BQ4285EP - Texas Instruments

Features

➤Direct clock/calendar replace-

ment for IBM®AT-compatible

computers and other applications

➤114 bytes of general nonvolatile

storage

➤Enhanced features include:

-System wake-up capability—

alarm interrupt output active

in battery-backup mode

-2.7–3.6V operation (bq4285L);

4.5–5.5V operation (bq4285E)

-32kHz output for power

management

➤Automatic backup and write-

protect control to external SRAM

➤Functionally compatible with the

DS1285

➤Less than 0.5 µA load under bat-

tery operation

➤14 bytes for clock/calendar and

control

➤BCD or binary format for clock

and calendar data

➤Calendar in day of the week, day

of the month, months, and years,

with automatic leap-year adjust-

ment

➤Time of day in seconds, minutes,

and hours

-12- or 24-hour format

-Optional daylight saving

adjustment

➤Programmable square wave out-

put

➤Three individually maskable in-

terrupt event flags:

-Periodic rates from 122µs to

500ms

-Time-of-day alarm once per

second to once per day

-End-of-clock update cycle

➤24-pin plastic DIP or SOIC

General Description

The CMOS bq4285E/L is a low-power

microprocessor peripheral providing a

time-of-day clock and 100-year calen-

dar with alarm features and battery

operation. Other features include

three maskable interrupt sources,

square wave output, and 114 bytes of

general nonvolatile storage.

A 32.768kHz output is available for

sustaining power-management activi-

ties. Wake-up capability is provided by

an alarm interrupt, which is active in

battery-backup mode.

The bq4285E/L write-protects the

clock, calendar, and storage registers

during power failure. A backup bat-

tery then maintains data and oper-

ates the clock and calendar.

The bq4285E/L is a fully compatible

real-time clock for IBM AT-

compatible computers and other ap-

plications. The only external compo-

nents are a 32.768kHz crystal and a

backup battery.

The bq4285E/L integrates a

battery-backup controller to make a

28-Pin PLCC: No Longer Available

Pin Names

AD0–AD7Multiplexed address/data

input/output

MOT Bus type select input

CS Chip select input

AS Address strobe input

DS Data strobe input

R/W Read/write input

INT Interrupt request output

RST Reset input

SQW Square wave output

BC 3V backup cell input

X1–X2 Crystal inputs

NC No connect

CEIN RAM chip enable input

CEOUT RAM chip enable output

VOUT Supply output

VCC +5V supply

bq4285E/L

PN428501.eps

24-Pin DIP or SOIC

10 16

12 14

VCC

SQW

CEOUT

INT

RST

VSS

R/W

VOUT

AD0

AD1

AD2

AD3

AD4

AD5

AD6

AD7

VSS

CEIN

Pin Connections

Enhanced RTC With NVRAM Control

SLUS006A - MAY 1994 - REVISED MAY 2004

Block Diagram

standard CMOS SRAM nonvolatile during power-fail

conditions. During power-fail, the bq4285E/L auto-

matically write-protects the external SRAM and pro-

vides a VCC output sourced from the clock backup

battery.

Pin Descriptions

AD0–AD7Multiplexed address/data input/

output

The bq4285E/L bus cycle consists of two

phases: the address phase and the data-

transfer phase. The address phase precedes

the data-transfer phase. During the ad-

dress phase, an address placed on AD0–AD7

is latched into the bq4285E/L on the falling

edge of the AS signal. During the data-

transfer phase of the bus cycle, the AD0–AD7

pins serve as a bidirectional data bus.

MOT

Connect to VSS for normal operation

The setting should not be changed during

system operation. MOT is internally pulled

low by a 20KΩresistor. For the DIP and

SOIC packages, this pin is internally con-

nected to VSS, enabling the bus timing for

the Intel architecture.

CS Chip select input

CS should be driven low and held stable

during the data-transfer phase of a bus cy-

cle accessing the bq4285E/L.

Bus

Type MOT

Level DS

Equivalent R/W

Equivalent AS

Equivalent

Intel VSS

RD,

MEMR, or

I/OR

WR,

MEMW, or

I/OW

ALE

Table 1. Bus Setup

bq4285E/L

AS Address strobe input

AS serves to demultiplex the address/data

bus. The falling edge of AS latches the ad-

dressonAD0–AD7.Thisdemultiplexingpro-

cess is independent of the CS signal.

DS Data strobe input

With MOT=VSS,theDSinputisprovidedasig-

nalsimilartoRD,MEMR,orI/OR inan

Intel-based system. The falling edge on DS

is used to enable the outputs during a read

cycle.

R/W Read/write input

With MOT=VSS,R/W isprovidedasignalsimi-

lar to WR, MEMW, or I/OW in an Intel-

based system. The rising edge on R/W

latches data into the bq4285E/L.

INT Interrupt request output

INT is an open-drain output. This allows

INT to be valid in battery-backup mode for

the alarm interrupt. To use this feature,

INT must be connected to a power supply

other than VCC. INT is asserted low when

any event flag is set and the corresponding

event enable bit is also set. INT becomes

high-impedance whenever register C is read

(see the Control/Status Registers section).

