ALPHANUMERIC INDEX CROSS-REFERENCE (Continued) Motorola Motorola Motorola Motorola industry Direct Similar Page Industry Direct Similar Page Part Number Replacement Replacement Number Part Number Replacement Replacement Number 2N5068 2N5758 3-116 2N5349 2N5339 3-97 2N6069 2N5758 3-116 2N5384 2N6191 3-158 2N5083 2N5339 3-97 2N5385 2N6191 3-168 2N5084 2N5339 3-97 2N5386 2N5038 3-83 2N5085 2N5339 3-97 2N5387 2N6546 3-225 2N5147 2N6191 3-158 2N5388 2N6546 3-225 2N5148 2N5337 3-97 2N5389 2N6546 3-225 2N5149 2N6191 3-158 2N5404 2N6191 3-158 2N5150 2N5337 3-97 2N5405 2N6191 3-158 2N5151 2N6191 3-158 2N5406 2N6191 3-158 2N5152 2N6337 3-97 2N5407 2N6193 3-158 2N5153 2N6191 3-158 2N5408 2N6191 3-158 2N5154 2N5337 3-97 2N5403 2N6193 3-158 2N5157 2N6545 3-221 2N5410 2N6191 3-158 2N5190 2N5190 3-85 2N5411 2N6193 3-158 2N5191 2N5197 3-85 2N5427 2N5428 3-101 2N5192 2N5192 3-85 2N5428 2NS428 3-101 2N5193 2N5193 3-89 2N5429 2N5429 3-101 2N5194 2N5194 3-89 2N5430 2N5430 3-101 2N5195 2N5195 3-89 2N5466 2N6545 3-221 2N5202 2N5428 3-101 2N5467 2N6545 3-221 2N6239 2N6306 3-181 2NS477 2N5339 3-97 2N5240 2N6545 3-221 2N5478 2N5339 3-97 2N5241 2N3902 3-60 2N5479 2N5339 3-97 2N5264 2N6249 3-164 2N5480 2N5339 3-97 2N5284 2N5339 3-97 2N5490 MJE3055T 3-904 2N5285 2N5339 3-97 2N5491 MJE3055T 3-904 2N5286 2N6191 3-158 2N5492 2N6292 3-151 2N5287 2N6191 3-158 2N5493 2N6292 3-151 2N5293 2N6123 3-154 2N5494 MJE3055T 3-904 2N5294 2N6123 3-454 2N5495 MJE3055T 3-904 2N5295 2N6121 3-154 2N5496 2N6292 3-151 2N5296 2N6121 3-154 2N5497 2N6292 3-151 2N5297 2N6122 3-154 2N5508 2N5428 3-101 2NS298 2N6422 3-154 2N5539 2N6379 3-191 2N5301 2N5301 3-93 2N5559 MJ15001 3-710 2N5302 2N5302 3-93 2N5575 2N5685 3-112 2N5302JAN 2N5302JAN 3-93 2N5578 2N5685 3-112 2N5302JTX 2N5302JTX 3-93 2N5598 2N5428 3-101 2N5302JTXV 2N5302JTXV 3-93 2N5600 2N5428 3-101 2N5303 2N5303 3-93 2N5602 2N5428 3-101 2N5303JAN 2N5303JAN 3-93 2N5604 2N5430 3-101 2N5303JTX 2N5303JTX 3-93 2N5606 2N5428 3-101 2N5303STXV IN5303STXV 3-93 2N5610 2N5428 3-101 2N5325 2N5339 3-97 2N5612 2N5430 3-101 2N5333 2N6303 3-32 2N5614 2N3448 3-18 2N5334 2N6337 3-97 2N5616 2N3448 3-18 2N5335 2N5337 3-97 2N5618 2N3448 3-18 2N5336 2N5336 3.97 2N5629 2N5629 3-105 2N5337 2N5337 3-97 2N5630 2N5630 3-105 2N5338 2N5338 3-97 2N5631 2N5631 3-105 2N5339 2N5339 3-97 2N5632 2N5882 3-123 2N5339AN 2N5339JAN 3-97 2N5633 MJ15001 3710 2N5339JTX 2N5339JTX 3-97 2N5634 MJ15001 3-710 2NS5339JTXY 2N5339TXV 3-97 2N5651 2N3585 3-20 2N5344 2N6211 3-161 2N5655 2N5655 3-109 2N5345 2N6212 3-161 2N5656 2N5656 3-109 2N5346 2N5339 3-97 2N5657 2N5657 3-109 2N5347 2N5339 3-97 2N5660 2N3585 3-20 2N5348 2N5339 3-97 2N5661 2N3584 3-20 *Consult Motorola if a direct replacement is necessary. 