AMIS40615AGA - AMI Semiconductor, Inc.

AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

1.0 General Description

The AMIS-40615 is a full-featured local interconnect network (LIN) transceiver designed to interface between a LIN protocol controller

and the physical bus. The transceiver is implemented in AMI Semiconductor’s SmartPower, high-voltage, mixed-signal 0.35µm CMOS

technology enabling both high-voltage analog circuitry and digital functionality to co-exist on the same chip.

The AMIS-40615 LIN device is a member of AMI Semiconductor’s in-vehicle networking (IVN) transceiver family and integrates a LIN

v2.0 physical transceiver and a 3.3V voltage regulator. It is designed to work in harsh automotive environments and is certified to the

TS16949 qualification flow.

The LIN bus is designed to communicate low rate data from control devices such as door locks, mirrors, car seats, and sunroofs at the

lowest possible cost. The bus is designed to eliminate as much wiring as possible and is implemented using a single wire in each node.

2.0 Key Features

2.1 LIN-Bus Transceiver

• LIN compliant to specification revision 2.0 (backwards compatible to version 1.3) and J2602

• SmartPower, high-voltage, mixed-signal 0.35µm CMOS technology

• Bus voltage ± 45V

• Transmission rate up to 20kBaud

• SOIC 14 Green package

2.2 Protection

• Thermal shutdown

• Indefinite short-circuit protection on pins LIN and WAKE towards supply and ground

• Load dump protection (45V)

• Bus pins protected against transients in an automotive environment

• ESD protection level for LIN, INH, WAKE, and Vbb up to ±8kV

2.3 EMI Compatibility

• Integrated slope control

2.4 Voltage Regulator

• Output voltage 3.3V / ~50mA

• Wake-up input

• Enable inputs for stand-by and sleep mode

• INH output for auxiliary purposes (switching of an external pull-up or resistive divider towards battery, control of an external voltage

regulator etc.)

2.5 Modes

• Normal mode: LIN communication with either low (up to 10kBaud) or normal slope

• Sleep mode: VCC is switched “off” and no communication on LIN bus

• Stand-by mode: VCC is switched “on” but there is no communication on LIN bus

• Wake-up bringing the component from sleep mode into standby mode is possible either by LIN command or digital input signal on

WAKE pin. Wake-up from LIN bus can also be detected and flagged when the chip is already in standby mode.

AMI Semiconductor – March 2007, M-20544-001

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

3.0 Ordering Information

Table 1: Ordering Information

Marketing Name Package Temperature Range

AMIS40615 AGA SOIC 150 14 GREEN (JEDEC MS-012) -40°C…105°C

4.0 Key Technical Characteristics

Table 2: Key Technical Characteristics

Symbol Parameter Min. Typ. Max. Unit

Vbb Nominal battery operating voltage 5 12 26 V

Vbb Load dump protection (1) 45 V

Ibb_SLP Supply current in sleep mode 20

µA

Regulated Vcc output in normal mode, Vcc load 1mA-30mA 3.23 3.30 3.37 V

Regulated Vcc output in normal mode, Vcc load 0mA-50mA 3.19 3.30 3.41 V

Vcc_out(5)

Regulated Vcc output in standby mode, Vcc load 0mA-50mA 3.17 3.30 3.43 V

Maximum continuous Vcc output current (2) 30 mA

Iout_max Maximum Vcc output current, thermal shutdown can occur(2) 50 mA

Operating DC voltage on WAKE pin 0 Vbb V

V_wake Maximum rating voltage on WAKE pin -45 45 V

Tj Junction thermal shutdown temperature 165 195 °C

Tamb Operating ambient temperature -40 +105 °C

Electrostatic discharge voltage (LIN, INH, WAKE, VBB) System HBM (3) -8 +8 kV

Electrostatic discharge voltage (LIN, INH, WAKE, VBB) HBM (4) -4 +4 kV

Vesd

Electrostatic discharge voltage (other pins) HBM (4) -2 +2 kV

Notes:

1. The applied transients shall be in accordance with ISO 7637 part 1, test pulse 5. The device complies with functional class C; class A can be reached

depending on the application and external components.

