SMMBT5551LT3G - ON SEMICONDUCTOR

October, 2016 − Rev. 12

1Publication Order Number:

MMBT5550LT1/D

MMBT5550L, MMBT5551L

High Voltage Transistors

NPN Silicon

Features

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MMBT5550

MMBT5551

VCEO 140

160

Vdc

Collector−Base Voltage

MMBT5550

MMBT5551

VCBO 160

180

Vdc

Emitter−Base Voltage VEBO 6.0 Vdc

Collector Current − Continuous IC600 mAdc

Electrostatic Discharge

Human Body Model

Machine Model

ESD

> 8000

> 400

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) @TA = 25°C

Derate Above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate (Note 2) @TA = 25°C

Derate Above 25°C

PD300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

MARKING

DIAGRAM

COLLECTOR

BASE

EMITTER

www.onsemi.com

x1x M G

SOT−23 (TO−236)

CASE 318

STYLE 6

Device Package Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT5550LT1G SOT−23

(Pb−Free)

3,000 / Tape &

Reel

MMBT5551LT1G SOT−23

(Pb−Free)

3,000 / Tape &

Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

x1x = Device Code

M1F = MMBT5550LT

G1 = MMBT5551LT

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

SMMBT5551LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBT5551LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

SMMBT5551LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

MMBT5550LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

MMBT5550L, MMBT5551L

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0) MMBT5550

MMBT5551

V(BR)CEO 140

160

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) MMBT5550

MMBT5551

V(BR)CBO 160

180

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO 6.0 −

Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0) MMBT5550

(VCB = 120 Vdc, IE = 0) MMBT5551

(VCB = 100 Vdc, IE = 0, TA = 100°C) MMBT5550

(VCB = 120 Vdc, IE = 0, TA = 100°C) MMBT5551

ICBO

−

100

nAdc

mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

−50

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5550

MMBT5551

(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5550

MMBT5551

(IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550

MMBT5551

hFE 60

−

250

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) Both Types

(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550

MMBT5551

VCE(sat)

−

0.15

0.25

0.20

Vdc

Base −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) Both Types

(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550

MMBT5551

VBE(sat)

−

1.0

1.2

1.0

Vdc

Collector Emitter Cut−off

(VCB = 10 V) Both Types

(VCB = 75 V)

ICES

−

100

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

MMBT5550L, MMBT5551L

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

500

h , DC CURRENT GAIN

TJ = 125°C

-55°C

25°C

5.0

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

200

300

100

7.0

VCE = 1.0 V

VCE = 5.0 V

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

IC = 1.0 mA

0.3

0.005 0.01 0.2 0.5 1.0 2.0 20 50

0.8

0.5

0.4

0.9

0.7

0.6

0.2

0.02 0.05 0.1 10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

10 mA 30 mA 100 mA

5.0

Figure 3. Collector Cut−Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

101

10-5

0.4 0.3 0.1

100

10-1

10-2

10-3

10-4

0.2 0 0.1 0.2 0.40.3 0.60.5

VCE = 30 V

TJ = 125°C

75°C

25°C

IC = ICES

, COLLECTOR CURRENT (A)μIC

REVERSE FORWARD

IC, COLLECTOR CURRENT (A)

0.30

0.001 0.01 0.1

150°C

IC/IB = 10

0.0001

Figure 4. VCE(sat)

0.25

0.20

0.10

0.05

VCE(sat), Coll-Emitt Saturation Voltage (V)

0.15

25°C

-55°C

MMBT5550L, MMBT5551L

www.onsemi.com

TYPICAL CHARACTERISTICS

IC, COLLECTOR CURRENT (A)

1.10

0.001 0.01 0.1

150°C

IC/IB = 10

0.0001

Figure 5. VBE(sat)

0.70

0.60

0.40

0.30

0.20

VBE(sat), Base-Emitt Saturation Voltage (V)

0.50

25°C

-55°C

0.80

0.90

1.00

IC, COLLECTOR CURRENT (A)

1.10

0.001 0.01 0.1

150°C

VCE = 10 V

0.0001

Figure 6. VBE(on)

0.70

0.60

0.40

0.30

0.20

VBE(on), Base-Emitter Voltage (V)

0.50

25°C

-55°C

0.80

0.90

1.00

IC, COLLECTOR CURRENT (mA)

2.5

qVC for VCE(sat)

qVB for VBE(sat)

Figure 7. Temperature Coefficients

TJ = - 55°C to +135°C

V, TEMPERATURE COEFFICIENT (mV/ C)°θ

2.0

1.5

1.0

0.5

- 0.5

- 1.0

- 1.5

- 2.0

- 2.5

1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3

C, CAPACITANCE (pF)

VR, REVERSE VOLTAGE (VOLTS)

100

1.0

0.2 0.5 1.0 2.0 5.0 10 20

Cibo

7.0

5.0

3.0

2.0

0.3 0.7 3.0 7.0

Cobo

TJ = 25°C

Figure 8. Capacitances

10.2 V

Vin

10 ms

INPUT PULSE

VBB

-8.8 V

100

5.1 k

0.25 mF

Vin 100 1N914

Vout

VCC

30 V

3.0 k

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

Values Shown are for IC @ 10 mA

Figure 9. Switching Time Test Circuit

MMBT5550L, MMBT5551L

www.onsemi.com

TYPICAL CHARACTERISTICS

IC, COLLECTOR CURRENT (mA)

1000

1.0 100.1

100

100 1000

VCE = 1 V

TA = 25°C

Figure 10. Current Gain Bandwidth Product

fT, Current Gain Bandwidth Product (Mhz)

VCE, COLLECTOR EMITTER VOLTAGE (V)

1.0 10

0.001

0.01

0.1

100 1000

10 mS

Figure 11. Safe Operating Area

IC, COLLECTOR CURRENT (A)

1.0 S

C, CAPACITANCE (pF)

VR, REVERSE VOLTAGE (VOLTS)

100

1.0

0.2 0.5 1.0 2.0 5.0 10 20

Cibo

7.0

5.0

3.0

2.0

0.3 0.7 3.0 7.0

Cobo

TJ = 25°C

IC, COLLECTOR CURRENT (mA)

1000

0.3 1.0 10 20 30 50

0.50.2

t, TIME (ns)

100

200

300

500

2.0 100 200

IC/IB = 10

TJ = 25°C

tr @ VCC = 120 V

3.0 5.0

tr @ VCC = 30 V

td @ VEB(off) = 1.0 V

VCC = 120 V

Figure 12. Capacitances Figure 13. Turn−On Time

MMBT5550L, MMBT5551L

www.onsemi.com

PACKAGE DIMENSIONS

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.027

0−−− 10 0 −−− 10

T____

TOP VIEW

SIDE VIEW

END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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