IRF8010S - INTERNATIONAL RECTIFIER

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IRFR3711PbF

IRFU3711PbF

SMPS MOSFET

HEXFET® Power MOSFET

VDSS RDS(on) max ID

20V 6.5mΩ110A

Notes  through  are on page 10

Applications

Benefits

lUltra-Low Gate Impedance

lVery Low RDS(on) at 4.5V VGS

lFully Characterized Avalanche Voltage

and Current

lHigh Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

lHigh Frequency Buck Converters for

Server Processor Power Synchronous FET

lOptimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

l100% RG Tested

lLead-Free

Absolute Maximum Ratings

Symbol Parameter Units

Drain-Source Voltage V

G at e - Sour c e V olt ag e

ID @ TC = 25°C Cont in uous Dra in Cur r ent, VGS @ 10V

ID @ TC = 100°C Cont in uous Dra in Cur r ent, VGS @ 10V A

IDM

Pulsed Drain Current

PD @TA = 25°C

Maximum Power Dissipation

PD @TC = 25°C Maximum Power Dissipation

Linear Derating Factor W/°C

TJ, T

STG

Junction and Storage Temperature Range °C

Thermal Resistance

Symbol Parameter Typ Max Units

RθJC Junc tion-to-Case

––– 1.04

RθJA Junction-to-Ambient (PCB Mount)

––– 50 °C/W

RθJA Junction-to-Ambient

––– 110

- 55 t o +150

Max

100

440

± 20

2.5

0.96

120

PD- 95073A

D-Pak I-Pak

IRFR3711 IRFU3711

IRFR/U3711PbF

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Static @ TJ = 25°C (unless other wis e spec ified)

Symbol Parameter Min Typ Max Units

(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V

∆

(BR)DSS

∆

J Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C

––– 5.2 6.5

––– 6.7 8.5

GS(th) Gate Threshold Voltage 1.0 ––– 3.0 V

––– ––– 140

––– ––– 20

––– ––– 100

Gate-to-Source Forward Leak age ––– ––– 200

Gate-to-Source Reverse Leakage ––– ––– -200

Dynam ic @ TJ = 25°C (unless otherwise spec ifie d)

Symbol Parameter Min Typ Max Units

fs Forward Transconductance 53 ––– ––– S

gTotal Gate Charge ––– 29 44

gs Gate-to-Source Charge ––– 7.3 –––

gd Gate-to-Drain ("Miller") Charge ––– 8.9 –––

oss Output Gate Charge ––– 33 –––

= 0V, V

10V

GGate Resistance 0.3 ––– 2.5 Ω

d(on) Turn-On Delay Time ––– 12 –––

rRise Time ––– 220 –––

d(off) Turn-Off Delay Time ––– 17 –––

fFall Time ––– 12 –––

iss Input Capacitance ––– 2980 –––

oss Output Capacitance ––– 1770 –––

rss Reverse Transfer Capacitance ––– 280 –––

Avalanche Characteristics

Symbol Parameter Units

Single Pulse Avalanche Energy

Avalanche Current

c

Diode Characteristics

Symbol Parameter Min Typ Max Units

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

c

––– 0.88 1.3

––– 0.82 –––

trr Reverse Recover y Time ––– 50 75 ns

Qrr Reverse Recovery Charge ––– 61 92 nC

trr Reverse Recover y Time ––– 48 72 ns

Qrr Reverse Recovery Charge ––– 65 98 nC

Typ

440

VDiode Forward Voltage

––– 110

––– –––

ISM

VSD

–––

MOSFET symb ol

showing the

RDS(on)

IDSS

IGSS

Static Drain-to-Source On-Resistance

Drain-to-Source Leakage Current

mΩ

µA

TJ = 125°C, IF = 16A, VR = 10V

di/dt = 100A/µs

TJ = 125°C, IS = 30A, VGS = 0V

Conditions

integral reverse

p-n junction diode.

