1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for radar transmitter applications and industrial
applications in the frequency range of 400 MHz to 900 MHz.
[1] Measured at = 10 %; tp = 1 ms.
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz
frequency range
BLU6H0410L-600P;
BLU6H0410LS-600P
Power LDMOS transistor
Rev. 2 — 12 July 2013 Product data sheet
Table 1. Application information
Typical RF performance at VDS = 50 V; in a common source 860 MHz narrowband test circuit;
unless otherwise specified.
Test signal f IDq PL(AV) PL(M) GpDIMD3
(MHz) (mA) (W) (W) (dB) (%) (dBc)
pulsed, class-AB [1] 860 1.3 - 600 20 58 -
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Product data sheet Rev. 2 — 12 July 2013 2 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLU6H0410L-600P (SOT539A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLU6H0410LS-600P (SOT539B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
35
1
2sym117
5
12
43
4
35
1
2sym117
Table 3. Ordering information
Type number Package
Name Description Version
BLU6H0410L-600P - flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads SOT539A
BLU6H0410LS-600P - earless flanged balanced LDMOST ceramic
package; 4 leads SOT539B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage 0.5 +11 V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
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Product data sheet Rev. 2 — 12 July 2013 3 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
5. Thermal characteristics
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tj=150C[1] 0.15 K/W
Zth(j-c) transient thermal impedance from
junction to case Tj=150C
tp = 100 s; = 10 % 0.020 K/W
tp = 200 s; = 10 % 0.023 K/W
tp = 300 s; = 10 % 0.025 K/W
tp = 500 s; = 10 % 0.028 K/W
tp = 100 s; = 20 % 0.035 K/W
Table 6. DC characteristics
Tj=25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 2.4 mA [1] 110 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 240 mA [1] 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; V
DS =50V --2.8A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -36- A
IGSS gate leakage current VGS =10V; V
DS = 0 V - - 280 nA
RDS(on) drain-source on-state resistance VGS =V
GS(th) +3.75 V;
ID=8.5A [1] -143- m
Ciss input capacitance VGS = 0 V ; VDS =50V;
f=1MHz [2] -220- pF
Coss output capacitance VGS = 0 V; VDS =50V;
f=1MHz -74- pF
Crss reverse transfer capacitance VGS = 0 V ; VDS =50V;
f=1MHz -1.2- pF
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Product data sheet Rev. 2 — 12 July 2013 4 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
[1] IDq for total device.
6.1 Ruggedness in class-AB operation
The BLU6H0410L-600P and BLU6H0410LS-600P are capable of withstanding a load
mismatch corr es po nd in g to VSWR 40 : 1 through all phases under the following
conditions: VDS = 50 V; f = 860 MHz at rated power.
Table 7. RF characteristics
Test signal: 2-Tone; Tcase =25
C unless otherwise specified; in a class-AB NXP production
narrowband test circuit.
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - 50 - V
IDq quiescent drain current [1] -1.3- A
PL(AV) average output power f1= 860 MHz;
f2=860.1MHz 250 - - W
Gppower gain f1= 860 MHz;
f2=860.1MHz 20 21 - dB
Ddrain efficiency f1= 860 MHz;
f2=860.1MHz 42 46 - %
IMD3 third-order intermodulation distortion f1= 860 MHz;
f2=860.1MHz -32 28 dBc
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitan c e as a fun ction of drain-source voltage; typical values per
section
001aam579
VDS (V)
0604020
200
100
300
400
Coss
(pF)
0
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Product data sheet Rev. 2 — 12 July 2013 5 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
7.2 Impedance information
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 2. 2-Tone power gain and d rain efficiency as
function of load power; typical values Fig 3. 2 -Tone power gain and third order
intermodulation distortion as function of
load power; typical values
PL(AV) (W)
0 500400200 300100
001aan761
16
20
24
Gp
(dB)
ηD
(%)
12
20
40
60
0
Gp
ηD
PL(AV) (W)
0 500400200 300100
001aan762
16
20
24
Gp
(dB)
IMD3
(dBc)
12
-40
-20
0
-60
Gp
IMD3
Fig 4. Definition of transistor imp e da nce
Table 8. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(M) = 600 W.