2. Current limitation is set above 50mA but thermal shutdown can occur for currents above 30mA.

3. Equivalent to discharging a 150pF capacitor through a 330Ω resistor conform to IEC Standard 1000-4-2. The specified values are a target to be verified on

first prototypes. Based on the evaluation results, additional external protection components might be recommended to reach the specified system ESD levels

4. Equivalent to discharging a 100pF capacitor through a 1.5kΩ resistor conform to MIL STD 883 method 3015.7.

5. Vcc voltage must be properly stabilized by external capacitors: capacitor of min. 80nF with ESR<10mΩ in parallel with a capacitor of min. 8µF, ESR<1Ω.

AMI Semiconductor – March 2007, M-20544-001

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

5.0 Block Diagram

LIN

AMIS-40615

GND

RxD

VBB

INH

Thermal

shutdown

TxD

VCC

COMP

Slope Control

Filter

POR

Band-

gap

V-reg

VBB

VCC

State

Wake-up

Control

WAKE

Osc

STB

PD20061213.1

TEST

OTP_ZAP

time-out

VCC

VBB

Figure 1: Block Diagram

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

6.0 Typical Application

6.1 Application Schematic

The EMC immunity of the master-mode device can be further enhanced by adding a capacitor between the LIN output and ground. The

optimum value of this capacitor is determined by the length and capacitance of the LIN bus, the number and capacitance of slave

devices, the pull-up resistance of all devices (master & slave), and the required time constant of the system, respectively.

Vcc voltage must be properly stabilized by external capacitors: capacitor of min. 80nF (ESR<10mΩ) in parallel with a capacitor of min.

8µF (ESR<1Ω).

KL30

LIN-BUS

KL31

LIN

VCC

Master Node

1 nF 1 kΩ

GND

10 uF

AMIS-

40615

Micro

controller

RxD

TxD

STB

GND

INH

LIN

WAKE

VCC

VBB

510

3411

VBAT

GND

10nF

100nF

WAKE

LIN

VCC

Slave Node

220pF

GND

10 uF

AMIS-

40615

Micro

controller

RxD

TxD

STB

GND

LIN

WAKE

VCC

VBB

510

3411

VBAT

GND

100nF

WAKE

10 uF 100nF 10 uF 100nF

10nF

Figure 2: Typical Application Diagram

6.2 Pin Description

6.2.1. Pin Out (top view)

RxD

TxD

STB

WAKE

LIN

VBB VCC

AMIS-

40615

PC20060426.1

GND

OTP_ZAP

INH

GND

TEST

Figure 3: Pin Configuration

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

6.2.2. Pin Description

Table 3: Pin Description

Pin Name Description

1 VBB Battery supply input

2 LIN LIN bus output/input

3 GND Ground

4 GND Ground

5 WAKE High voltage digital input pin to switch the part from sleep- to stand-by-mode

6 INH Inhibit output

7 OTP_ZAP Supply for programming of trimming bits at factory testing, should be grounded in the application

8 TEST Digital input for factory testing, should be grounded in the application

9 EN Enable input, transceiver in normal operation mode when high

10 STB Standby mode control input

11 GND Ground

12 TxD Transmit data input, low in dominant state

13 RxD Receive data output; low in dominant state; push-pull output

14 Vcc Supply voltage (output)

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

7.0 Functional Description

7.1 Overall Functional Description

LIN is a serial communication protocol that efficiently supports the control of mechatronic nodes in distributed automotive applications.

The domain is class-A multiplex buses with a single master node and a set of slave nodes.

AMIS-40615 is designed as a master or slave node for the LIN communication interface with integrated 3.3V voltage regulator having a

current capability up to 50mA for supplying any external components (microcontroller).

AMIS-40615 contains the LIN transmitter, LIN receiver, voltage regulator, power-on-reset (POR) circuits, and thermal shutdown (TSD).

The LIN transmitter is optimized for the maximum specified transmission speed of 20kBaud with EMC performance due to reduced slew

rate of the LIN output.

The junction temperature is monitored via a thermal shutdown circuit that switches the LIN transmitter and voltage regulator off when

temperature exceeds the TSD trigger level.

AMIS-40615 has four operating states (normal mode, low slope mode, stand-by mode, and sleep mode) that are determined by the

input signals EN, WAKE, STB, and TxD.

7.2 Operating States

AMIS-40615 provides four operating states, two modes for normal operation with communication, one stand-by without communication

and one low power mode with very low current consumption. See Figure 4.