1-4TABLE 1 METAL TO-204, TO-204AE (continued) Resistive Switching IcCont | VoEO(sus} . ts tf fr Pp (Case) Amps Volts Device Type hFE @l us as @lg | MHz Watts Max Min NPN PNP Min/Max Amp Max Max Amp Min @ 25C 50 200 BUS51 15 min 50 350 400 MJ10015044 10 min 40 2.5 1 20 250 500 BUT340e## 15 min 32 3 1.5 32 250 MJ100160## 10 min 40 25 1 20 250 56 400 BUT330## 20 min 36 3.3 1.6 36 250 60 60 MJ14000 MJ14001 15/100 50 300 30 MJ14002 MJ14003 15/100 50 300 200 MJ100200## 75 min 15 3.5 0.5 30 250 250 MJ100210## 75 min 15 3.5 0.5 30 250 70 125 BUS50e 15 min 50 350 @ Modified TO-3, 60 mii pins, # |hfg| @ 1 MHz, ## Darlington TABLE 2 METAL TO-205 (Formerly TO-39) STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR (Pin 3 connected to case) 241 CASE 79-04 (TO-205AD) Resistive Switching icCont | VcEO(sus) . ts tf fr Pp (Case) Amps Volts Device Type hE @l\c us ps @l | Mz Watts Max Min NPN PNP Min/Max Amp Max Max Amp Min @ 25C 0.5 300 MJ4646 20 min 0.5 0.72* 0.05 40 5 400 MJ4647 20 min 0.5 0.72* 0.05 30 5 3 40 2N3719 25/180 1 0.4* 1 60 6 2N3867 40/200 1.5 0.4* 1.5 60 6 60 2N3720 25/180 1 0.4* 1 60 6 2N3e68 30/150 1.5 0.4* 1.5 60 6 80 2N6303 30/150 1.6 0.4* 1.5 60 6 60 2N4877 20/100 4 15 0.5 4 4 10 80 2N5336 2N6190 30/120 2 2 0.2 2 30 6 2N5337 2N6191 60/240 2 2 0.2 2 30 6 100 2N5338 30/120 2 2 0.2 2 30 10 . 2N5339 2N6193 60/240 2 2 0.2 2 30 6 *toff [| JAN, JTX, JTXV Available 2-8MOTO TECHNICAL DATA = SEMICONDUCTOR es 2N5336 thru 2N5339 @ Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 Vde (Max) @ Ic = 5.0 Amp MEDIUM-POWER NPN SILICON TRANSISTORS . designed for switching and wide band amplifies applications. 5 AMPERE POWER TRANSISTORS NPN SILICON 80-100 VOLTS FIGURE 1 POWER-TEMPERATURE DERATING CURVE 40 Be So nx o Pp, POWER DISSIPATION (WATTS) oA 0 20 40 60 80 100 120 Tc, CASE TEMPERATURE (C) 140 160 180 200 Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. ro el a be CASE 79-04 TO-205AD (T0-39) @ DC Current Gain Specified to 5 Amperes 6 WATTS @ Excellent Safe Operating Area e@ Packaged in the Compact TO-205AD Case for Critical Space-Limited Applications @ Complement to 2N6190 thru 2N6193 a! ij MAXIMUM RATINGS Rating Symbol 2N5336 2N5338 Unit Collector-Emitter Voltage VcEO 80 100 Vde Collector-Base Voltage Vocp 80 100 Vde Emitter-Base Voltage VeEB 6.0 Vde Collector Current Continuous le 5.0 Adc Base Current Ig 1.0 Ade R 5 pt _ Totat Device Dissipation @ T = 25C Pp 6.0 Watts L ey 0, po Derate above 25C 34.3 mw/Sc | p _ SEATING Operating and Storage Junction Ty, Tstg ~65 to +200 C - PLANE Temperature Range E- THERMAL CHARACTERISTICS sti i STYLE 1 ___ hereon : Symbol wee Son PINT.EMITTER ells Og ermal Resistance, Junction to Case 0 . 