AQW612EHAZ - Panasonic

GU-E PhotoMOS (AQW61❍EH)

TYPES

*Indicate the peak AC and DC values.

Note: For space reasons, the SMD terminal shape indicator “A” and the package type indicator “X” and “Z” are omitted from the seal.

General use and economy

type. DIP (1 Form A/1 Form B)

8-pin type.

Reinforced insulation

5,000V type.

GU-E PhotoMOS

(AQW61❍EH)

Type

I/O

isolation

voltage

Output rating*

Part No.

Packing quantity

Through hole

terminal Surface-mount terminal

Load

voltage

Load

current Tube packing style

Tape and reel packing style

Tube Tape and

reel

Picked from the

1/2/3/4-pin side

Picked from the

5/6/7/8-pin side

AC/DC

type

Reinforced

5,000 V

60 V 500 mA AQW612EH AQW612EHA AQW612EHAX AQW612EHAZ 1 tube contains

40 pcs.

1 batch contains

400 pcs.

1,000 pcs.350 V 120 mA AQW610EH AQW610EHA AQW610EHAX AQW610EHAZ

400 V 100 mA AQW614EH AQW614EHA AQW614EHAX AQW614EHAZ

TESTING

(AQW610EH, 614EH)

(AQW612EH)

VDE

mm inch

3.2

.126

6.4

.252

9.86

.388

2.9

.114

6.4

.252

9.86

.388

N.C.

N.O.

FEATURES

1. 60V type couples high capacity

(0.5A) with low on-resistance (1Ω).

2. This is the PhotoMOS 1 Form A/1

Form B output type relay that has

attained a low, economical price.

3. Reinforced insulation 5,000 V type

More than 0.4 mm internal insulation

distance between inputs and outputs.

Conforms to EN41003, EN60950

(reinforced insulation).

4. Compact 8-pin DIP size

The device comes in a compact (W)

6.4×(L)9.86×(H)3.2 mm

(W).252×(L).388×(H).126 inch, 8-pin DIP

size (through hole terminal type).

5. Applicable for 1 Form A 1 Form B

use as well as two independent 1

Form A and 1 Form B use

6. Controls low-level analog signals

PhotoMOS relays feature extremely low

closed-circuit offset voltage to enable

control of low-level analog signals without

distortion.

7. High sensitivity, high speed

response.

Can control a maximum 0.14 A load

current with a 5 mA input current. Fast

operation speed of 0.5ms (typ.)

[N.O.].(AQW610EH)

8. Low-level off-state leakage current

TYPICAL APPLICATIONS

• Power supply

• Measuring equipment

• Security equipment

• Modem

• Telephone equipment

• Electricity, plant equipment

• Sensors

Item GU-E

(1 Form A/1 Form B type)

Part No. AQW610EH AQW612EH

Load voltage 350V 60V

Continuous

load current 0.12A 0.5A

ON resistance

(typ.) 18Ω1Ω

NEW

GU-E PhotoMOS (AQW61❍EH)

RATING

1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)

2. Electrical characteristics (Ambient temperature: 25°C 77°F)

Note: Recommendable LED forward current IF = 5 to 10 mA.

*Operate/Reverse time

■

Item Symbol AQW612EH (A) AQW610EH (A) AQW614EH (A) Remarks

Input

LED forward current IF50 mA

LED reverse voltage VR5 V

Peak forward current IFP 1 A f = 100 Hz, Duty factor = 0.1%

Power dissipation Pin 75 mW

Output

Load voltage (peak AC) VL60 V 350 V 400 V

Continuous load current IL0.5 A (0.6 A) 0.12 A (0.14 A) 0.1 A (0.13 A)

Peak AC, DC

( ): in case of using only 1a or 1b,

1 channel

Peak load current Ipeak 1.5 A 0.36 A 0.3 A 100 ms (1 shot), VL= DC

Power dissipation Pout 800 mW

Total power dissipation PT850 mW

I/O isolation voltage Viso 5,000 V AC

Temperature

limits

Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at low temperatures

Storage Tstg –40°C to +100°C –40°F to +212°F

Item Symbol AQW612EH (A) AQW610EH (A) AQW614EH (A) Condition

Input

LED operate

current

Typical IFon(N.O.)

IFoff(N.C.)

1.3 mA IL=Max.

Maximum 3.0 mA

LED reverse

current

Minimum IFoff(N.O.)

IFon(N.C.)

0.4 mA IL=Max.

Typical 1.3 mA

LED dropout

voltage

Typical VF

1.25 (1.14 V at IF = 5 mA) IF=50 mA

Maximum 1.5 V

Output

On resistance Typical Ron

1Ω18Ω26ΩIF=5mA (N.O.) IF = 0mA (N.C.)

IL = Max.

Within 1 s on time

Maximum 2.5Ω25Ω35Ω

Off state leakage

current Maximum ILeak 1µA (N.O.), 10µA (N.C.) IF=0 mA (N.O.) IF = 5 mA (N.C.)

VL = Max.

Transfer

characteristics

Operate (OFF)

time*

Typical Ton(N.O.)

Toff(N.C.)

1.0 ms (N.O.)

3.0 ms (N.C.)

0.5 ms (N.O.)

1.0 ms (N.C.)

0.5 ms (N.O.)

0.8 ms (N.C.) IF = 0 mA ➝ 5 mA

IL = Max.

Maximum 4.0 ms (N.O.)