EN goes from 0 to 1

while TxD = 0

EN goes from 1 to 0

while STB = 1

EN goes from 1 to 0

while STB = 0

Stand

by mode

Vcc: “on”

- LIN TX: “off”

- INH: “floating”

Term: “current source””

RxD: high/low

Normal mode

(normal slope)

-Vcc: “on”

-LIN TX: “on”

-INH: “high”/”floating”

-Term: 30k

Ω

-RxD: LIN data

Normal mode

(low slope)

Vcc: “on”

LIN TX: “on”

- INH: “high”/”floating”

Term: 30k

Ω

RxD:

LIN data

Sleep mode

-Vcc: “off”

-LIN TX: “off”

-INH: “floating”

-Term: “current source”

-RxD: =VCC

EN goes from 1 to 0 while STB = 1

EN goes from 0 to 1 while TxD = 1

EN goes from 1 to 0 while STB = 0

Power up Vbb

Local wake-up

or LIN wake-up

Figure 4: State Diagram

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

Table 4: Mode Selection

Mode Vcc RxD INH LIN 30kΩ on LIN Note

Normal - Slope On Low = dominant state

High = recessive state

High if STB = High during state

transition; floating otherwise

Normal slope On (1)

Normal - Low Slope On Low = dominant state

High = recessive state

High if STB = High during state

transition; floating otherwise

Low slope On (2)

Stand-by On Low after LIN wakeup, high otherwise Floating Off Off (3)

Sleep Off Clamped to Vcc Floating Off Off

Notes:

1. The normal slope mode is entered when pin EN goes high while TxD is in high state during EN transition.

2. The low slope mode is entered when pin EN goes high while TxD is in low state during EN transition. LIN transmitter gets on only after TxD returns to high after the

state transition.

3. The stand-by mode is entered automatically after power-up.

7.2.1. Normal Slope Mode

In normal slope mode the transceiver can transmit and receive data via LIN bus with speed up to 20kBaud. The transmit data stream of

the LIN protocol is present on the TxD pin and converted by the transmitter into a LIN bus signal with controlled slew rate to minimize

EMC emission. The receiver consists of the comparator that has a threshold with hysteresis in respect to the supply voltage and an

input filter to remove bus noise. The LIN output is pulled high via an internal 30kΩ pull-up resistor. For master applications it is needed

to put an external 1kΩ resistor with a serial diode between LIN and Vbb (or INH). See Figure 2. The mode selection is done by

EN=HIGH when TxD pin is high. If STB pin is high during the stand-by-to-normal slope mode transition, INH pin is pulled high.

Otherwise, it stays floating.

7.2.2. Low Slope Mode

In low slope mode the slew rate of the signal on the LIN bus is reduced (rising and falling edges of the LIN bus signal are longer). This

further reduces the EMC emission. As a consequence the maximum speed on the LIN bus is reduced up to 10kBaud. This mode is

suited for applications where the communication speed is not critical. The mode selection is done by EN=HIGH when TxD pin is low. In

order not to transmit immediately a dominant state on the bus (because TxD=LOW), the LIN transmitter is enabled only after TxD

returns to high. If STB pin is high during the standby-to-low slope mode transition, INH pin is pulled high. Otherwise, it stays floating.

7.2.3. Stand-by Mode

The stand-by mode is always entered after power-up of the AMIS-40615. It can also be entered from normal mode when the EN pin is

low and the stand-by pin is high. From sleep mode it can be entered after a local wake-up or LIN wakeup. In stand-by mode the Vcc

voltage regulator for supplying external components (e.g. a microcontroller) stays active. Also the LIN receiver stays active to be able to

detect a remote wake-up via bus. The LIN transmitter is disabled and the slave internal termination resistor of 30kΩ between LIN and

Vbb is disconnected in order to minimize current consumption. Only a pull-up current source between Vbb and LIN is active.

7.2.4. Sleep Mode

The sleep mode provides extreme low current consumption. This mode is entered when both EN and STB pins are low coming from

normal mode. The internal termination resistor of 30kΩ between LIN and Vbb is disconnected and also the Vcc regulator is switched off

to minimize current consumption.

7.2.5. Wake-up

AMIS-40615 has two possibilities to wake-up from sleep or stand-by mode (see Figure 4):

• Local wake-up: enables the transition from sleep mode to stand-by mode.