RST Reset input

The bq4285E/L is reset when RST is pulled

low. When reset, INT becomes high-

impedance, and the bq4285E/L is not accessi-

ble. Table 4 in the Control/Status Registers

section lists the register bits that are cleared

by a reset.

Reset may be disabled by connecting RST to

VCC. This allows the control bits to retain their

states through power-down/power-up cycles.

SQW Square-wave output

SQW may output a programmable fre-

quency square-wave signal during normal

(VCC valid) system operation. Any one of

the 13 specific frequencies may be selected

through register A. This pin is held low

when the square-wave enable bit (SQWE)

in register B is 0 (see the Control/Status

Registers section).

A 32.768kHz output is enabled by setting

the SQWE bit in register B to 1 and the

32KE bit in register C to 1 after setting

OSC2–OSC0 in register A to 011 (binary).

BC 3V backup cell input

BC should be connected to a 3V backup cell

for RTC operation and storage register non-

volatility in the absence of power. When VCC

slews down past VBC (3V typical), the inte-

gral control circuitry switches the power

source to BC. When VCC returns above VBC,

the power source is switched to VCC.

Upon power-up, a voltage within the VBC

range must be present on the BC pin for

the oscillator to start up.

X1–X2 Crystal inputs

The X1–X2 inputs are provided for an ex-

ternal 32.768Khz quartz crystal, Daiwa

DT-26 or equivalent, with 6pF load capaci-

tance. A trimming capacitor may be neces-

sary for extremely precise time-base gen-

eration.

CEIN External RAM chip enable input,

active low

CEIN should be driven low to enable the

controlled external RAM. CEIN is internally

pulled up with a 50KΩresistor.

CEOUT External RAM chip enable output,

active low

When power is valid, CEOUT reflects CEIN.

VOUT Supply output

VOUT provides the higher of VCC or VBC,

switched internally, to supply external RAM.

VCC Positive power supply

VSS Ground

bq4285E/L

Functional Description

Address Map

The bq4285E/L provides 14 bytes of clock and con-

trol/status registers and 114 bytes of general nonvolatile

storage. Figure 1 illustrates the address map for the

bq4285L.

Update Period

The update period for the bq4285E/L is one second. The

bq4285E/L updates the contents of the clock and calen-

dar locations during the update cycle at the end of each

update period (see Figure 2). The alarm flag bit may

also be set during the update cycle.

The bq4285E/L copies the local register updates into the

user buffer accessed by the host processor. Whena1is

written to the update transfer inhibit bit (UTI) in regis-

ter B, the user copy of the clock and calendar bytes re-

mains unchanged, while the local copy of the same bytes

continues to be updated every second.

The update-in-progress bit (UIP) in register A is set

tBUC time before the beginning of an update cycle (see

Figure 2). This bit is cleared and the update-complete

flag (UF) is set at the end of the update cycle.

Figure 1. Address Map

Figure 2. Update Period Timing and UIP

bq4285E/L

Programming the RTC

The time-of-day, alarm, and calendar bytes can be written

in either the BCD or binary format (see Table 2).

These steps may be followed to program the time, alarm,

and calendar:

1. Modify the contents of register B:

a. Write a 1 to the UTI bit to prevent trans-

fers between RTC bytes and user buffer.

b. Write the appropriate value to the data for-

mat (DF) bit to select BCD or binary format

for all time, alarm, and calendar bytes.

c. Write the appropriate value to the hour

format (HF) bit.

2. Write new values to all the time, alarm, and

calendar locations.

3. Clear the UTI bit to allow update transfers.

On the next update cycle, the RTC updates all 10 bytes

in the selected format.

Square-Wave Output

The bq4285E/L divides the 32.768kHz oscillator fre-

quency to produce the 1 Hz update frequency for the

clock and calendar. Thirteen taps from the frequency di-

vider are fed to a 16:1 multiplexer circuit. The output of

this mux is fed to the SQW output and periodic inter-

rupt generation circuitry. The four least-significant bits

of register A, RS0–RS3, select among the 13 taps (see

Table 3). The square-wave output is enabled by writing

a 1 to the square-wave enable bit (SQWE) in register B.

A 32.768kHz output may be selected by setting

OSC2–OSC0 in register A to 011 while SQWE=1and

32KE = 1.

bq4285E/L

Address RTC Bytes

Range

Decimal Binary Binary-Coded

Decimal

0 Seconds 0–59 00H–3BH 00H–59H

1 Seconds alarm 0–59 00H–3BH 00H–59H

2 Minutes 0–59 00H–3BH 00H–59H

3 Minutes alarm 0–59 00H–3BH 00H–59H

Hours, 12-hour format 1–12 01H–OCH AM;

81H–8CH PM

01H–12H AM;

81H–92H PM

Hours, 24-hour format 0–23 00H–17H 00H–23H

Hours alarm, 12-hour format 1–12 01H–OCH AM;

81H–8CH PM

01H–12H AM;

81H–92H PM

Hours alarm, 24-hour format 0–23 00H–17H 00H–23H

6 Day of week (1=Sunday) 1–7 01H–07H 01H–07H

7 Day of month 1–31 01H–1FH 01H–31H

8 Month 1–12 01H–0CH 01H–12H

9 Year 0–99 00H–63H 00H–99H

Table 2. Time, Alarm, and Calendar Formats

Interrupts

The bq4285E/L allows three individually selected inter-

rupt events to generate an interrupt request. These

three interrupt events are:

nThe periodic interrupt, programmable to occur once

every 122 µs to 500 ms.

nThe alarm interrupt, programmable to occur once per

second to once per day, is active in battery-backup

mode, providing a “wake-up” feature.

nThe update-ended interrupt, which occurs at the end

of each update cycle.