TJ = 25°C, IS = 30A, VGS = 0V

TJ = 25°C, IF = 16A, VR = 10V

di/dt = 100A/µs

–––

Conditions

VDS = 16V, ID = 30A

ID = 15A

VDS = 10V

VGS = 4.5V

VGS = 0V

VDS = 10V

460

VDS = 20V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

VGS = 20V

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 15A

VGS = -20V

VGS = 4.5V, ID = 12A

Max

VGS = 4.5V

VDD = 10V

ID = 30A

RG = 1.8Ω

VDS = 16V, VGS = 0V

ƒ = 1.0MHz

VDS = VGS, ID = 250µA

IRFR/U3711PbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1 1 10 100

20µs PU LSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.7V

100

1000

0.1 1 10 100

20µs PU LSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.7V

100

1000

2.0 3.0 4.0 5.0 6.0 7.0 8.0

V = 2 5 V

20µs PULSE WIDTH

V , Gate-to-Sou rce Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 020 40 60 80 100 120 140 16

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On R e sistance

(Normalized)

DS(on)

V =

I =

10V

110A

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

010 20 30 40 50

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

D30A

V = 10V

V = 16V

0.1

100

1000

0.2 0.8 1.4 2.0 2.

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

1 10 100

VDS , Drain-toSource Voltage (V)

100

1000

10000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Singl e Pul s e

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

110 100

VDS, Drain-to- Sour ce V olt age (V )

100

1000

10000

100000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = C

gs + Cgd, C

ds SHORTED

Crss = C

Coss = C

ds + C

IRFR/U3711PbF

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Fig 10a. Switching Time Test Circuit

GS t

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. D u ty fa c to r D = t / t

2. Peak T =P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal R esponse (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150

100

120

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

IRFR/U3711PbF

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25 50 75 100 125 150

200

400

600

800

1000

1200

1400

Start ing T , Junction Te m per atur e ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

13A

19A

30A

QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

IRFR/U3711PbF

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P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

e-Applied

oltage

Reverse

Recovery

Current Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P.W.

Period

Fig 14. For N-Channel HEXFET® Power MOSFETs

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



IRFR/U3711PbF

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D-Pak (TO-252AA) Part Marking Information

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

IN THE ASSEMBLY LINE "A"

ASSEM BLED ON WW 16, 1999

EXAMPLE: WIT H ASS EMBLY

THIS IS AN IRFR120

LOT CODE 1234 YEAR 9 = 199

DATE CODE

WEEK 16

PART NUMBER

LOGO

INTERNATIONAL

RECTIFIER

ASSEMBLY

LOT CODE

916A

IRFU120

YEAR 9 = 1999

DATE CODE

P = DESIGNAT ES LE AD-F REE

PRO D UCT (OPTIONAL)

Note: "P" in assembly line position

indica tes "L ea d-F ree"

12 34

WEEK 16

A = AS SE MBLY SIT E CODE

PART NUMBER

IRFU120

LINE A

LOGO

LOT CODE

ASSEMBLY

INTERNATIONAL

RECTIFIER

IRFR/U3711PbF

www.irf.com 9

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

ASSEMBLY

EXAMPLE: WIT H AS SEMBLY

THIS IS A N IRFU12 0

YEA R 9 = 199

DATE CODE

LINE A

WEEK 1 9

IN THE ASSEMBLY LINE "A"

ASSE MBLED ON WW 19, 1999

LOT CODE 5678

PART NUMBER

IRFU120

INTERNATIONAL

LOGO

RECTIFIER

LOT COD E

919A

Note: "P" in assembly line

pos ition indica tes "Lead-Free"

56 78

AS S EMBLY

LOT CODE

RECTIFIER

LOGO

INTERNATIONAL

IRFU120

PART NUMB E R

WEEK 19

DATE CODE

YEAR 9 = 1999

A = AS S EMBLY SIT E CODE

P = DESIGNATE S LEAD-FR EE

PRO D UC T (O PTIO NA L)

IRFR/U3711PbF

10 www.irf.com

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 1/05

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

1 6 .3 ( .64 1 )

1 5 .7 ( .61 9 )

8.1 ( .318 )

7.9 ( .312 )

12.1 ( .476 )

11.9 ( .469 ) FEED DIRECTION FE ED DIRECTION

16.3 ( .641

)

15.7 ( .619

)

TRR TRL

OTES :

. CONTROLLING DIMENSION : MILL IMETER.

. ALL DIM ENSION S ARE SHOWN IN MI LLIMETERS ( INCHES ).

. OUT LINE CONF O RMS TO EIA-48 1 & EIA-5 4 1 .

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Starting TJ = 25°C, L = 1.0mH

RG = 25Ω, IAS = 30A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 30A.

 When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to

application note #AN-994

 Rθ is measured at TJ approximately at 90°C

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/