HITACHI 2SB1244, 2SB1245 SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER 4.2max [ 1, Emitter 2, Collector 3, Base (Dimensions in mm) (JEDEC TO-92 MOD.) @ ABSOLUTE MAXIMUM RATINGS (Ta=25C) MAXIMUM COLLECTOR DISSIPATION _- CURVE Item Symbol| 2SB1244 2SB1245 Unit 12 Collector to base voltage | Veeo ~160 200 Vv ~ Collector to emitter voltage Wceo _ = 160 | -200 Vv e Emitter to base voltage | VERO ; 7 -5 -5 Vv i 0.8 Collector current _. Ic 100 -100 | mA Collector power dissipation | Pc 0.9 09) WwW & _Junction temperature Tj 150_ 150 C 5 os Storage temperature Tag 55 to +150 | -55 to +150 C 8 0 50 100 150 Ambient temperature Ta (C) lM ELECTRICAL CHARACTERISTICS (Ta=25C) _ Item Symbol _ Test Condition min, | _typ._|_max. Unit Collector to base breakdown voltage V(BRICBO | Ic = ~10pA, IE = 0 25B1244 | -160 vo _ | _ | 28B1245 | -200 -| Vv Collector to emitter breakdown voltage | Vipryceo Ic = -lmA, Ree = 25B 1244 ~160 | = Vv - | 28B1245 |-200| | | Vv Emitter to base breakdown voltage Vanrjeso | Te = ~1OpA, Ic=0 -5 _ = Vv Collector cutoff current IcBo | 2SB1 244 | Vea =-140V, le=0 _ = -10 HA _ 2SB1245 Vcp =-160V, Iz=0 _ -10_ _ pA DC current transfer ratio hrei* Vce=-5V, Ic =10mA 60 320 . hre2 Vce=-5, Ic=ImA 30 _ _ _ Base to emitter voltage - Vae | Vce=-5V, Ic=-lLOmA |= ] -i5 Vv Collector to emitter saturation voltage VeEtsati Ic =30m<A, Ip =3mA } +05 Vv Gain bandwidth product | fr Vee = -5V, Ic =-l0mA ; 140 | MHz Collector output capacitance Cob Vcp =-I0V, le=0,f= IMHz._ | 5.5 _ pF * The 25B1244 and 2SB1245 are grouped by hr as follows. [Grade ep | c di [he | 6010120 | 10010200 | 16010 320 | HITACHI 2SB1244, 2SB1245 TYPICAL OUTPUT CHARACTERISTICS 20 -16 = E = -2 E 3 8 -3 6 4 Tow A a =0 a 2 = =6 8 Collector to emitter voltage Vor (VW) DC CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT Vee = $V Pulse Test DC current wansfer ratio he 1 =? =5 ~io -30 50 Collector current le (mA) GAIN BANDWIDTH PRODUCT Vs. COLLECTOR CURRENT 500) Vee =5V 200 Pulse Test 50 Gain bandwidth product fr (MHz) 10 5 -05 b0 2 -3 10 ~ 20 Collector current Ie (mA) Collector current Ic (mA} Collector to emitier saturation vollage Wetws) (VW) Base 10 emitter saturation voliage Varina) (VY) Collector output capacitance Cob (pF) TYPICAL TRANSFER CHARACTERISTICS Loo ~30 20 Oo O02 ~O4 ~ 0.6 O8 1.0 Base to emitter voltage Vor (W) SATURATION VOLTAGE VS. COLLECTOR CURRENT Var (sat) Vee (sar) 2c . tae S10 =2 -5 -10 = 20 50 100 Collector current le (mAy COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 40 f=1MHz fe=0 20 10 i OS 1 -2 3 lo ~ 20 30 ~ 100 Collector 10 base voltage Ven (V)