Each of the three interrupt events is enabled by an indi-

vidual interrupt-enable bit in register B. When an event

occurs, its event flag bit in register C is set. If the corre-

sponding event enable bit is also set, then an interrupt

request is generated. The interrupt request flag bit

(INTF) of register C is set with every interrupt request.

Reading register C clears all flag bits, including INTF,

and makes INT high-impedance.

Two methods can be used to process bq4285E/L inter-

rupt events:

nEnable interrupt events and use the interrupt request

output to invoke an interrupt service routine.

nDo not enable the interrupts and use a polling routine

to periodically check the status of the flag bits.

The individual interrupt sources are described in detail

in the following sections.

Periodic Interrupt

The mux output used to drive the SQW output also

drives the interrupt-generation circuitry. If the periodic

interrupt event is enabled by writinga1totheperiodic

interrupt enable bit (PIE) in register C, an interrupt re-

quest is generated once every 122µs to 500ms. The pe-

riod between interrupts is selected by the same bits in

ble 3). Setting OSC2–OSC0 in register A to 011 does

not affect the periodic interrupt timing.

OSC2 OSC1 OSC0 RS3 RS2 RS1 RS0 Frequency Units Period Units

0100000 None None

0100001256 Hz 3.90625 ms

0100010128 Hz 7.8125 ms

0100011 8.192 kHz 122.070 µs

0100100 4.096 kHz 244.141 µs

0100101 2.048 kHz 488.281 µs

0100110 1.024 kHz 976.5625 µs

0100111512 Hz 1.95315 ms

0101000256 Hz 3.90625 ms

0101001128 Hz 7.8125 ms

010101064 Hz 15.625 ms

010101132 Hz 31.25 ms

010110016 Hz 62.5 ms

0101101 8 Hz 125 ms

0101110 4 Hz 250 ms

0101111 2 Hz 500 ms

0 1 1XXXX

32.768 kHz same as above defined

by RS3–RS0

Table 3. Square-Wave Frequency/Periodic Interrupt Rate

bq4285E/L

Alarm Interrupt

The alarm interrupt request is valid in battery-backup

mode, providing a “wake-up” capability. During each up-

date cycle, the RTC compares the hours, minutes, and

seconds bytes with the three corresponding alarm bytes.

If a match of all bytes is found, the alarm interrupt

event flag bit, AF in register C, is set to 1. If the alarm

event is enabled, an interrupt request is generated.

An alarm byte may be removed from the comparison by

setting it to a “don’t care” state. An alarm byte is set to a

“don’t care” state by writinga1toeachofitstwomost-

significant bits. A “don’t care” state may be used to select

the frequency of alarm interrupt events as follows:

nIf none of the three alarm bytes is “don’t care,” the

frequency is once per day, when hours, minutes, and

seconds match.

nIf only the hour alarm byte is “don’t care,” the

frequency is once per hour, when minutes and

seconds match.

nIf only the hour and minute alarm bytes are “don’t care,”

the frequency is once per minute, when seconds match.

nIf the hour, minute, and second alarm bytes are

“don’t care,” the frequency is once per second.

Update Cycle Interrupt

The update cycle ended flag bit (UF) in register C is set to

a 1 at the end of an update cycle. If the update interrupt

enable bit (UIE) of register B is 1, and the update transfer

inhibit bit (UTI) in register B is 0, then an interrupt re-

quest is generated at the end of each update cycle.

Accessing RTC bytes

Time and calendar bytes read during an update cycle

may be in error. Three methods to access the time and

calendar bytes without ambiguity are:

nEnable the update interrupt event to generate

interrupt requests at the end of the update cycle.

The interrupt handler has a maximum of 999ms to

access the clock bytes before the next update cycle

begins (see Figure 3).

nPoll the update-in-progress bit (UIP) in register A. If

UIP = 0, the polling routine has a minimum of tBUC

time to access the clock bytes (see Figure 3).

nUse the periodic interrupt event to generate

interrupt requests every tPI time, such that UIP = 1

always occurs between the periodic interrupts. The

interrupt handler will have a minimum of tPI/2 +

tBUC time to access the clock bytes (see Figure 3).

Oscillator Control

When power is first applied to the bq4285E/L and VCC is

above VPFD, the internal oscillator and frequency divider

are turned on by writing a 010 pattern to bits 4 through 6

of register A. A pattern of 011 behaves as 010 but addi-

tionally transforms register C into a read/write register.