• Remote wake-up via LIN: enables the transition from sleep- to stand-by mode and can be also detected when already in standby

mode.

A local wake-up is only detected in sleep mode if a transition from low to high or from high to low is seen on the wake pin.

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

Wake

VBB

Detection of Local Wake-Up

Sleep Mode Stand-by Mode

50% VBB typ.

Wake

VBB

Detection of Local Wake-Up

Sleep Mode Stand-by Mode

PC20060427.3

50% VBB typ.

Figure 5: Local Wake-up Signal

A remote wake-up is only detected if a combination of (1) a falling edge at the LIN pin (transition from recessive to dominant) is

followed by (2) a dominant level maintained for a time period > tWAKE and (3) again a rising edge at pin LIN (transition from dominant to

recessive) happens.

LIN recessive level

LIN

tWAKE

40% Vbb

Detection of Remote Wake-Up

VBB

60% Vbb

Sleep Mode Stand-by Mode

LIN dominant level

PC20060427.2

Figure 6: Remote Wake-up Behavior

The wake-up source is distinguished by pin RxD in the stand-by mode:

• RxD remains high after power-up or local wake-up.

• RxD is kept low until normal mode is entered after a remote wake-up (LIN).

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

8.0 Electrical Characteristics

8.1 Definitions

All voltages are referenced to GND (Pin 13). Positive currents flow into the IC.

8.2 Absolute Maximum Ratings

Stresses above those listed in this clause may cause permanent device failure. Exposure to absolute maximum ratings for extended

periods may affect device reliability.

Table 5: Absolute Maximum Ratings

Symbol Parameter Min. Max. Unit

Vbb Battery voltage on pin Vbb (1) -0.3 +45 V

Vcc DC voltage on pin Vcc 0 +7 V

I_Vcc Current delivered by the Vcc regulator 50 mA

V_LIN LIN bus voltage (2) -45 +45 V

V_INH DC voltage on inhibit pin -0.3 Vbb + 0.3 V

V_WAKE DC voltage on WAKE pin -45 45 V

V_Dig_in DC input voltage on pins TxD, RxD, EN, STB -0.3 Vcc + 0.3 V

Tjunc Maximum junction temperature -40 +165 °C

Vesd Electrostatic discharge voltage (pins LIN, INH, WAKE, and Vbb) system HBM (3) -8 +8 kV

Electrostatic discharge voltage (pins LIN, INH, WAKE, and Vbb) HBM (4) -4 +4 kV

Electrostatic discharge voltage (other pins) HBM (4) -2.0 +2.0 kV

Electrostatic discharge voltage; charge device model (5) -250 +250 V

Notes:

1. The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, 3b, and 5. The device complies with functional class C; class A can be

reached depending on the application and external components.

2. The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, and 3b. The device complies with functional class C; class A can be

reached depending on the application and external components.

3. Equivalent to discharging a 150pF capacitor through a 330Ω resistor conform to IEC Standard 1000-4-2. The specified values are a target to be verified on first

prototypes. Based on the evaluation results, additional external protection components might be recommended to reach the specified system ESD levels.

4. Equivalent to discharging a 100pF capacitor through a 1.5k Ω resistor conform to MIL STD 883 method 3015.7.

5. Conform to EOS/ESD-DS5.3 (socket mode).

8.3 DC Characteristics

VBB = 5V to 26V; Tjunc = -40°C to +150°C; unless otherwise specified.

