FDB060AN08A0_NL - Fairchild Semiconductor

November 2002

FDB060AN08A0 / FDP060AN08A0 Rev. A

FDB060AN08A0 / FDP060AN08A0

FDB060AN08A0 / FDP060AN 08A0

N-Channel PowerTrench® MOSFET

75V, 80A, 6.0mΩ

Features

•r

DS(ON) = 4.8mΩ (Typ .), VGS = 10 V, I D = 80 A

•Q

g(tot) = 73nC (Typ.), VGS = 10V

• Low Miller Charge

•Low Q

RR Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82680

Applications

• 42V Automotive Load C ont rol

• Starter / Alternator Systems

• Electr oni c Power Steering System s

• E le c tr on ic Valve Trai n Sys t e m s

• DC-DC converters and Off-line UP S

• Distribut ed Po wer Architectures and VRMs

• Pri ma ry Switch fo r 24V and 48 V syste ms

MOSFET Maximu m Ratings TC = 25°C unles s othe rwise no ted

Thermal Characteristics

Thi s produ ct has bee n desi gned to mee t the ex treme te st condi ti ons an d environme nt de mande d by the au tomot ive indust ry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, a ssembled and test ed under ISO9000 and QS9000 quality systems

certification.

Symbol Parameter Ratings Units

VDSS Drain to Sourc e Voltage 75 V

VGS Gate to Sourc e Vo lta ge ±20 V

Drain Cur rent 80 A

Continuous (TC < 127oC, VGS = 1 0 V)

Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) 16 A

Pulsed Figure 4 A

EAS Single Pulse Av alanche Energ y (Note 1) 350 mJ

PDPow er dissipation 255 W

Derate above 25oC1.7W/

TJ, TSTG Operating and Storage Temperature -55 to 175 oC

RθJC Thermal Resistance Junction to Case TO-220,TO-263 0.58 oC/W

RθJA Thermal R esistance Junction to Ambient TO- 220 ,TO-2 63 (Note 2) 62 oC/W

RθJA Thermal R esistance Ju ncti on t o Ambien t TO-263, 1in2 co pper pad area 43 oC/W

TO-263AB

FDB SERIES

GATE

SOURCE DRAIN

(FLANGE)

TO-220AB

FDP SERIES

DRAIN

GATE

SOURCE

(FLANGE)

FDB060AN08A0 / FDP060AN08A0

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

Off Characteri stics

On Characteristics

Dynamic Characteristic s

Switching Characteri stics (VGS = 10V )

Drain-Source Diode Character istics

Notes:

1: Starting TJ = 25°C, L = 109µH, IAS = 80A.