This allows the 32.768kHz output on the square wave pin

to be turned on. A pattern of 11X turns the oscillator on,

but keeps the frequency divider disabled. Any other pat-

tern to these bits keeps the oscillator off.

bq4285E/L

Figure 3. Update-Ended/Periodic Interrupt Relationship

Power-Down/Power-Up Cycle

The bq4285E/L power-up/power-down cycles are differ-

ent. The bq4285L continuously monitors VCC for out-of-

tolerance. During a power failure, when VCC falls below

VPFD (2.53V typical), the bq4285L write-protects the clock

and storage registers. The power source is switched to BC

when VCC is less than VPFD and BC is greater than VPFD,

or when VCC is less than VBC and VBC is less than VPFD.

RTC operation and storage data are sustained by a valid

backup energy source. When VCC is above VPFD, the power

source is VCC. Write-protection continues for tCSR time af-

ter VCC rises above VPFD.

The bq4285E continuously monitors VCC for out-of-

tolerance. During a power failure, when VCC falls below

VPFD (4.17V typical), the bq4285E write-protects the clock

and storage registers. When VCC is below VBC (3V typical),

the power source is switched to BC. RTC operation and

storage data are sustained by a valid backup energy source.

When VCC is above VBC, the power source is VCC. Write-

protection continues for tCSR time after VCC rises above

VPFD.

An external CMOS static RAM is battery-backed using

the VOUT and chip enable output pins from the

bq4285E/L. As the voltage input VCC slows down during

a power failure, the chip enable output, CEOUT, is forced

inactive independent of the chip enable input CEIN.

This activity unconditionally write-protects the external

SRAM as VCC falls below VPFD. If a memory access is in

process to the external SRAM during power-fail detec-

tion, that memory cycle continues to completion before

the memory is write-protected. If the memory cycle is

not terminated within time tWPT (30µs maximum), the

chip enable output is unconditionally driven high,

write-protecting the controlled SRAM.

As the supply continues to fall past VPFD, an internal

switching device forces VOUT to the external backup energy

source. CEOUT is held high by the VOUT energy source.

During power-up, VOUT is switched back to the main

supply as VCC rises above the backup cell input voltage

sourcing VOUT

.IfV

PFD <V

BC on the bq4285L, the

switch to the main supply occurs at VPFD.CE

OUT is held

inactive for time tCER (200ms maximum) after the power

supply has reached VPFD, independent of the CEIN in-

put, to allow for processor stabilization.

During power-valid operation, the CEIN input is passed

through to the CEOUT output with a propagation delay

of less than 10ns.

Figure 4 shows the hardware hookup for the external RAM.

A primary backup energy source input is provided on

the bq4285E/L. The BC input accepts a 3V primary bat-

tery, typically some type of lithium chemistry. To pre-

vent battery drain when there is no valid data to retain,

VOUT and CEOUT are internally isolated from BC by the

initial connection of a battery. Following the first appli-

cation of VCC above VPFD, this isolation is broken, and

the backup cell provides power to VOUT and CEOUT for

the external SRAM.

bq4285E/L

Figure 4. External RAM Hookup to the bq4285E/L RTC

Control/Status Registers

The four control/status registers of the bq4285E/L are

accessible regardless of the status of the update cycle

(see Table 4).

nThe frequency of the square-wave and the periodic

event rate.

nOscillator operation.

nStatus of the update cycle.

RS0–RS3 - Frequency Select

These bits select one of the 13 frequencies for the SQW out-

put and the periodic interrupt rate, as shown in Table 3.

OS0–OS2 - Oscillator Control

These three bits control the state of the oscillator and di-

vider stages. A pattern of 010 enables RTC operation by

turning on the oscillator and enabling the frequency di-

vider. A pattern of 011 behaves as 010 but additionally

transforms register C into a read/write register. This al-

lows the 32.768kHz output on the square wave pin to be

turned on. A pattern of 11X turns the oscillator on, but

keeps the frequency divider disabled. When 010 is writ-

ten, the RTC begins its first update after 500ms.

UIP - Update Cycle Status

This read-only bit is set prior to the update cycle. When

UIP equals 1, an RTC update cycle may be in progress.

UIP is cleared at the end of each update cycle. This bit

is also cleared when the update transfer inhibit (UTI)

bit in register B is 1.

nUpdate cycle transfer operation

nSquare-wave output

nInterrupt events

nDaylight saving adjustment

nClock and calendar data formats

All bits of register B are read/write.

bq4285E/L

76543210

----RS3RS2RS1RS0

76543210

-OS2OS1OS0----

76543210

UIP OS2 OS1 OS0 RS3 RS2 RS1 RS0

76543210

UIP-------

7654 3 210

UTI PIE AIE UIE SQWE DF HF DSE

Reg. Loc.

(Hex) Read Write

Bit Name and State on Reset

7 (MSB) 6 5 4 3 2 1 0 (LSB)

A 0A Yes Yes1UIP na OS2 na OS1 na OS0 na RS3 na RS2 na RS1 na RS0 na

B 0B Yes Yes UTI na PIE 0 AIE 0 UIE 0 SQWE 0 DF na HF na DSE na

C 0C Yes No2INTF 0 PF 0 AF 0 UF 0 - 0 32KE na - 0 - 0

D 0DYesNoVRTna-0-0-0 - 0-0-0-0

Notes: na = not affected.