Table 6: DC Characteristics Supply

Symbol Parameter Conditions Min. Typ. Max. Unit

Pins VBB and VCC

Ibb_ON Supply current Normal mode; LIN recessive 1 mA

Ibb_STB Supply current Stand-by mode, Vbb = 5 – 18V 60 µA

Ibb_SLP Supply current Sleep mode, Vbb = 5 – 18V 20 µA

Regulator output voltage Normal mode, Vcc load 1mA-30mA 3.23 3.30 3.37 V

Regulator output voltage Normal mode, Vcc load 0mA-50mA 3.19 3.30 3.41 V

Vcc_out

Regulator output voltage Stand-by mode, Vcc load 0mA-50mA 3.17 3.30 3.43 V

Iout_max_cont Maximum output current Vbb = 16V; Tamb = 105°C 30 mA

Iout_max_conta Maximum output current Vbb = 26V; limited lifetime 30 mA

Iout_max_abs Absolute maximum output current Thermal shutdown can occur 50 mA

Iout_lim Over-current limitation 50 150 mA

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

Table 7: DC Characteristics LIN Transmitter

Symbol Parameter Conditions Min. Typ. Max. Unit

Pin LIN

VLin_dom_LoSup LIN dominant output voltage TXD = low; Vbb = 7.3V 1.2 V

VLin_dom_HiSup LIN dominant output voltage TXD = low; Vbb = 18V 2.0 V

VLin_rec LIN recessive output voltage TXD = high; Ilin = 0mA Vbb - Vγ (1) V

ILIN_lim Short circuit current limitation VLin = Vbb_max 40 130 mA

Rslave Internal pull-up resistance 20 33 47 kΩ

ILIN_off_dom LIN output current bus in dominant state Driver off; Vbb = 12V -1 mA

ILIN_off_rec LIN output current bus in recessive state Driver off; Vbb = 12V 20 µA

ILIN_no_GND Communication not affected Vbb = GND = 12V; 0 < VLin < 18V -1 1 mA

ILIN_no_Vbb LIN bus remains operational Vbb = GND = 0V; 0 < VLin < 18V 100 µA

Note:

1. Vγ is the forward diode voltage. Typically (over the complete temperature) Vγ = 1V.

Table 8: DC Characteristics LIN Receiver

Symbol Parameter Conditions Min. Typ. Max. Unit

Pin LIN

Vrec_dom Receiver threshold LIN bus recessive → dominant 0.4 0.6 Vbb

Vrec_rec Receiver threshold LIN bus dominant → recessive 0.4 0.6 Vbb

Vrec_cnt Receiver center voltage (Vbus_dom + Vbus_rec) / 2 0.475 0.525 Vbb

Vrec_hys Receiver hysteresis 0.05 0.175 Vbb

Table 9: DC Characteristics I/Os

Symbol Parameter Conditions Min. Typ. Max. Unit

Pin WAKE

V_wake_th Threshold voltage 0.35 0.65 Vbb

I_leak Input leakage current (1) Vwake = 0V; Vbb = 18V -1 -0.5 1 µA

T_wake_min Debounce time Sleep mode; rising and falling edge 8 54

µs

Pins TxD and STB

Vil Low level input voltage 0.8 V

Vih High level input voltage 2.0 V

Rpu Pull-up resistance to Vcc (1) 50 200

kΩ

Pin INH

Delta_VH High level voltage drop IINH = 15mA 0.35 0.75 V

I_leak Leakage current Sleep mode; VINH = 0V -1 1 µA

Pin EN

Vil Low level input voltage 0.8 V

Vih High level input voltage 2.0 V

Rpd Pull-down resistance to ground (1) 50 200

kΩ

Pin RxD

Vol Low level output voltage Isink = 2mA 0.65 V

Voh High level output voltage Isource = -2mA Vcc - 0.65V V

Note:

1. By one of the trimming bits, following reconfiguration can be done during chip-level testing in order to fit the AMIS-40615 into different interface: pins TxD and EN

will have typ. 10kΩ pull-down resistor to ground and pin WAKE will have typ. 10µA pull-up current source.

Table 10: DC Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

POR

PORH_Vbb POR high level Vbb comparator 4.5 V

PORL_Vbb POR low level Vbb comparator 3 V

POR_Vbb_hyst Hysteresis of POR level Vbb comparator 100 mV

POR_Vbb_sl Maximum slope on Vbb to guarantee POR 50 V/ms

PORH_Vcc POR high level Vcc comparator 3 V

PORL_Vcc POR low level Vcc comparator 2 V

POR_Vcc_hyst Hysteresis of POR level Vcc comparator 100 mV

TSD

Tj Junction temperature For shutdown 165 195 °C

Tj_hyst Thermal shutdown hysteresis 9 18 °C

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

8.4 AC Characteristics

VBB = 7V to 18V; Tjunc = -40°C to +150°C; unless otherwise specified.