2: Pulse width = 100s

Device Marking Device Package Reel Size Tape Width Quantity

FDB060AN08A0 FDB060AN08A0 T O-263AB 330mm 24mm 800 units

FDP060AN08A0 FDP 060AN08A0 TO-220AB Tube N/A 50 units

Symbol Paramet er Tes t Conditions Min Typ Max Units

BVDSS Drain to S ou rc e B rea k dow n Vo lt ag e I D = 250µA, VGS = 0V 75 - - V

IDSS Zero Gate Voltage Drain Current VDS = 60V - - 1 µA

VGS = 0V TC = 150oC- -250

IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA

VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

rDS(ON) D r ai n to S ou r c e On Re si stan ce

ID = 80A, VGS = 10V - 0.0048 0.006

Ω

ID = 40A, VGS = 6V - 0.0066 0.010

ID = 80A, VGS = 10V,

TJ = 1 75 oC- 0.010 0.013

CISS Input Capacitance VDS = 25V, VGS = 0 V,

f = 1MHz

- 5150 - pF

COSS Out put Capacitance - 800 - pF

CRSS Reverse Transfer Capacitance - 230 - pF

Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10 V

VDD = 40V

ID = 80A

Ig = 1.0mA

73 95 nC

Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 10 13 nC

Qgs Ga te to Sourc e Gate Charg e - 29 - nC

Qgs2 Gate Charge Threshold to Plateau - 19 - nC

Qgd Gate to Drain “Miller” Charge - 16 - nC

tON Turn-On Time

VDD = 40V, ID = 80 A

VGS = 10V, RGS = 3.9Ω

--147ns

td(ON) Turn-On Dela y Time - 19 - ns

trRise Time - 79 - ns

td(OFF) Turn-Off Delay Time - 37 - ns

tfFall Time - 38 - ns

tOFF Turn-Off Time - - 113 ns

VSD Source to Drain Diode Voltage ISD = 80 A - - 1.2 5 V

ISD = 40A - - 1.0 V

trr Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -37ns

QRR Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -38nC

FDB060AN08A0 / FDP060AN08A0

Typical Characteristics TC = 25°C un less otherwis e noted

Figure 1. Normalized Power Dissipati on vs

Ambient Temperature Figure 2. Maxi mum Continuous Drai n Current vs

Case Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

00255075100 175

0.2

0.4

0.6

0.8

1.0

1.2

125 150 0

100

125

150

25 50 75 100 125 150 175

ID, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

CURRENT LIMITED

BY PACKAGE

0.1

10-5 10-4 10-3 10-2 10-1 100101

0.01

t, RECTANGULAR PULSE DURATION (s)

ZθJC, NORMALIZED

THERMAL IMPEDANCE

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

PDM

t1t2

0.5

0.2

0.1

0.05

0.01

0.02

DUTY CYCLE - DESCENDING ORDER

SINGLE PULSE

100

1000

2000

IDM, PEAK CURRENT (A)

t, PULSE WIDTH (s)

10-5 10-4 10-3 10-2 10-1 100101

TC = 25oC

I = I25 175 - TC

150

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

VGS = 10V

FDB060AN08A0 / FDP060AN08A0

Figure 5. Forward Bi as Safe Oper ati ng Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 7. Transfer Charact eristic s Figure 8. Saturation Chara cteristics

Figur e 9 . Dr ain t o So urce On Resis tance v s Dr ain

Current Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Typical Characteristics TC = 25°C un less otherwis e noted

0.1

100

1000

110100

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

TJ = MAX RATED

TC = 25oC

SINGLE PULSE

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

10µs

1ms

100µs

10ms

100

0.01 0.1 1 10 100

500

IAS, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

START I NG TJ = 150oC

tAV = (L)( IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R ≠ 0

tAV = (L/R)ln[(IAS*R )/(1.3*RATED BVDSS - VDD) +1]

100

125

150

175

3.5 4.0 4.5 5.0 5.5 6.0

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

TJ = 175oC

TJ = 25oC TJ = -55oC

100

125

150

175

0 0.5 1.0 1.5 2.0

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 6V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = 5V

TC = 25oC

VGS = 10V VGS = 7V

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

0 20406080

ID, DRAIN CURRENT (A)

VGS = 6V

VGS = 10V

DRAIN TO SOURCE ON RESISTANCE(mΩ)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

0.5

1.0

1.5

2.0

2.5

-80 -40 0 40 80 120 160 200

NORMALIZED DRAIN TO SOURCE

TJ, JUNCTION TEMPERATURE (oC)

ON RESISTANCE

VGS = 10V, ID = 80A

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

FDB060AN08A0 / FDP060AN08A0

Figur e 11. Norma lized Gat e Threshold Voltage vs

Junction Temperature Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

Figure 13. Capacitance vs Drain to Source

Voltage Figure 1 4. Gate Charge Waveforms for Constant

Gate Current

Typical Characteristics TC = 25°C un less otherwis e noted

0.4

0.6

0.8

1.0

1.2

-80 -40 0 40 80 120 160 200

VGS = VDS, ID = 250µA

NORMALIZED GATE

TJ, JUNCTION TEMPERATURE (oC)

THRESHOLD VOLTAGE

0.9

1.0

1.1

1.2

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

ID = 250µA

BREAKDOWN VOLTAGE

100

1000

0.1 1 10

7000

C, CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAG E ( V)

VGS = 0V, f = 1MHz

CISS = CGS + CGD

COSS ≅ CDS + CGD

CRSS = CGD

0 20406080

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 40V

ID = 80A

ID = 16A

WAVEFORMS IN

DESCENDING ORDER:

FDB060AN08A0 / FDP060AN08A0

Test Circuits and Waveforms

Figure 15. Unclamped Energy Test Circuit Figure 1 6. Unclamped Energy Waveform s

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms

Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS +

VDS

VDD

DUT

Ig(REF)

VDD

Qg(TH)

VGS = 2V

Qgs2

Qg(TOT)

VGS = 10V

VDS VGS

Ig(REF)

Qgs Qgd

VGS

RGS

DUT

-VDD

VDS

VGS

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%50%

10% PULSE WI DT H

VGS

FDB060AN08A0 / FDP060AN08A0

Thermal Resistance vs. Mounting Pad Area

The maximum rated junction temperature, TJM, and the

thermal resistance of the heat dissipating path determines

the maximum allowable device power dissipation, PDM, in an

application. Therefore the application’s ambient

temperature, TA (oC), and thermal resistance RθJA (oC/W)

must be reviewed to ensure that TJM is never exceeded.