1. Except bit 7.

2. Read/write only when OSC2–OSC0 in register A is 011 (binary).

Table 4. Control/Status Registers

DSE - Daylight Saving Enable

This bit enables daylight-saving time adjustments when

written to 1:

nOn the last Sunday in October, the first time the

bq4285E/L increments past 1:59:59 AM, the time

falls back to 1:00:00 AM.

nOn the first Sunday in April, the time springs

forward from 2:00:00 AM to 3:00:00 AM.

HF - Hour Format

This bit selects the time-of-day and alarm hour format:

1 = 24-hour format

0 = 12-hour format

DF - Data Format

This bit selects the numeric format in which the time,

alarm, and calendar bytes are represented:

1 = Binary

0 = BCD

SQWE - Square-Wave Enable

This bit enables the square-wave output:

1 = Enabled

0 = Disabled and held low

UIE - Update Cycle Interrupt Enable

This bit enables an interrupt request due to an update

ended interrupt event:

1 = Enabled

0 = Disabled

The UIE bit is automatically cleared when the UTI bit

equals 1.

AIE - Alarm Interrupt Enable

This bit enables an interrupt request due to an alarm

interrupt event:

1 = Enabled

0 = Disabled

PIE - Periodic Interrupt Enable

This bit enables an interrupt request due to a periodic

interrupt event:

1 = Enabled

0 = Disabled

UTI - Update Transfer Inhibit

This bit inhibits the transfer of RTC bytes to the user

buffer:

1 = Inhibits transfer and clears UIE

0 = Allows transfer

7654 3 210

---- - -HF-

7654 3 210

---- - --DSE

7654 3 210

---- -DF--

7654 3 210

----SQWE - - -

7654 3 210

---UIE- ---

7654 3 210

--AIE- - ---

7654 3 210

UTI--- - ---

7654 3 210

-PIE-- - ---

bq4285E/L

Bits 0–3 - Unused Bits

These bits are always set to 0.

32KE–32KHz Enable Output

This bit may be set to a 1 only when the OSC2–OSC0

bits in register A are set to 011. Setting OSC2–OSC0 to

anything other than 011 clears this bit. If SQWE in reg-

ister B and 32KE are set, a 32.768KHz waveform is out-

put on the square wave pin.

UF - Update-Event Flag

This bit is set toa1attheendoftheupdate cycle.

Reading register C clears this bit.

AF - Alarm Event Flag

This bit is set to a 1 when an alarm event occurs. Read-

ing register C clears this bit.

PF - Periodic Event Flag

This bit is set to a 1 every tPI time, where tPI is the time

period selected by the settings of RS0–RS3 in register A.

Reading register C clears this bit.

INTF - Interrupt Request Flag

This flag is set to a 1 when any of the following is true:

AIE = 1 and AF = 1

PIE = 1 and PF = 1

UIE = 1 and UF = 1

Reading register C clears this bit.

Bits 0–6 - Unused Bits

These bits are always set to 0.

VRT - Valid RAM and Time

1 = Valid backup energy source

0 = Backup energy source is depleted

When the backup energy source is depleted (VRT = 0),

data integrity of the RTC and storage registers is not

guaranteed.

7654 3 210

---UF- ---

7654 3 210

--AF- - ---

7654 3 210

-PF- - - - - -

7654 3 210

INTF - - - - - - -

7654 3 210

VRT000 0 000

7654 3 210

-000 0 000

7654 3 210

VRT--- - ---

7654 3 210

INTF PF AF UF 0 32KE 0 0

7654 3 210

---- 0 -00

7654 3 210

---- -32KE - -

bq4285E/L

Absolute Maximum Ratings—bq4285L

Symbol Parameter Value Unit Conditions

VCC DC voltage applied on VCC relative to VSS -0.3 to 6.0 V

VTDC voltage applied on any pin excluding VCC

relative to VSS -0.3 to 6.0 V VT≤VCC + 0.3

TOPR Operating temperature 0 to +70 °C Commercial

TSTG Storage temperature -55 to +125 °C

TBIAS Temperature under bias -40 to +85 °C

TSOLDER Soldering temperature 260 °C For 10 seconds

Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.

Functional operation should be limited to the Recommended DC Operating Conditions detailed

in this data sheet. Exposure to conditions beyond the operational limits for extended periods of

time may affect device reliability.

