 1
FEATURES
z Epitaxial planar die construction. Pb
Lead-free
z Complementary PNP type available
(MMBT3906).
z Collector Current Capability Ic=200mA.
z Collector-emitter Voltage VCEO=40V.
APPLICATIONS
z General switching and amplification SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT3904 1AM SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 60 - V
VCEO collector-emitter voltage open base 40 - V
VEBO emitter-base voltage open collector 6 - V
ICcollector current (DC) - 200 mA
ICM peak collector current - 200 mA
IBM peak base current - 100 mA
Ptot total power dissipation Tamb≤25°C - 250 mW
Tstg storage temperature -65 +150 °C
Tjjunction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Note Transistor mounted on an FR4 printed-circuit board.
BL Galaxy Electrical Production specification
NPN SWITCHING TRANSISTOR MMBT3904
Document number: BL/SSSTC061 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 30 V - 50 nA
IEBO emitter cut-off current IC = 0; VEB = 6 V - 50 nA
hFE DC current gain
VCE = 1 V;
IC= 0.1mA
IC = 1mA
IC = 10mA
IC = 50mA
IC = 100mA
60
80
100
60
30
-
-
300
-
-
IC = 10mA; IB = 1mA B- 200 mV
VCEsat
collector-emitter saturation
voltage IC = 50mA; IB = 5mA B- 300 mV
IC = 10mA; IB = 1mA B650 850 mV
VBEsat base-emitter saturation voltage IC = 50mA; IB = 5mA B- 950 mV
Cccollector capacitance IE = Ie= 0; VCB= 5V;
f = 1MHz - 4 pF
Ceemitter capacitance IC = Ic = 0; VBE=500mV;
f =1MHz - 8 pF
fTtransition frequency IC =10mA; VCE =20V;
f =100MHz 300 - MHz
F noise figure IC=100mA; VCE =5V;
RS =1kΩ;f =10Hz to15.7kHz - 5 dB
Switching times (between 10% and 90 % levels);
tddelay time - 35 ns
trrise time - 35 ns
tsstorage time - 200 ns
tffall time
ICon=10mA; IBon =1mA;
IBoff = -1mA
- 50 ns
Note Pulse test: tp≤300 ms; d≤0.02.
BL Galaxy Electrical Production specification
NPN SWITCHING TRANSISTOR MMBT3904
Document number: BL/SSSTC061 www.galaxycn.com
Rev.A 3
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification
NPN SWITCHING TRANSISTOR MMBT3904
Document number: BL/SSSTC061 www.galaxycn.com
Rev.A 4
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
D
C
B
A
G
K
H
J
E
PACKAGE INFORMATION
Device Package Shipping
MMBT3904 SOT-23 3000/Tape&Reel