2. BASE we 3. COLLECTOR 6036 (008 [tA OHO] 3-972N5336 thru 2N5339 ELECTRICAL CHARACTERISTICS (Tc = 25C, unless otherwise noted) Characteristic | Fig.No. | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* - VcEO(sus)* Vde (1g = 50 mAdc, tg = 0) 2N5336, 2N5337 80 - 2N5338, 2N5339 100 - Collector Cutoff Current = IcEO uAdc {(VcE = 75 Vdc, Ip = 0) 2N5336, 2N5337 -~ 100 (VceE = 90 Vde, Ig = 0) 2N5338, 2N5339 - 100 Collector Cutoff Current 12 IcEx Adc (VcE = 75 Vde, VEB(oft) = 1.5 Vde) 2N5336, 2NS337 - 10 (VcE = 90 Vdc, VeBiott} = 1.5 Vde) 2N5338, 2N5339 - 10 (VcE = 75 Vde, VEB off} = 1-5 Vde, 2N5336, 2N5337 Tc = 150C) ~ 1.0 mAdc (VE = 90 Vdc, VeB{off) = 1.5 Vde, 2N5338, 2N5339 To = 180C) = 1.0 Collector Cutoff Current - IcBo uAdc (Vcp = 80 Vdc, Ie = 0) 2N5336, 2NS337 = 10 . (Veg = 100 Vde, IE = 0) 2N5338, 2N5339 = 10 Emitter Cutoff Current = 'EBO uAdc (Vee = 6.0 Vdc, Io = 0) _ 130 ON CHARACTERISTICS DC Current Gain 8 hee _ (ic = 500 mAdc, VcE = 2.0 Vde} 2N5336, 2N5338 30 - 2N5337, 2N5339 60 = (Ig = 2.0 Adc, Voge = 2.0 Vde) 2N5336, 2N5338 30 420 2N5337, 2N5339 60 240 {Ig = 5.0 Adc, Vcg = 2.0 Vde) 2N5336, 2N5338 20 - 2N5337, 2N5339 40 - Collector-Emitter Saturation Voltage * 9,11, 13 VCE lsat) Vde (Ig = 2.0 Ade, tg = 0.2 Ade) _ 07 lic = 5.0 Adc, tp = 0.5 Adc) = 1.2 Base-Emitter Saturation Voltage 11,13 VBElsat) Vde (Io = 2.0 Ade, Ig = 0.2 Adc) - 1.2 (Ig = 5.0 Adc, Ip = 0.5 Adc) ~ 18 DYNAMIC CHARACTERISTICS Current-GainBandwidth Product _ tT MHz {Ico = 0.5 Adc, Vee = 10 Vdc, f = 10 MHz) 30 _ Output Capacitance 7 Cob pF (Vcog = 10 Vde, Ie = 0, f = 100 kHz) ~ 250 Input Capacitance 7 Cib pF (VBE = 2.0 Vdc, Io = 0, f = 100 kHz) - 1,000 SWITCHING CHARACTERISTICS Delay Time (Voc = 40 Vdc, VEB (off) = 3.0 Vdc, 2,3 tg - 100 ns Rise Time (Ic = 2.0 Adc, Igy = 0.2 Adc) t _ 100 ns Storage Time| (Vcc = 40 Vde, Ic = 2.0 Ade, 2,6 ts - 2.0 us Fall Time 'B1 = IB2 = 0.2 Adc) tt - 200 ns *Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. FIGURE 2 SWITCHING TIME TEST CIRCUIT FIGURE 3 TURN-ON TIME -11.6V Veo 0 +40 V 5.0 aVeee 80 V ip/tg = 10 2.0 TJ = 259C 62 20 td @ VEB(off} = 6.0 V 1.0 25uF 682 3 05 INPUT PULSE y tr @ Voge 20 = v tr, te < 10 ns 51 INS14 01 O.C. = 1.0% 0.05 td @ VEB(off) = 4.0 V = = 0.02 -3.3V 0.01 0.01 0.02 0.05 0.1 0.2 os 1.0 2.0 5.0 10 ic, COLLECTOR CURRENT (AMPS) 3-98c(t), NORMALIZED EFFECTIVE TRANSIENT 2N5336 thru 2N5339 FIGURE 4 THERMAL RESPONSE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 THERMAL RESISTANCE 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.07 0.1 02 0.3 a5 0.7 1.0 20 3 SINGLE PULSE 0 Nett) = c(t} Ac 84c = 29.20 CAV Max 0 CURVES Y FOR POWER PULSE TRAIN SHOWN READ TIME ATt Pipk) 4 ke Tytpk} ~ TC = Pipk) Guclt) 19 DUTY CYCLE, D=ti/t2 .0 7.0 10 20-30 50 70 100 200 300 500 700 1000 t, TIME OR PULSE WIDTH (ms) FIGURE 5 ACTIVE-REGION SAFE OPERATING AREA 10 _ 50 100 us g = 20 1.0 E Z 10 Ty = 200C 3 2 0.5 oo de S 02 t ' S Secondary Breakdown Limited 4 0.1 Bonding Wire Limited 8 Thermal Limitations Te = So 9.05 Pulse Duty Cycle = 10% - Applicable for Rated BV 0.02 3? 