Absolute Maximum Ratings—bq4285E

Symbol Parameter Value Unit Conditions

VCC DC voltage applied on VCC relative to VSS -0.3 to 7.0 V

VTDC voltage applied on any pin excluding VCC

relative to VSS -0.3 to 7.0 V VT≤VCC + 0.3

TOPR Operating temperature

0 to +70 °C Commercial

-40 to +85 °C Industrial “N”

TSTG Storage temperature -55 to +125 °C

TBIAS Temperature under bias -40 to +85 °C

TSOLDER Soldering temperature 260 °C For 10 seconds

Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation

should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to

conditions beyond the operational limits for extended periods of time may affect device reliability.

bq4285E/L

Recommended DC Operating Conditions—bq4285L (TA= TOPR)

Symbol Parameter Minimum Typical Maximum Unit

VCC Supply voltage 2.7 3.15 3.6 V

VIL Input low voltage -0.3 - 0.6 V

VIH Input high voltage 2.2 - VCC + 0.3 V

VBC Backup cell voltage 2.4 - 4.0 V

Notes: Typical values indicate operation at TA= 25°C.

Potentials are relative to VSS.

Recommended DC Operating Conditions—bq4285E (TA= TOPR)

Symbol Parameter Minimum Typical Maximum Unit

VCC Supply voltage 4.5 5.0 5.5 V

VIL Input low voltage -0.3 - 0.8 V

VIH Input high voltage 2.2 - VCC + 0.3 V

VBC Backup cell voltage 2.5 - 4.0 V

Notes: Typical values indicate operation at TA= 25°C.

Potentials are relative to VSS.

Crystal Specifications—bq4285E/L (DT-26 or Equivalent)

Symbol Parameter Minimum Typical Maximum Unit

fOOscillation frequency - 32.768 - kHz

CLLoad capacitance - 6 - pF

TPTemperature turnover point 20 25 30 °C

k Parabolic curvature constant - - -0.042 ppm/°C

Q Quality factor 40,000 70,000 -

R1Series resistance - - 45 KΩ

C0Shunt capacitance - 1.1 1.8 pF

C0/C1Capacitance ratio - 430 600

DLDrive level - - 1 µW

∆f/fOAging (first year at 25°C) - 1 - ppm

bq4285E/L

DC Electrical Characteristics—bq4285E (TA= TOPR, VCC = 5V ±10%)

Symbol Parameter Minimum Typical Maximum Unit Conditions/Notes

ILI Input leakage current - - ±1µAV

IN = VSS to VCC

ILO Output leakage current - - ±1µA

AD0–AD7, INT, and SQW

in high impedance,

VOUT = VSS to VCC

VOH Output high voltage 2.4 - - V IOH = -2.0 mA

VOL Output low voltage - - 0.4 V IOL = 4.0 mA

ICC Operating supply current - 7 15 mA Min. cycle, duty = 100%,

IOH = 0mA, IOL = 0mA

VSO Supply switch-over voltage - VBC -V

CCB Battery operation current - 0.3 0.5 µAVBC = 3V, TA= 25°C, no

load on VOUT or CEOUT

ICCSB Standby supply current - 300 - µA

VIN = VCC or VSS,

CS ≥VCC - 0.2,

no load on VOUT

VPFD Power-fail-detect voltage 4.0 4.17 4.35 V

VOUT1 VOUT voltage VCC - 0.3V - - V IOUT = 100mA, VCC >VBC

VOUT2 VOUT voltage VBC - 0.3V IOUT = 100µA, VCC < VBC

ICE Chip enable input current - - 100 µA Internal 50K pull-up

Note: Typical values indicate operation at TA= 25°C, VCC = 5V or VBC = 3V.

bq4285E/L

DC Electrical Characteristics—bq4285L (TA= TOPR, VCC = 3.13V ±0.45%)

Symbol Parameter Minimum Typical Maximum Unit Conditions/Notes

ILI Input leakage current - - ±1µAV

IN = VSS to VCC

ILO Output leakage current - - ±1µA

AD0–AD7, INT, and SQW

in high impedance,

VOUT = VSS to VCC

VOH Output high voltage 2.2 - - V IOH = -2.0 mA

VOL Output low voltage - - 0.4 V IOL = 4.0 mA

ICC Operating supply current - 5 9 mA Min. cycle, duty = 100%,

IOH = 0mA, IOL = 0mA

VSO Supply switch-over voltage

-V

PFD -VV

BC > VPFD

-V

BC -VV

BC < VPFD

ICCB Battery operation current - 0.3 0.5 µAVBC = 3V, TA= 25°C, no

load on VOUT or CEOUT

ICCSB Standby supply current - 100 - µA

VIN = VCC or VSS,

CS ≥VCC - 0.2,

no load on VOUT

VPFD Power-fail-detect voltage 2.4 2.53 2.65 V

VOUT1 VOUT voltage VCC - 0.3V - - V IOUT = 80mA, VCC >VBC

VOUT2 VOUT voltage VBC - 0.3V IOUT = 100µA, VCC < VBC

ICE Chip enable input current - - 120 µA Internal 30K pull-up

Note: Typical values indicate operation at TA= 25°C, VCC = 3V.

bq4285E/L

Capacitance—bq4285E/L (TA= 25°C, F = 1MHz, VCC = 5.0V)

Symbol Parameter Minimum Typical Maximum Unit Conditions

CI/O Input/output capacitance - - 7 pF VOUT = 0V

CIN Input capacitance - - 5 pF VIN = 0V

Note: This parameter is sampled and not 100% tested. It does not include the X1 or X2 pin.

