PSS8550D - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation 2002 Nov 19

DISCRETE SEMICONDUCTORS

PSS8550

PNP medium power 25 V transistor

ook, halfpage

M3D186

2002 Nov 19 2

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

FEATURES

•High total power dissipation

•High current capability.

APPLICATIONS

•Medium power switching and muting

•Amplification

•Portable radio output amplifier (class-B, push-pull).

DESCRIPTION

PNP transistor in a SOT54 (TO-92) plastic package.

NPN complement: PSS8050.

MARKING

TYPE NUMBER MARKING CODE

PSS8550C S8550C

PSS8550D S8550D

PINNING

PIN DESCRIPTION

1 collector

2 base

3 emitter

handbook, halfpage

MSB033

Fig.1 Simplified outline (SOT54).

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −25 V

ICcollector current (DC) −1.5 A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed

conditions: pulse width tp≤1 s; duty cycle δ≤0.75%.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−40 V

VCEO collector-emitter voltage open base −−25 V

VEBO emitter-base voltage open collector −−6V

Ccollector current (DC) −−1.5 A

ICM peak collector current −−2A

Bbase current (DC) −−300 mA

IBM peak base current −−1A

tot total power dissipation Tamb ≤25 °C; note 1 −850 mW

Tamb ≤25 °C; note 2 −900 mW

Tamb ≤25 °C; note 3 −1W

stg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2002 Nov 19 3

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

Operated under pulsed conditions: pulse width tp≤1 s; duty cycle δ≤0.75%.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 147 K/W

in free air; note 2 139 K/W

in free air; note 3 125 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =−35 V; IE=0 −−−100 nA

VCB =−35 V; IE=0;

amb = 150 °C−−−50 µA

ICEO collector-emitter cut-off current VCE =−25 V; IB=0 −−−100 nA

IEBO emitter-base cut-off current VEB =−6 V; IC=0 −−−100 nA

hFE DC current gain IC=−5 mA; VCE =−1V 45 −−

=−800 mA; VCE =−1V 40 −−

DC current gain IC=−100 mA; VCE =−1V

PSS8550C 120 −200

PSS8550D 160 −300

VCEsat collector-emitter saturation voltage IC=−800 mA; IB=−80 mA −−190 −500 mV

VBEsat base-emitter saturation voltage IC=−800 mA; IB=−80 mA −−−1.2 V

VBEon base-emitter turn-on voltage IC=−10 mA; VCE =−1V −−−1V

Ttransition frequency IC=−50 mA; VCE =−10 V;

f = 100 MHz 100 −−MHz

Cccollector capacitance VCB =10V; I

E=i

e= 0; f = 1 MHz −−12 pF

2002 Nov 19 4

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

handbook, halfpage

400

100

200

300

MLD958

−10−1−1IC (mA)

hFE

−10 −102−103−104

(1)

(2)

(3)

Fig.2 DC current gain as a function of collector

current; typical values.

PSS8550C VCE =−1V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD959

−10−1−1−10 IC (mA)

VBE

(mV)

−103

−102−104

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

PSS8550C VCE =−1V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−10−1−1−10 −102−103− 104

−10

−102

−103

MLD960

IC (mA)

VCEsat

(mV)

(1)

(3)

(2)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

PSS8550C IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD962

−10−1−1−10 IC (mA)

VBEsat

(mV)

−103

−102−104

(1)

(2)

(3)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

PSS8550C IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2002 Nov 19 5

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

handbook, halfpage

MLD961

103

102

−10−1−1

RCEsat

(Ω)

IC (mA)

−10 −102−103−104

(1)

(3)

(2)

Fig.6 Equivalent on-resistance as a function of

collector current; typical values.

PSS8550C IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

0−0.5 −1VCE (V)

(A)

−2

−2.5

−2

−1.5

−1

−0.5

MLD963

(9)

(10)

(8)

(7)

(6)

(4)

(1)(2)(3)

(5)

Fig.7 Collector current as a function of

collector-emitter voltage; typical values.

PSS8550C

(1) IB=−100 mA.

(2) IB=−90 mA.

(3) IB=−80 mA.

(4) IB=−70 mA.

(5) IB=−60 mA.

(6) IB=−50 mA.

(7) IB=−40 mA.

(8) IB=−30 mA.

(9) IB=−20 mA.

(10) IB=−10 mA.

2002 Nov 19 6

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

handbook, halfpage

400

100

200

300

MLD964

−10−1−1IC (mA)

hFE

−10 −102−103−104

(1)

(2)

(3)

Fig.8 DC current gain as a function of collector

current; typical values.

PSS8550D VCE =−1V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD965

−10−1−1−10 IC (mA)

VBE

(mV)

−103

−102−104

(1)

(2)

(3)

Fig.9 Base-emitter voltage as a function of

collector current; typical values.

PSS8550D VCE =−1V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−10−1−1−10 −102−103− 104

−10

−102

−103

MLD966

IC (mA)

VCEsat

(mV)

(1)

(3)

(2)

Fig.10 Collector-emitter saturation voltage as a

function of collector current; typical values.

PSS8550D IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD968

−10−1−1−10 IC (mA)

VBEsat

(mV)

−103

−102−104

(1)

(2)

(3)

Fig.11 Base-emitter saturation voltage as a

function of collector current; typical values.

PSS8550D IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

2002 Nov 19 7

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

handbook, halfpage

MLD967

103

102

−10−1−1

RCEsat

(Ω)

IC (mA)

−10 −102−103−104

(1)

(3)

(2)

Fig.12 Equivalent on-resistance as a function of

collector current; typical values.

PSS8550D IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

0−0.5 −1VCE (V)

(A)

−2

−2.5

−2

−1.5

−1

−0.5

MLD969

(9)

(10)

(1)(2)(3)

(4)

(5)

(8)

(7)

(6)

Fig.13 Collector current as a function of

collector-emitter voltage; typical values.

PSS8550D

(1) IB=−100 mA.

(2) IB=−90 mA.

(3) IB=−80 mA.

(4) IB=−70 mA.

(5) IB=−60 mA.

(6) IB=−50 mA.

(7) IB=−40 mA.

(8) IB=−30 mA.

(9) IB=−20 mA.

(10) IB=−10 mA.

2002 Nov 19 8

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 5.2

5.0

0.48

0.40

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

(1)

2.5

0.66

0.56

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43 97-02-28

A L

0 2.5 5 mm

scale

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

2002 Nov 19 9

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

2002 Nov 19 10

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

NOTES

2002 Nov 19 11

Philips Semiconductors Product speciﬁcation

PNP medium power 25 V transistor PSS8550

NOTES

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Printed in The Netherlands 613514/01/pp12 Date of release: 2002 Nov 19 Document order number: 9397 750 10626