DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Preliminary Information DS5545-1.3 May 2002 FEATURES 10s Short Circuit Withstand Non Punch Through Silicon KEY PARAMETERS VDRM (typ) VT (max) IC (max) IC(PK) 1200V 4.3V 200A 400A APPLICATIONS Matrix Converters Brushless Motor Controllers Frequency Converters 7(E2) 2(E1E2) 6(G2) 11(C2) The Powerline range of modules includes half bridge, dual, chopper, bi-directional and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. 1(C2) 3(C1) 9(C1) 4(G1) 5(E1) The DIM200MBS12-A000 is a bi-directional 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Bi-directional switch circuit diagram ORDERING INFORMATION Order As: DIM200MBS12-A000 Note: When ordering, please use the whole part number. 11 10 1 2 3 8 9 6 7 5 4 Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM200MBS12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VDRM Test Conditions Parameter Collector-emitter voltage VGE = 0V Max. Units 1200 V 20 V (measured across terminals 2 and 3) VGES Gate-emitter voltage - Continuous collector current Tcase = 80C 200 A IC(PK) Peak collector current 1ms, Tcase = 110C 400 A Pmax Max. transistor power dissipation Tcase = 25C, Tj = 150C 1480 W Diode I2t value VR = 0, tp = 10ms, Tvj = 125C 6.25 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge - per module IEC1287. V1 = 1200V, V2 = 900V, 50Hz RMS 10 PC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200MBS12-A000 THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) Al2O3 Cu 22mm 12mm 175 Thermal resistance - transistor (per arm) Continuous dissipation - Min. Typ. Max. Units - - 84 C/kW - - 160 C/kW - - 15 C/kW junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 C Diode - - 125 C -40 - 125 C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM200MBS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 0.25 mA VGE = 0V, VCE = VCES, Tcase = 125C - - 6 mA Gate leakage current VGE = 20V, VCE = 0V - - 1 A VGE(TH) Gate threshold voltage IC = 10mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 200A - 2.2 2.6 V VGE = 15V, IC = 200A, , Tcase = 125C - 2.6 3.0 V On-state voltage VGE = 15V, IC = 200A - 4.3 5.0 V (measured across terminals 2 and 3) VGE = 15V, IC = 200A, Tcase = 125C - 4.7 5.4 V IF Diode forward current DC - - 200 A IFM Diode maximum forward current tp = 1ms - - 400 A VF Diode forward voltage IF = 200A - 2.1 2.4 V IF = 200A, Tcase = 125C - 2.1 2.4 V VCE = 25V, VGE = 0V, f = 1MHz - 23 - nF Symbol ICES IGES VT Parameter Collector cut-off current Test Conditions Cies Input capacitance LM Module inductance - per arm - - 30 - nH Internal transistor resistance - per arm - - 0.27 - m RINT SCData Short circuit. ISC Tj = 125C, VCC = 900V, I1 1375 - A tp 10s, VCE(max) = VCES - L*. di/dt I2 1125 - A IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200MBS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Min. Typ. Max. Units IC = 200A - 600 - ns Fall time VGE = 15V - 50 - ns EOFF Turn-off energy loss VCE = 600V - 20 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7 - 240 - ns L ~ 100nH - 95 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 25 - mJ Qg Gate charge - 2 - C Qrr Diode reverse recovery charge IF = 200A, VR = 600V, - 30 - C Irr Diode reverse current dIF/dt = 2100A/s - 125 - A - 13 - mJ Min. Typ. Max. Units IC = 200A - 800 - ns Fall time VGE = 15V - 70 - ns EOFF Turn-off energy loss VCE = 600V - 27 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7 - 385 - ns L ~ 100nH - 110 - ns - 40 - mJ IF = 200A, VR = 600V, - 50 - C dIF/dt = 1900A/s - 140 - A - 20 - mJ EREC Diode reverse recovery energy Tcase = 125C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM200MBS12-A000 TYPICAL CHARACTERISTICS 400 400 Common emitter Tcase = 25C Common emitter Tcase = 125C 350 Vce is measured at power busbars 350 Vce is measured at power busbars 300 300 and not the auxiliary terminals Collector current, IC - (A) Collector current, IC - (A) and not the auxiliary terminals 250 200 150 100 200 150 100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 50 0 0 250 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 50 0 0 4.0 Fig. 3 Typical output characteristics 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0 Fig. 4 Typical output characteristics 45 55 Tc = 125C, Vcc = 600V, 40 Rg = 4.7 Ohms Tc = 125C, V = 600V, 50 cc IC = 200A 45 35 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 40 30 25 20 15 35 30 25 20 15 10 10 Eon Eoff Erec 5 0 0 50 100 150 Collector current, IC - (A) 200 Fig. 5 Typical switching energy vs collector current 6/10 Eon Eoff Erec 5 0 4 10 6 8 Gate resistance, Rg - (Ohms) 12 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200MBS12-A000 400 450 Tj = 25C Tj = 125C Module IC Chip IC VF is measured at power busbars and not the auxiliary terminals 350 400 350 Collector current, IC - (A) Forward current, IF - (A) 300 250 200 150 300 250 200 150 100 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage, VF - (V) 50 Tcase = 125C Vge = 15V Rg = 4.7 Ohms 0 0 200 400 600 800 1000 1200 Collector emitter voltage, Vce - (V) Fig. 7 Diode typical forward characteristics 1400 Fig. 8 Reverse bias safe operating area 175 1000 Tcase =125C 100 125 Collector current, IC - (A) Reverse recovery current, Irr - (A) 150 100 75 tp = 50s tp = 100s IC(max) DC 10 tp = 1 ms 50 1 25 0 0 200 400 600 800 1000 1200 Reverse voltage, VR - (V) Fig. 9 Diode reverse bias safe operating area 1400 0.1 1 Tvj = 125C - Tc = 80C 10 100 10000 Fig. 10 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1000 Collector emitter voltage, Vce - (V) 7/10 DIM200MBS12-A000 350 1000 300 Diode 250 Transistor 100 Collector current, IC - (A) Transient thermal impedance, Zth (j-c) - (C/kW ) Tj = 125C Vge = 15V 10 200 150 100 IGBT Diode 1 0.001 1 2 3 Ri (C/KW) 1.9448 8.7614 46.2922 i (ms) 0.1596 2.2324 39.8386 Ri (C/KW) 6.1216 19.4376 74.0454 i (ms) 0.0064351 1.3234 31.1756 0.01 0.1 Pulse width, tp - (s) 1 Fig. 11 Transient thermal impedance 8/10 4 77.0166 176.9288 76.4438 97.9395 10 50 0 0 20 40 60 80 100 120 14 0 Case temperature, Tcase - (C) Fig. 12 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200MBS12-A000 PACKAGE DETAILS For further package information please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 0.5 28 0.5 6 62 0.8 48 0.3 11 1 10 2 3 7 4x Fast on tabs 8 5 9 4 93 0.3 3x M6 23 31 0.8 8 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 DIM200MBS12-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS5545-1 Issue No. 1.3 May 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com