f ZiZL
MHz
300 0.617 j1.715 4.989 + j1.365
325 0.635 j1.355 4.867 + j1.424
350 0.655 j1.026 4.741 + j1.472
375 0.677 j0.721 4.614 + j1.511
001aan207
gate 1
gate 2
drain 2
drain 1
ZiZL
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Product data sheet Rev. 2 — 12 July 2013 6 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
400 0.702 j0.435 4.486 + j1.540
425 0.731 j0.164 4.357 + j1.559
450 0.762 + j0.096 4.228 + j1.570
475 0.798 + j0.347 4.100 + j1.573
500 0.839 + j0.592 4.974 + j1.567
525 0.884 + j0.833 3.850 + j1.554
550 0.936 + j1.072 3.728 + j1.534
575 0.995 + j1.310 3.608 + j1.508
600 1.063 + j1.549 3.492 + j1.475
625 1.141 + j1.791 3.378 + j1.437
650 1.230 + j2.037 3.268 + j1.394
675 1.334 + j2.289 3.161 + j1.347
700 1.456 + j2.548 3.057 + j1.295
725 1.599 + j2.814 2.957 + j1.239
750 1.768 + j3.090 2.860 + j1.180
775 1.971 + j3.376 2.676 + j1.118
800 2.214 + j3.671 2.677 + j1.053
825 2.510 + j3.975 2.591 + j0.985
850 2.873 + j4.282 2.508 + j0.915
875 3.320 + j4.584 2.428 + j0.843
900 3.875 + j4.865 2.351 + j0.770
925 4.562 + j5.095 2.277 + j0.695
950 5.409 + j5.223 2.206 + j0.618
975 6.426 + j5.166 2.138 + j0.540
1000 7.587 + j4.807 2.073 + j0.461
Table 8. Typical push-pull impedance …continued
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(M) = 600 W.
f ZiZL
MHz
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Product data sheet Rev. 2 — 12 July 2013 7 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
8. Test information
[1] American technical ceramics type 800R or capacitor of same quality.
[2] American technical ceramics type 800B or capacitor of same quality.
[3] American technical ceramics type 180R or capacitor of same quality.
[4] American technical ceramics type 100A or capacitor of same quality.
[5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
Table 9. List of componen ts
For test circuit, see Figure 5, Figure 6 and Figure 7.
Component Description Value Remarks
B1, B2 semi rigid coax 25 ; 49.5 mm UT-090C-25 (EZ 90-25)
C1 multilayer ceramic chip capacitor 12 pF [1]
C2, C3, C4, C5,
C6 multilayer ceramic chip capacitor 8.2 pF [1]
C7 multilayer ceramic chip capacitor 6.8 pF [2]
C8 multilayer ceramic chip capacitor 2.7 pF [2]
C9 multilayer ceramic chip capacitor 2.2 pF [2]
C10, C13, C14 multilayer ceramic chip capacitor 100 pF [3]
C11, C12 multilayer ceramic chip capacitor 10 pF [2]
C15, C16 multilayer ceramic chip capacitor 4.7 F; 50 V Kemet C1210X475K5RAC-TU or
capacitor of same quality.
C17, C18, C23,
C24 multilayer ceramic chip capacitor 100 pF [2]
C19, C20 multilayer ceramic chip capacitor 1 0 F; 50 V TDK C570X7R1H106KT000N or
capacitor of same quality.
C21, C22 electrolytic capacitor 470 F; 63 V
C30 multilayer ceramic chip capacitor 10 pF [4]
C31 multilayer ceramic chip capacitor 9.1 pF [4]
C32 multilayer ceramic chip capacitor 3.9 pF [4]
C33, C34, C35 multilayer ceramic chip capacitor 100 pF [4]
C36, C37 multilayer ceramic chip capacitor 4.7 F; 50 V TDK C4532X7R1E475MT020U or
capacitor of same quality.
