2SD2414(SM) - Toshiba

2SD2414(SM)

2009-11-11

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD2414(SM)

High Current Switching Applications

Power Amplifier Applications

• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A)

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-10S2A

Weight: 1.4 g (typ.)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 100 V

Collector-emitter voltage VCEO 80 V

Emitter-base voltage VEBO 5 V

Collector current IC 7 A

Base current IB 1 A

Ta = 25°C 1.5

Collector power

dissipation Tc = 25°C

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

2SD2414(SM)

2009-11-11

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO V

CB = 100 V, IE = 0 A ― ― 5 μA

Emitter cut-off current IEBO V

EB = 5 V, IC = 0 A ― ― 5 μA

Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 A 80 ― ― V

hFE (1) V

CE = 1 V, IC = 1 A 100 ― 320

DC current gain

hFE (2) V

CE = 1 V, IC = 4 A 30 ― ―

Collector-emitter saturation voltage VCE (sat) IC = 4 A, IB = 0.4 A ― 0.25 0.5 V

Base-emitter saturation voltage VBE (sat) I

C = 4 A, IB = 0.4 A ― 0.9 1.4 V

Transition frequency fT V

CE = 4 V, IC = 1 A ― 10 ― MHz

Collector output capacitance Cob V

CB = 10 V, IE = 0 A, f = 1 MHz ― 200 ― pF

Turn-on time ton ― 0.4 ―

Storage time tstg ― 2.5 ―

Switching time

Fall time tf

IB1 = −IB2 = 0.3 A, duty cycle ≤ 1%

― 0.5 ―

μs

Marking

Note: A line under a Lot No. identifies the indication of product Labels

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the

restriction of the use of certain hazardous substances in electrical and electronic equipment.

Lot No.

Note

D2414

Part No.

(

or abbreviation code

)

IB1

20 μs

VCC ≈ 30 V

Output

10 Ω

IB2

IB1

Input

IB2

2SD2414(SM)

2009-11-11

Collector-emitter voltage VCE (V)

IC – VCE

Collector current IC (A)

VCE – IC

Collector-emitter voltage VCE (V)

Collector current IC (A)

VCE – IC

Collector-emitter voltage VCE (V)

Collector current IC (A)

Collector-emitter voltage VCE (V)

Collector current IC (A)

hFE – IC

DC current gain hFE

Collector current IC (A)

VCE (sat) – IC

Collector-emitter saturation voltage

VCE (sat) (V)

VCE – IC

1.2

0.8

0.6

0.4

0.2

1 2 3 4 5 6

Common emitter

Tc = 25°C

IB = 30 mA

1.0

10060

500

600

700

150 200 300 400

0.02

Tc = 100°C

0.1 0.3 1

0.3

0.5

Common emitter

IC/IB = 10

−55

0.05

0.1

3 10

Common emitter

VCE = 1 V

0.1 0.03 0.3 1 3

500

300

Tc = 100°C

100

−55

1.2

0.8

0.6

0.4

0.2

1 2 3 4 5 6

Common emitter

Tc = 100°C

IB = 20 mA

1.0

100

200

300

400

500

600

700

1.2

0.8

0.6

0.4

0.2

1 2 3 4 5 6

Common emitter

Tc = −55°C

IB = 30 mA

1.0

60 100

150 200 300 400

500

600 700

Common emitter

Tc = 25°C

IB = 10 mA

2 4 6 8 10

160

100 80

2SD2414(SM)

2009-11-11

Base-emitter voltage VBE (V)

IC – VBE

Collector current IC (A)

Collector-emitter voltage VCE (V)

Safe Operating Area

Collector current IC (A)

VBE (sat) – IC

Base-emitter saturation voltage

VBE (sat) (V)

0.1

0.02 0.3 1 3

Tc = −55°C

Common emitter

IC/IB = 10

100

0.1

0.5

0.3

0.8 1.2 1.6 2.0 0.4

Common emitter

VCE = 1 V

Tc = 100°C

−55

0.1

1 5 30 50 100

0.3

0.5

*: Single nonrepetitive pulse

Tc = 2 5 ° C

Curves must be derated linearly with

increase in temperature.

IC max

(continuous)

IC max (pulsed)*

VCEO max

DC operation

Tc = 25°C

1 ms*

10 ms*

100 ms*

2SD2414(SM)

2009-11-11

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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware,

software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of

human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create

designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply

with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications,

the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor

Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are

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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of

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controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or

losses occurring as a result of noncompliance with applicable laws and regulations.