Semiconductor Group 1
Silicon PIN Diodes BXY 43
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BXY 43A Q62702-X116–T1
BXY 43B Q62702-X104 Cathode: black dot,
BXY 43C Q62702-X105
Parameter Symbol Unit
Breakdown voltage V(BR) 150 V
Peak forward current, tp =1 µsIFRM 10 A
Junction temperature Tj175 ˚C
Storage temperature range Tstg
Total power dissipation Ptot 500 mW
Operating temperature range Top
Thermal Resistance
Junction - case Rth JC 80 K/W
Forward current IF400 mA
Values
150
20
600
70
500 150
20
600
70
500
BXY 43A BXY 43B BXY 43C
– 55 … + 150
– 55 … + 150
1) For detailed information see chapter Package Outlines.
●High-speed switching
●Phase shifting up to 10 GHz
●Power splitter
Semiconductor Group 2
BXY 43 BXY 43
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
UnitValues
Parameter Symbol
min. typ. max.
DC Characteristics
nAReverse current
VR = 100 V IR–5–
pFDiode capacitance
VR = 50 V, f = 1 MHz BXY 43A
BXY 43B
BXY 43C
CT
–
–
–
0.19
0.25
0.35
0.20
0.28
0.40
VForward voltage
I
F = 100 mA VF–1–
AC Characteristics
Ω
Forward resistance
I
F = 10 mA, f = 100 MHz BXY 43A
BXY 43B
BXY 43C
rf
–
–
–
1.2
1.0
1.0
–
–
–nsCharge carrier life time
I
F = 10 mA, IR = 6 mA BXY 43A
BXY 43B
BXY 43C
τL
–
–
–
250
350
350
–
–
–
Storage time
I
F = 10 mA, VR = 10 V BXY 43A
BXY 43B
BXY 43C
ts
–
–
–
15
20
25
–
–
–nHCase series inductance Ls– 0.3 – APreaging at forward current
for 168 hours BXY 43A
BXY 43B
BXY 43C
IL
–
–
–
0.2
0.2
0.5
–
–
–torr.1
– s
Gross and fine leakage test – – 10–8 –