except INT

For all outputs

OL-10

510 50pF

+5V

960

Figure 5. Output Load A—bq4285E

INT

OL-11

130pF

+5V

1.15K

Figure 6. Output Load B—bq4285E

AC Test Conditions—bq4285E

Parameter Test Conditions

Input pulse levels 0 to 3.0 V

Input rise and fall times 5 ns

Input and output timing reference levels 1.5 V (unless otherwise specified)

Output load (including scope and jig) See Figures 5 and 6

bq4285E/L

AC Test Conditions—bq4285L

Parameter Test Conditions

Input pulse levels 0 to 2.3 V

Input rise and fall times 5 ns

Input and output timing reference levels 1.2 V (unless otherwise specified)

Output load (including scope and jig) See Figures 7 and 8

Figure 7. Output Load A—bq4285L Figure 8. Output Load B—bq4285L

bq4285E/L

Read/Write Timing—bq4285E (TA= TOPR, VCC = 5V ±10%)

Symbol Parameter Minimum Typical Maximum Unit Notes

tCYC Cycle time 160 - - ns

tDSL DS low or RD/WR high time 80 - - ns

tDSH DS high or RD/WR low time 55 - - ns

tRWH R/W hold time 0 - - ns

tRWS R/W setup time 10 - - ns

tCS Chip select setup time 5 - - ns

tCH Chip select hold time 0 - - ns

tDHR Read data hold time 0 - 25 ns

tDHW Write data hold time 0 - - ns

tAS Address setup time 20 - - ns

tAH Address hold time 5 - - ns

tDAS Delay time, DS to AS rise 10 - - ns

tASW Pulse width, AS high 30 - - ns

tASD Delay time, AS to DS rise

(RD/WR fall) 35 - - ns

tOD Output data delay time from DS

rise (RD fall) - - 50 ns

tDW Write data setup time 30 - - ns

tBUC Delay time before update - 244 - µs

tPI Periodic interrupt time interval ----See Table 3

tUC Time of update cycle - 1 - µs

bq4285E/L

Read/Write Timing—bq4285L (TA= TOPR, VCC = 3.15V ±0.45%)

Symbol Parameter Minimum Typical Maximum Unit Notes

tCYC Cycle time 270 - - ns

tDSL DS low or RD/WR high time 135 - - ns

tDSH DS high or RD/WR low time 90 - - ns

tRWH R/W hold time 0 - - ns

tRWS R/W setup time 15 - - ns

tCS Chip select setup time 8 - - ns

tCH Chip select hold time 0 - - ns

tDHR Read data hold time 0 - 40 ns

tDHW Write data hold time 0 - - ns

tAS Address setup time 30 - - ns

tAH Address hold time 15 - - ns

tDAS Delay time, DS to AS rise 15 - - ns

tASW Pulse width, AS high 50 - - ns

tASD Delay time, AS to DS rise

(RD/WR fall) 55 - - ns

tOD Output data delay time from DS

rise (RD fall) - - 100 ns

tDW Write data setup time 50 - - ns

tBUC Delay time before update - 244 - µs

tPI Periodic interrupt time interval ----See Table 3

tUC Time of update cycle - 1 - µs

bq4285E/L

Motorola Bus Read/Write Timing—bq4285E/L (PLCC Package Only) Note: Package OBSOLETE

bq4285E/L

Intel Bus Write Timing—bq4285E/L

bq4285E/L

Intel Bus Read Timing—bq4285E/L

Power-Down/Power-Up Timing—bq4285E (TA= TOPR)

Symbol Parameter Minimum Typical Maximum Unit Conditions

tFVCC slew from 4.5V to 0V 300 - - µs

tRVCC slew from 0V to 4.5V 100 - - µs

tCSR CS at VIH after power-up 20 - 200 ms

Internal write-protection

period after VCC passes VPFD

on power-up.

tWPT Write-protect time for

external RAM 10 16 30 µs

Delay after VCC slows down

past VPFD before SRAM is

write-protected.

tCER Chip enable recovery time tCSR -tCSR ms

Time during which external

SRAM is write-protected after

VCC passes VPFD on power-up.

tCED Chip enable propagation

delay to external SRAM - 7 10 ns

Caution: Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode

may affect data integrity.

Power-Down/Power-Up Timing—bq4285E

bq4285E/L

Power-Down/Power-Up Timing—bq4285L (TA= TOPR)

Symbol Parameter Minimum Typical Maximum Unit Conditions

tFVCC slew from 2.7V to 0V 300 - - µs

tRVCC slew from 0V to 2.7V 100 - - µs

tCSR CS at VIH after power-up 20 - 200 ms

Internal write-protection

period after VCC passes VPFD

on power-up.

tWPT Write-protect time for ex-

ternal RAM

-0 - V

BC > VPFD

10 16 30 µsV

BC < VPFD

tCER Chip enable recovery time tCSR -tCSR ms

Time during which external

SRAM is write-protected after

VCC passes VPFD on power-up.

tCED Chip enable propagation

delay to external SRAM - 9 15 ns

Caution: Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode

may affect data integrity.

