ITT SEMICOND/ INTERMETALL SOE D MM 4642711 OO0C8e4 5TL MISTI BA243A, BA244A TOOLS Silicon Epitaxial Planar Diode Switches for electronic bandswitching in radio and TV tuners in the frequency range of 50 ... 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. These diodes are delivered taped. Details see Taping. Absolute Maximum Ratings max.1.9 max I, ne ~ 3.9 ry nd Cathode Mark max. 0,52 le Glass case JEDEC DO-35 54 A 2 according to DIN 41 880 Weight approx. 0.13 g Dimensions in mm Symbol Value Unit Reverse Voltage Vp 35 Vv Forward Current at Tamp = 25C le 100 mA Junction Temperature T, 150 C Storage Temperature Range Ts 55 to +150 C 110 ITT SEMICOND/ INTERMETALL SOE D M@ 4642711 0002830 213 MISTI BA243A, BA244A Characteristics at Tam = 25C Symbol Min. Typ. Max. Unit Forward Voltage Ve - - 1 Vv at l- = 100 mA Leakage Current at Vp = 20V In - - 50 nA at Va = 15 V, Tamp = 60C Ir - - 1 pA Dynamic Forward Resistance at f = 50 to 1000 MHz, Ir = 10 mA BA243A tf - 0.7 1 0 BA244A rf - 0.4 0.5 0 Relative Variation of Dynamic Forward Resistance Ar, - 100 with the Variaton of Forward Current in the Range of Tr Al - 5 - %/mA Ir = 2to40mA mer Capacitance Cot - ~_ 1.8 pF at Va = 3 V,f = 1 MHz Relative Variation of Capacitance with the Variation ACtot * 100 of Reverse Voltage in the Range of Va = 7 to 20 V, C. AVa, - 1 - %IN f = 100 MHz trent Series Inductance across Case L, - 2.5 - nH Capacitance Dynamic forward resistance versus reverse voltage versus forward current pF BA 243A, BA 244A 2 BA 243A ,BA 244A T;=25C f =1MHz Ctor 4 " BA 243A BA 2444 1 kHz 3 L NO 2 IN BA 244A 100 MHz 1 0 a 01 2 5 1 2 s 10 2 s ov 1 20345 10 2 345 100mA > ip 1 Tp 111