Table 11: AC Characteristics LIN Transmitter

Symbol Parameter Conditions Min. Typ. Max. Unit

Pin LIN

D1 Duty cycle 1 = tBUS_REC(min) / (2 x TBit)

THREC(min) = 0.284 x Vbb

THDOM(min) = 0.422 x Vbb

TBIT = 50µs

0.396

D2 Duty cycle 2 = tBUS_REC(max) / (2 x TBit)

THREC(max) = 0.744 x Vbb

THDOM(max) = 0.581 x Vbb

TBIT = 50µs

0.581

T_fall_norm LIN falling edge Normal slope mode; Vbb = 12V; L1, L2 (1) 22.5

µs

T_rise_norm LIN rising edge Normal slope mode; Vbb = 12V; L1, L2 (1) 22.5 µs

T_sym_norm LIN slope symmetry Normal slope mode; Vbb = 12V; L1, L2 (1) -4 4

µs

T_fall_norm LIN falling edge Normal slope mode; Vbb = 12V; L3 (1) 27 µs

T_rise_norm LIN rising edge Normal slope mode; Vbb = 12V; L3 (1) 27

µs

T_sym_norm LIN slope symmetry Normal slope mode; Vbb = 12V; L3 (1) -5 5 µs

T_fall_low LIN falling edge Low slope mode (2); Vbb = 12V; L3 (1) 62

µs

T_rise_low LIN rising edge Low slope mode (2); Vbb = 12V; L3 (1) 62 µs

T_wake Dominant time-out for wake-up via LIN bus 30 150 µs

T_dom TxD dominant time-out TxD = low 6 20 ms

Notes:

1. The AC parameters are specified for following RC loads on the LIN bus: L1 = 1kΩ / 1nF; L2 = 660Ω / 6.8nF; L3 = 500Ω / 10nF.

2. Low slope mode is not compliant to the LIN 1.3 or LIN 2.0 standard.

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

tBUS_dom(min)

LIN

THRec(max)

THRec(min)

THDom(max)

THDom(min)

tBUS_dom(max)

tBUS_rec(max)

tBUS_rec(min)

tBIT tBIT

50%

Thresholds of

receiving node 1

Thresholds of

receiving node 2

TxD

PC20060428.2

Figure 7: LIN Transmitter Duty Cycle

T_fall T_rise

LIN

60%

40%

60%

40%

PC20060428.1

100%

Figure 8: LIN Transmitter Rising and Falling Times

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

Table 12: AC Characteristics LIN Receiver

Symbol Parameter Conditions Min. Typ. Max. Unit

Pin LIN

Trec_prop_down Propagation delay of receiver falling edge 0.1 6 µs

Trec_prop_up Propagation delay of receiver rising edge 0.1 6 µs

Trec_sym Propagation delay symmetry Trec_prop_down - Trec_prop_up -2 2 µs

50%

trec_prop_up

RxD

LIN

Vbb

PC20060428.3

60% Vbb

40% Vbb

trec_prop_down

Figure 9: LIN Receiver Timing

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

9.0 Package Outline

SOIC-14: Plastic small outline; 14 leads; body width 150mil; JEDEC: MS-012 AMIS reference: SOIC150 14 150 G

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AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

10.0 Soldering

10.1 Introduction to Soldering Surface Mount Packages

This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in the AMIS “Data

Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). There is no soldering method that is ideal for

all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards (PCBs) with

high population densities. In these situations re-flow soldering is often used.

10.2 Re-flow Soldering

Re-flow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the PCB by

screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for re-flowing; for example,

infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200

seconds depending on heating method. Typical re-flow peak temperatures range from 215 to 260°C.

10.3 Wave Soldering

Conventional single wave soldering is not recommended for surface mount devices (SMDs) or PCBs with a high component density, as

solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was

specifically developed.

If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave.

• For packages with leads on two sides and a pitch (e):

o Larger than or equal to 1.27mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of

the PCB;

o Smaller than 1.27mm, the footprint longitudinal axis must be parallel to the transport direction of the PCB. The

footprint must incorporate solder thieves at the downstream end.

• For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the PCB. The footprint

must incorporate solder thieves downstream and at the side corners.

During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen

printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is four seconds

at 250°C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

10.4 Manual Soldering

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24V or less) soldering iron applied to the flat

part of the lead. Contact time must be limited to 10 seconds at up to 300°C.