10.0 ms (N.C.) 3.0 ms

Reverse (ON)

time*

Typical Toff(N.O.)

Ton(N.C.)

0.05ms (N.O.),

0.2ms (N.C.)

0.08ms (N.O.),

0.3ms (N.C.)

0.08ms (N.O.),

0.2ms (N.C.) IF = 5 mA ➝ 0 mA

IL = Max.

Maximum 1.0ms

I/O capacitance Typical Ciso

0.8 pF f = 1MHz

VB = 0 V

Maximum 1.5 pF

Initial I/O isolation

resistance Minimum Riso 1,000MΩ500 V DC

Ton

Input

Output 10%

90%

1) N.O. 2) N.C.

Toff

Input

Output 10%

90%

Ton

GU-E PhotoMOS (AQW61❍EH)

REFERENCE DATA

1-(1). Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

1-(2). Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

2-(1). On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

LED current: 5 mA; Load voltage; Max. (DC)

Continuous load current: Max. (DC)

Load current, mA

Ambient temperature, °C

200

150

100

0204060

80 85

–40 –20

AQW610EH

AQW614EH

Using only

1 channel

Using 2 channels

Load current, mA

200

300

400

500

600

700

100

Ambient temperature, °C

0204060

80 85

-40 -20

Using only 1 channel

Using 2 channels

AQW612EH

On resistance, Ω

Ambient temperature, °C

–40 –20

0204060

8085

AQW610EH

AQW614EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

2-(2). On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

LED current: 5 mA; Load voltage; Max. (DC)

Continuous load current: Max. (DC)

3. Operate time vs. ambient temperature

characteristics

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

4. Reverse time vs. ambient temperature

characteristics

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

On resistance, Ω

0.5

1.5

-40 -20 0 20 40 60

8085

Ambient temperature, °C

AQW612EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

Operate time, ms

-40 -20

0204060

80 85

Ambient temperature, °C

AQW612EH

AQW610EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

Reverse time, ms

0.2

0.4

0.6

-40 -20

0.8

0204060

80 85

Ambient temperature, °C

AQW610EH•AQW614EH

AQW610EH

AQW612EH

AQW614EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

5. LED operate current vs. ambient

temperature characteristics

Sample: All types;

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

6. LED reverse current vs. ambient

temperature characteristics

Sample: All types;

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

7. LED dropout voltage vs. ambient

temperature characteristics

Sample: All types;

LED current: 5 to 50 mA

LED operate current, mA

Ambient temperature, °C

–40 –20

0204060

80 85

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

LED reverse current, mA

Ambient temperature, °C

–40 –20

0204060

80 85

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

LED dropout voltage, V

Ambient temperature, °C

0–40 –20 20 40 60

80 85

50mA

30mA

20mA

10mA

5mA

1.5

1.4

1.3

1.2

1.1

1.0

8-(1). Current vs. voltage characteristics of

output at MOS portion

Measured portion: between terminals 5 and 6, 7 and 8;

Ambient temperature: 25°C 77°F

8-(2). Current vs. voltage characteristics of

output at MOS portion

Measured portion: between terminals 5 and 6, 7 and 8;

Ambient temperature: 25°C 77°F

9-(1). Off state leakage current vs. load voltage

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Ambient temperature: 25°C 77°F

531

–5 –3

140

120

–20

–40

–60

–80

–100

–120

–140

100

–2–4

AQW610EH

AQW614EH

–1

Between

terminals

5 and 6(N.O.)

Between

terminals

7 and 8(N.C.)

Voltage, V

Current, mA

AQW612EH

0.50 1

-0.5-1

0.2

0.4

0.6

-0.2

-0.4

-0.6

Voltage, V

Current, A

Between

terminals

5 and 6(N.O.)

Between

terminals

7 and 8(N.C.)

Off state leakage current, A

10–3

10–6

10–9

10–12

060 100

Load voltage, V

20 40 80

AQW610EH

AQW614EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

GU-E PhotoMOS (AQW61❍EH)

9-(2). Off state leakage current vs. load voltage

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Ambient temperature: 25°C 77°F

10-(1). Operate time vs. LED forward current

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

10-(2). Operate time vs. LED forward current

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

Off state leakage current, A

10–3

10–6

10–9

10–12

060 100

Load voltage, V

20 40 80

AQW612EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

Operate time, ms

1002030405060

LED forward current, mA

AQW610EH•AQW614EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

Operate time, ms

1002030405060

LED forward current, mA

AQW612EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

11-(1). Reverse time vs. LED forward current

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

11-(2). Reverse time vs. LED forward current

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

12-(1). Output capacitance vs. applied voltage

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Frequency: 1 MHz;

Ambient temperature: 25°C 77°F

Reverse time, ms

LED forward current, mA

10 20 30 40 50 601002030405060

0.5

0.4

0.3

0.2

0.1

AQW610EH•AQW614EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

Reverse time, ms

LED forward current, mA

10 20 30 40 500

0.5

0.4

0.3

0.2

0.1

AQW612EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

Output capacitance, pF

500

400

300

200

100

Applied voltage, V

10 20 30 40 60

AQW610EH•AQW614EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)

12-(2). Output capacitance vs. applied voltage

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Frequency: 1 MHz;

Ambient temperature: 25°C 77°F

Output capacitance, pF

500

400

300

200

100

Applied voltage, V

10 20 30 40 60

AQW612EH

Between terminal 5 and 6 (N.O.)

Between terminal 7 and 8 (N.C.)