Equation 1 mathematically represents the relationship and

s erves as the basis for establishing the rating of the part.

In using surface mount devices such as the TO-263

package, the environment in which it is applied will have a

significant influence on the part’s current and maximum

power dissipation ratings. Precise determination of PDM is

c omple x and influenced by many factors:

1. Mou nti ng pad area onto which t he device i s at tach ed and

wh ethe r the re is copp er on on e si de or b oth si de s of the

board.

2. The number of copper layers and the thickness of the

board.

3. The use of exte rnal heat sinks.

4. The use of thermal vias.

5. Air flow and board orientation.

6. For non steady state applications, the pulse width, the

duty cycle and the transien t thermal respon se of the part,

the boa rd and the envir onment they are in.

Fairchild provides thermal information to assist the

designer’s preliminary application evaluation. Figure 21

defines the RθJA for the device as a function of the top

copper (component side) area. This is for a horizontally

position ed FR -4 board with 1 oz c opp er af t er 100 0 sec on ds

of stea dy st ate powe r w ith n o air flow . Th is gr aph prov ides

the ne cessa ry i nformation for calc ulat ion of th e st eady state

junction temperature or power dissipation. Pulse

applications can be evaluated using the Fairchild device

Spice thermal model or manually utilizing the normalized

maximum transient thermal impedance curve.

Thermal resistances corresponding to other copper areas

can be obtained from Figure 21 or by calculation using

Equation 2 or 3. Equation 2 is used for copper area defined

in in ches square and equation 3 is for area in centimet ers

square. The area, in square inches or square centimeters is

the top copp er area including the ga te and source pads.

(EQ. 1)

PDM

TJM TA

–()

RθJA

-----------------------------=

Area in Inches Squared

(EQ. 2)

RθJA 26.51 19.84

0.262 Area+()

-------------------------------------+

(EQ. 3)

RθJA 26.51 128

1.69 Area+()

----------------------------------+

Area in Centimeters Squared

Figure 21. Thermal Resistance vs Mounting

Pad Area

1100.1

RθJA = 26.51+ 19.84/(0.262+Area) EQ.2

RθJA (oC/W)

AREA, TOP COPPER AREA in2 (cm2)

(0.645) (6.45) (64.5)

RθJA = 26.51+ 128/(1.69+Area) EQ.3

FDB060AN08A0 / FDP060AN08A0

PSPICE Electr ical Model

.SU BC K T F DP060AN08A0 2 1 3 ; rev October 200 2

Ca 1 2 8 2. 5e-9

Cb 1 5 14 2. 1e-9

Cin 6 8 4.7e-9

D bo dy 7 5 Db ody M OD

Dbreak 5 11 D break MOD

Dplc ap 10 5 Dplcap M O D

Ebreak 11 7 17 18 82.1

Ed s 14 8 5 8 1

Eg s 13 8 6 8 1

Esg 6 10 6 8 1

Evthres 6 21 19 8 1

Evtem p 20 6 18 22 1

It 8 17 1

Lgate 1 9 5. 3e- 9

Ldrai n 2 5 1.0e -9

Ls o urce 3 7 5e - 9

RLgate 1 9 53

R Ld rain 2 5 10

RLsourc e 3 7 50

Mm e d 16 6 8 8 Mm edMOD

Mstro 16 6 8 8 MstroM OD

Mwe ak 16 21 8 8 MweakMO D

Rbreak 17 18 Rbreak M O D 1

Rdrain 50 16 RdrainMOD 9e-4

Rgate 9 20 1.4

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

Rsource 8 7 RsourceMOD 3e-3

Rvthre s 22 8 RvthresMOD 1

Rvtemp 18 19 RvtempMOD 1

S1a 6 12 13 8 S1AMOD

S1b 13 12 13 8 S1B M OD

S2a 6 15 14 13 S2A M OD

S2b 13 15 14 13 S2B M OD

Vbat 22 19 DC 1

ESL C 51 50 VALUE = {(V(5,5 1)/AB S(V(5, 51)))*(PWR(V (5,51 )/ (1e-6*350),5))}

.MODEL DbodyMOD D (IS=2E-11 N=1.04 RS=1.76e-3 TRS1=2.7e-3 TRS2=1e-6

+ CJO=3. 2e-9 M= 5.6e-1 TT= 3e-10 XT I=3.9)

.MO DE L DbreakMOD D (RS=3e-1 TRS 1=1e-3 TRS2=-8.9e-6)