When using a dedicated tool, all other leads can be soldered in one operation within two to five seconds between 270 and 320°C.

AMI Semiconductor – March 2007, M-20544-001

www.amis.com

AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

Table 13: Soldering Process

Package Soldering Method

Wave Re-flow (1)

BGA, SQFP Not suitable Suitable

HLQFP, HSQFP, HSOP, HTSSOP, SMS Not suitable (2) Suitable

PLCC (3), SO, SOJ Suitable Suitable

LQFP, QFP, TQFP Not recommended (3)(4) Suitable

SSOP, TSSOP, VSO Not recommended (5) Suitable

Notes:

1. All SMD packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package,

there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

dry pack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.

2. These packages are not suitable for wave soldering as a solder joint between the PCB and heat sink (at bottom version) can not be achieved, and as solder may

stick to the heat sink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder

thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8mm; it is definitely not suitable for packages with a

pitch (e) equal or smaller than 0.65mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65mm; it is definitely not suitable for packages with a

pitch (e) equal to or smaller than 0.5mm.

11.0 Revision History

Table 14: Revision History

Revision Date Format Description

1.0 28 April 2006 Preliminary Initial document

1.1 9 May 2006 Preliminary Updated absolute maximum ratings

1.2 23 June 2006 Preliminary  updated parameters – Vcc, WAKE, INH

 updated ESD and Schaffner requirements

 changed pinout

 updated description of wakeup functionality

 updated description of INH functionality

 updated soldering information according the green package requirements

1.3 8 August 2006 Preliminary  block diagram – serial diode added to the LIN pullup source to comply with the implementation

 application diagram – capacitor on WAKE placed in front of the serial resistance

 pin description – WAKE pin description corrected

1.4 13 December 2006 Preliminary  document footer: introduced revision number and date, introduced http link

 Vbb ranges for parameters aligned with the Key Technical Characteristics and the LIN protocol

requirements – 7-18V for LIN-related parameters, 5-26V for others

 Vbb for standby and sleepmode consumption limited to 5V-18V

 Vcc accuracy specified until 50mA in two accuracy ranges

 voltage on pin WAKE extended to –Vbb in Table 2 and Table 5

 par. 2.4: indicating 50mA current capability of Vcc

 I_out_max specified for 30mA and 50mA in Table 2

 Tjunc in Table 5 updated to 165°C

 Figure 4: clarified descriptions of the mode transitions to indicate edge-sensitivity on EN pin

 Figure 1 and Table 3: explicit picture and note about push-pull output on RxD output

 Figure 6: typing error correction in the figure title

 Delta_VH in Table 9: max limit corrected and typical value added

 specification of stabilization capacitors on Vcc added to Table 2 and par. 6.1.

 added max. threshold of thermal shutdown in Table 2 and Table 10

1.5 14 December 2006 Preliminary  corrected typing errors and wording in Figure 4

1.6 18 January 2007 Preliminary  changed negative maximum rating voltage on WAKE pin – see Table 2 and Table 5

1.7 6 March 2007 Preliminary  maximum rating of LIN and WAKE pins adopted to ±45V in Table 2 and Table 5

 corrected note 1 of Table 9 (regarding trimming for another application)

 package drawing updated by a better readable image (no content changes) in par. 9.0

 input/output levels of digital pins re-defined in terms of absolute voltage – see Table 9

 clarified statement on the indefinite short-protection in par. 2.2

AMI Semiconductor – March 2007, M-20544-001

www.amis.com

AMIS-40615 Data Sheet

LIN Transceiver with 3.3V Voltage Regulator

12.0 Company or Product Inquiries

For more information about AMI Semiconductor’s LIN transceivers, send an email to auto_assp@amis.com.

For more information about AMI Semiconductor’s products or services visit our Web site at http://www.amis.com.

Devices sold by AMIS are covered by the warranty and patent indemnification provisions appearing in its Terms of Sales only. AMIS makes no warranty, express, statutory,

implied or by description, regarding the information set forth herein or regarding the freedom of the described from patent infringement. AMIS makes no warranty of

merchantability or fitness for any purposes. AMIS reserves the right to discontinue production and change specifications and prices at any time and without notice. AMI

Semiconductor’s products are intended for use in commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high

reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recommended without additional processing by AMIS for such

AMI Semiconductor – March 2007, M-20544-001