0.01 *2N5338, 1.0 20 3.0 5.0 7.0 10 20 (30 50 70 100 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 6 TURN-OFF TIME 1B1 = '82 Ic/lp = 10 Ty = 25C tf@Voc=80V t, TIME {us} tf@ Veco = 20V 0.02 005 (0.1 0.2 06 1.0 Ic, COLLECTOR CURRENT (AMPS) 2.0 5.0 3-99 CAPACITANCE (pF) There are two limitations on the power han- dling ability of a transistor: junction temperature and secondary breakdown. Safe operating area curves indicate |CVceE limits of the transistor that must be observed for reliable operation; ie, the transistor must not be subjected to greater dissipation than the curves indicate, The data of Figure 5 is based on TJ(pk) = 200C; Tc is variable depending on condclitions, Pulse curves are valid for duty cycles of 10% pro- vided T J(pk) S 200C. TJipk) May be calculated from the data in Figure 4, At high case tem- peratures, thermal limitations will reduce the power that can be handied to values less than the limitations imposed by secondary break- down, FIGURE 7 CAPACITANCE versus VOLTAGE 1000 700 500 Ty = 26C 300 200 100 70 50 20 3.0 5.0 7.0 10 200 3 50 70 Vp, REVERSE VOLTAGE (VOLTS) 100Ree, EXTERNAL BASE-EMITTER RESISTANCE (GHMS} hee. OC CURRENT GAIN (c, COLLECTOR CURRENT (AMPS} 2N5336 thru 2N5339 FIGURE 8 ~ DC CURRENT GAIN Vce=2.0V ee VE OV Ty= 17500 -559C 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 507.6 ic, COLLECTOR CURRENT (AMPS) 0.0070.01 FIGURE 10 EFFECTS OF BASE-EMITTER RESISTANCE 108 -- Vee = 30V 107 : "I = 10 X Ices 198 108 Ic=2X Ices 194 Ic = Ices (Typicat tees Values Obtained Fram Fig, 12} 103 102 0 20 40 60 80 100 120 140 160 180 = 200 TJ, JUNCTION TEMPERATURE (C) FIGURE 12 COLLECTOR CUT-OFF REGION Ss t rey 3S & Ty = 175C 10-5 10-6 10-7 10-8 REVERSE _ FORWARD 25C to-9 -0.4 0.2 0 0.2 04 0.6 08 1.0 VBE, BASE-EMITTER VOLTAGE (VOLTS) 3-100 VOLTAGE (VOLTS) Voce, COLLECTGR-EMITTER VOLTAGE {VOLTS} Oy, TEMPERATURE COEFFICIENTS (mV/C) FIGURE 9 COLLECTOR SATURATION REGION Ic = 100 mA Ty = 259C 05 1.0 100 = 200 300 S00 2.0 3.0 5.0 10 20 30 50 Ip, BASE CURRENT (mA) FIGURE 11 ON VOLTAGES 1.0 0.9 0.8 VBE(sat)@ Ic/Ip = 10 0.7 06 0.5 VBE @ VCE = 2.0V 04 Ty = 25C 0.3 0.2 0.1 VCE (sat) @ Ie/Ip = 10 0 0.07 0.02 0.05 60.1 0.2 0.5 1.0 203.0 50 10 Ic, COLLECTOR CURRENT (AMPS) FIGURE 13 TEMPERATURE COEFFICIENTS +5.0 +4.0 Ic/lg = 10 +3.0 Ty = -55C to +175C +2.0 vc for VCE (sat) +1.0 0 -1.0 ye for VBE (sat) -2.0 ~3.0 -4.0 -5.0 0,07 0,020.03 0.05 0.1 0.2.0.3 0.5 1.0 tc, COLLECTOR CURRENT (AMPS) 20 30 5.0 10