Power-Down/Power-Up Timing—bq4285L

bq4285E/L

Interrupt Delay Timing—bq4285E/L (PLCC Package Only) Note: Package OBSOLETE

Interrupt Delay Timing—bq4285E/L (TA= TOPR)

Symbol Parameter Minimum Typical Maximum Unit

tRSW Reset pulse width 5 - - µs

tIRR INT release from RST --2

IRD INT release from DS (RD)--2

Interrupt Delay Timing—bq4285E/L

bq4285E/L

bq4285E/bq4285L

P: 24-Pin DIP (0.600")

24-Pin P (0.600" DIP)

Dimension Inches Millimeters

Min. Max. Min. Max.

A 0.160 0.190 4.06 4.83

A1 0.015 0.040 0.38 1.02

B 0.015 0.022 0.38 0.56

B1 0.045 0.065 1.14 1.65

C 0.008 0.013 0.20 0.33

D 1.240 1.280 31.50 32.51

E 0.600 0.625 15.24 15.88

E1 0.530 0.570 13.46 14.48

e 0.600 0.670 15.24 17.02

G 0.090 0.110 2.29 2.79

L 0.115 0.150 2.92 3.81

S 0.070 0.090 1.78 2.29

.004

S: 24-Pin SOIC (0.300")

24-Pin S (0.300" SOIC)

Dimension Inches Millimeters

Min. Max. Min. Max.

A 0.095 0.105 2.41 2.67

A1 0.004 0.012 0.10 0.30

B 0.013 0.020 0.33 0.51

C 0.008 0.013 0.20 0.33

D 0.600 0.615 15.24 15.62

E 0.290 0.305 7.37 7.75

e 0.045 0.055 1.14 1.40

H 0.395 0.415 10.03 10.54

L 0.020 0.040 0.51 1.02

bq4285E/bq4285L

Data Sheet Revision History

Change

No. Page No. Description Nature of Change

11, 25 Package option change Last time buy for PLCC

21, 2, 3, 14, 15, 20,

24, 26, 27 Package option removal PLCC Last Time Buy Complete

Note: Change 1 = Jan. 1999 B changes from May 1994.

Change 2 = May 2004 (SLUS006A) changes from Jan. 1999 B

bq4285E/bq4285L

Ordering Information

bq4285E/L -

Package Option:

P = 24-pin plastic DIP (0.600)

S = 24-pin SOIC (0.300)

Device:

bq4285E Real-Time Clock With NVRAM Control

bq4285L Real-Time Clock With NVRAM Control

Temperature:

blank = Commercial (0 to +70°C)

*Contact factory for availability.

PACKAGING INFORMATION

Orderable Device Status (1) Package

Type Package

Drawing Pins Package

Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)

BQ4285EP ACTIVE PDIP N 24 15 Pb-Free

(RoHS) A42 SN N / A for Pkg Type

BQ4285LP OBSOLETE PDIP N 24 TBD Call TI Call TI

BQ4285LS OBSOLETE SOIC DW 24 TBD Call TI Call TI

BQ4285LSTR OBSOLETE SOIC DW 24 TBD Call TI Call TI

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered

at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and

package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS

compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame

retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is

provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the

accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take

reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on

incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited

information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI

to Customer on an annual basis.

PACKAGE OPTION ADDENDUM

www.ti.com 9-Oct-2007

Addendum-Page 1

MECHANICAL DATA

MPDI006B – SEPTEMBER 2001 – REVISED APRIL 2002

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

N (R–PDIP–T24) PLASTIC DUAL–IN–LINE

0.020 (0,51) MIN

0.021 (0,53)

0.015 (0,38)

0.100 (2,54)

0.070 (1,78) MAX 12

1.222 (31,04) MAX

0.125 (3,18) MIN

0’–15’

0.010 (0,25) NOM

0.425 (10,80) MAX

Seating Plane

0.200 (5,08) MAX

0.360 (9,14) MAX

0.010 (0,25)

4040051–3/D 09/01

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice.

C. Falls within JEDEC MS–010

MECHANICAL DATA

MPDI008 – OCTOBER 1994

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

N (R-PDIP-T**) PLASTIC DUAL-IN-LINE PACKAGE

24 PIN SHOWN

Seating Plane

0.560 (14,22)

0.520 (13,21)

0.610 (15,49)

0.590 (14,99)

524840

0.125 (3,18) MIN

2.390

(60,71)

(62,23)(53,09)

(51,82)

2.040

2.090 2.450 2.650

(67,31)

(65,79)

2.590

0.010 (0,25) NOM

4040053/B 04/95

0.060 (1,52) TYP

322824

1.230

(31,24)

(32,26) (36,83)

(35,81)

1.410

1.450

1.270

PINS **

DIM

0.015 (0,38)

0.021 (0,53)

A MIN

A MAX 1.650

(41,91)

(40,89)

1.610

0.020 (0,51) MIN

0.200 (5,08) MAX

0.100 (2,54)

0.010 (0,25) 0°–15°

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice.

C. Falls within JEDEC MS-011

D. Falls within JEDEC MS-015 (32 pin only)

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