L1 microstrip - [5] (W L) 15 mm 13 mm
L2 microstrip - [5] (W L) 5 mm 26 mm
L3, L32 microstrip - [5] (W L) 2 mm 49.5 mm
L4 microstrip - [5] (W L) 1. 7 mm 3.5 mm
L5 microstrip - [5] (W L) 2 mm 9.5 mm
L30 microstrip - [5] (W L) 5 mm 13 mm
L31 microstrip - [5] (W L) 2 mm 11 mm
L33 microstrip - [5] (W L) 2 mm 3mm
R1, R2 wire resistor 10
R3, R4 SMD resistor 5.6 0805
R5, R6 wire resistor 100
R7, R8 potentiometer 10 k
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BLU6H0410L-600P_6H0410LS-600P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reser ved.
Product data sheet Rev. 2 — 12 July 2013 8 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
See Table 9 for a list of components.
Fig 5. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and ga te test voltages
BLU6H0410L-600P_6H0410LS-600P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 12 July 2013 9 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
See Table 9 for a list of components.
Fig 6. Printe d-Circuit Board (PCB) for class-AB commo n source amplifier
50 mm
001aam588
105 mm
L33
L32
L32
L31
L30
L30
L1
L5
L5
L1
L2
L2
L3
L3
L4
L31
See Table 9 for a list of components.
Fig 7. Component layout for class-AB common source amplifier
-
+
-
+
6.3 mm
4 mm
+VG2(test) +VD2(test)
+VD1(test)
+VG1(test)
001aan764
R8
R7
R6
C37
C35
C34 C32 C30
C31
C36
C17
C19
C11
C12
C7 C9
C8
C1
C2
C3
C4
C5
C6
C21
C23
C24
C22
C20
C18
R2
C15
C13
C14
C16
R1
C33
50 Ω
C10
50 Ω
R4
R3
R5
49.6 mm
36.8 mm
26.3 mm
25.3 mm
44 mm
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Product data sheet Rev. 2 — 12 July 2013 10 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
9. Package outline
Fig 8. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 12-05-02
10-02-02
0 5 10 mm
scale
p
A
F
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56
0.18
0.10
31.55
30.94 13.72 9.53
9.27
17.12
16.10
10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455
0.007
0.004
1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365
0.674
0.634
0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059
1.625
1.615
1.005
0.995
0.130
0.120
0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
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Product data sheet Rev. 2 — 12 July 2013 11 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
Fig 9. Package outline SOT539B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
12-05-02
13-05-24
Unit(1)
mm
max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03
0.25
A
Dimensions
Earless flanged balanced ceramic package; 4 leads SOT539B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.39
32.13
U2w2
0.25
inches
max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395
0.01
0.007
0.004
0.54
1.005
0.995
0.089
0.079
1.275
1.265
0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
A
F
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
BLU6H0410L-600P_6H0410LS-600P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 12 July 2013 12 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
10. Handling information
11. Abbreviations
12. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release
date Data sheet
status Change
notice Supersedes
BLU6H0410L-600P_6H04 10LS-600P v.2 20130712 Product
data sheet - BLU6H0410L-600P_6H0410LS-600P v.1
Modifications: • The package outline Figure 9 is updated.
BLU6H0410L-600P_6H04 10LS-600P v.1 20120426 Product
data sheet --
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Product data sheet Rev. 2 — 12 July 2013 13 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond tho se described in the
Product data sheet.
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Applications — Applications that are described herein for any of these
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Customers are responsible for the design and ope ration of their applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification T his document contains data fro m the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BLU6H0410L-600P_6H0410LS-600P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 12 July 2013 14 of 15
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for aut omotive use. It i s neither qua lified nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product cl aims resulting f rom customer design an d
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specificat ions.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLU6H0410L(S)-600P
Power LDMOS transistor
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 July 2013
Document identifier: BLU6H0410L-600P_6H0410LS-600P
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 5
7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
7.1.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.2 Impedance information. . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Handling information. . . . . . . . . . . . . . . . . . . . 12
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14 Contact information. . . . . . . . . . . . . . . . . . . . . 14
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15