.MODEL DplcapMOD D (CJO=1.56e-9 IS=1e-30 N=10 M=0.53)

.MODEL MmedMOD NMOS (VTO=3.6 KP=6 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.4)

.MO DE L Mst roMOD NMOS (VTO=4.22 K P = 220 IS=1e -30 N=10 T OX = 1 L=1u W=1u )

.MODEL MweakMOD NMOS (VTO=3 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=14 RS=0.1)

.MODEL RbreakMOD RES (TC1=9.4e-4 TC2=-9e-7)

.MO DE L RdrainMOD RES (TC1=2. 2e-2 TC2=6e -5)

.MODEL RSLCMOD RES (TC1=2e-3 TC2=1e-5)

.MO DE L Rsou rceMOD RES (TC1=1e-3 TC 2=1e-6 )

.MO DEL Rvthre sM OD RE S (T C1=-6e-3 TC2=-1 .6e-5 )

.MO DE L Rvte m pM OD RE S (T C1=-2. 4e-3 TC2=1e -6)

.M ODEL S1AMOD VSWITC H (RON= 1e- 5 ROFF =0. 1 VON=- 8 VOF F=-5 )

.M ODEL S1BMOD VSWITC H (RON= 1e- 5 ROFF =0. 1 VON=- 5 VOF F=-8 )

.M ODEL S2AMOD VSWITC H (RON= 1e- 5 ROFF = 0.1 VON= - 4 VOFF =-3 .5 )

.M ODEL S2BMOD VSWITC H (RON= 1e- 5 ROFF =0. 1 VON=- 3. 5 VOF F=-4 )

.ENDS

Note: For further discussion of the PSPICE model, consult A N ew PSPICE Sub-Circuit for the Power MOSFET Featuring G lobal

Temperature Options; IE EE P ower E le ct ronics Spec i a l i st Conference Records, 1991, wri tten by William J. Hepp and C. F rank

Wheatley.

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

FDB060AN08A0 / FDP060AN08A0

SABER Electrical Model

rev October 2002

tem pl ate FDP060AN08A 0 n2,n1 ,n 3

electrical n2,n1,n3

{

var i iscl

dp..model dbodymod = (isl=2e-11,nl=1.04,rs=1.76e-3,trs1=2.7e-3,trs2=1e-6,cjo=3.2e-9,m=5.6e-1,tt=3e-10,xti=3.9)

dp.. m odel dbreakmo d = (rs=3e -1, trs1=1e-3 ,t rs 2=-8. 9e-6)

dp..model dplcapmod = (cjo=1.56e-9,isl=10e-30,nl=10,m=0.53)

m..model mmedmod = (type=_n,vto=3.6,kp=6,is=1e-30, tox=1)

m..model mstrongmod = (type=_n,vto=4.22,kp=220,is=1e-30, tox=1)

m..model mweakmod = (type=_n,vto=3,kp=0.03,is=1e-30, tox=1,rs=0.1)

sw_v cs p..mo del s1amod = (ron= 1e-5,roff=0. 1,von=-8,vof f=-5 )

sw_v cs p..mo del s1bmod = (ron= 1e-5,roff=0. 1,von=-5,vof f=-8 )

sw_v cs p..mo del s2amod = (ron= 1e-5,roff=0. 1,von=-4,vof f=-3 .5)

sw_v cs p..mo del s2bmod = (ron= 1e-5,roff=0. 1,von=-3.5,voff =-4)

c . ca n1 2 n8 = 2. 5e- 9

c.cb n15 n14 = 2. 1e-9

c.c in n6 n8 = 4.7e -9

dp.dbody n7 n5 = model =dbody m od

dp.dbrea k n5 n11 = model=dbr eakmod

dp.dplca p n10 n5 = model =dplcapmod

spe. ebreak n11 n7 n17 n1 8 = 82.1

spe. eds n14 n8 n5 n8 = 1

spe. egs n13 n8 n6 n8 = 1

spe. esg n6 n10 n6 n8 = 1

spe.evthres n6 n21 n19 n8 = 1

spe. evtemp n20 n6 n18 n2 2 = 1

i.it n8 n17 = 1

l.lg ate n1 n9 = 5.3e-9

l.ldrain n2 n5 = 1.0e-9

l.lsource n3 n7 = 5e-9

res. rl gate n1 n9 = 53

res. rl drain n2 n5 = 10

res. rl sour ce n3 n7 = 50

m.mmed n16 n6 n8 n8 = m odel=m m edmod, l=1u, w=1u

m.ms t rong n16 n6 n8 n8 = mod el = m strongmod, l= 1u, w=1u

m.mw eak n16 n21 n8 n8 = model=m wea kmod, l=1u, w=1u

res. rbreak n17 n18 = 1, tc1 = 9. 4e-4,tc 2=-9e-7

res. rdrain n50 n16 = 9e-4, tc1=2 .2e-2 ,tc2=6e -5

r e s .rg ate n9 n20 = 1.4

res. rslc1 n5 n51 = 1e-6, tc1 =2e-3,tc2= 1e-5

res. rslc2 n5 n50 = 1e3

res. rsour ce n8 n7 = 3e-3 , tc1=1e- 3,tc2=1e- 6

res. rvthres n22 n8 = 1, tc1=-6e- 3,tc2=-1.6e-5

res.rvtemp n18 n19 = 1, tc1=-2.4e-3,tc2=1e-6

sw_v cs p.s1a n6 n12 n13 n8 = mo del =s1a m od

sw_v cs p.s1b n13 n12 n1 3 n8 = model = s1 bmod

sw_v cs p.s2a n6 n15 n14 n13 = mode l = s2 amod

sw_v cs p.s2b n13 n15 n1 4 n13 = model = s 2bmod

v.vbat n22 n19 = dc =1

equations {

i (n51->n50) +=iscl

iscl : v (n51, n50) = ((v(n5, n51)/(1e-9+abs(v(n5 ,n51))))*((abs(v(n5 ,n51)* 1e6/ 350))** 5))

}

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK

DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ISCL

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

FDB060AN08A0 / FDP060AN08A0

PSPICE Thermal Model

REV 23 October 2002

FDP060AN08A0T

CTHERM1 TH 6 9.6e-3

CTH ERM2 6 5 9. 7e-3

CTH ERM3 5 4 9. 8e-3

CTH ERM4 4 3 1e-2

CTH ERM5 3 2 3e-2

CTH ERM6 2 TL 9e-2

RTHERM1 TH 6 3.2e-3

RTH ERM2 6 5 8. 1e-3

RTH ERM3 5 4 2. 3e-2

RTH ERM4 4 3 1. 2e-1

RTH ERM5 3 2 1. 5e-1

RTH ERM6 2 TL 1.6e -1

SABER Thermal Mod el

SABE R t hermal m odel F DP060A N08A0T

template thermal_model th tl

the r m al_ c th , tl

{

cth er m.ctherm 1 th 6 =9.6e -3

ctherm.ctherm2 6 5 =9.7e-3

ctherm.ctherm3 5 4 =9.8e-3

cthe rm .ctherm4 4 3 =1e-2

cthe rm .ctherm5 3 2 =3e-2

ctherm.ctherm6 2 tl =9e-2

rtherm.r th erm 1 th 6 =3 .2e-3

r the rm .rthe rm2 6 5 =8.1 e-3

r the rm .rthe rm3 5 4 =2.3 e-2

r the rm .rthe rm4 4 3 =1.2 e-1

r the rm .rthe rm5 3 2 =1.5 e-1

r the rm .rt her m 6 2 t l =1 . 6 e-1

}

RTHERM4

RTHERM6

RTHERM5

RTHERM3

RTHERM2

RTHERM1

CTHERM4

CTHERM6

CTHERM5

CTHERM3

CTHERM2

CTHERM1

th JUNCTION

CASE

Rev. I1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconduct or owns or is aut horized t o use and is not

intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

wh ich, (a) ar e int ende d fo r s urgic al i mpla nt into the body ,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A c r it ic al c om pon en t i s an y c om po ne nt o f a l if e s upp or t

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Defini ti on of Terms

ACEx™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

FACT Quiet Series™

FAST®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

ImpliedDisconnect™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerTrench®

QFET™

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

SILENT SWITCHER®

SMART START™

SPM™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

TruTranslation™

UHC™

UltraFET®

VCX™

A cross the board. Around the world.™

T he Po wer Franchise™

P rogrammable Acti ve Droop™

Datasheet Identification Product Status Definition

Adva nce Information Formative or In

Design This datasheet cont ains the design specific atio ns for

product development. Specifications may change in

any manner without notice.

Prelimin ary F irs t Productio n This dat asheet contains preliminary data , and

supplementary data will be pub lished at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without no tice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor re serves the right t o make changes at

any time without notice in order to improve design.

Obsolete Not In P roduction This data s heet cont ains specif ications on a product

that has been disco nti nued by Fairchild semiconductor .

The datasheet is printed for reference inf ormation only.