© 2012 IXYS All rights reserved 1 - 2
20120706a
CS 20-25 moT1
IXYS reserves the right to change limits, test conditions and dimensions.
VDRM = 2500 V
ITSM = 200 A
High Voltage
Phase Control Thyristor
Features
• high voltage thyristor
- for line frequency
- chip technology for long term stability
- planar glass passivated
• International standard package
JEDEC TO-268
• Epoxy meets UL 94V-0
Applications
• controlled rectifiers
- power supplies
- drives
• AC switches
• capacitor discharge control
- flash tubes
- X-ray and laser generators
Thyristor
Symbol Conditions Maximum Ratings
VDRM
VDSM
2500
2500
V
V
VRRM / RSM 1650 V
ITSM sine 180°; t = 10 ms; VR = 0 V; TVJ = 25°C 200 A
(di/dt)cr f = 50 Hz; tp = 200 µs; VD = 2000 V
diG /dt = 0.45 A/µs; IG = 0.45 A
non repetitive; IT = 45 A
150 A/µs
(dv/dt)cr VD = 2200 V
RGK = ∞; method 1 (linear voltage rise)
5000 V/µs
3
1
2/4
TO-268 AA (D3Pak)
Symbol Conditions Characteristic Values
min. max.
VTIT = 45 A TVJ = 25°C 3.0 V
VGT
IGT
VD = 6 V TVJ = 25°C 2.5
250
V
mA
VGD
IGD
VD = 2/3 VDRM TVJ = 25°C 0.2
5
V
mA
ILtp = 10 µs; VD = 6 V TVJ = 0°C
IG = 0.45 A; diG /dt = 0.45 A/µs
700 mA
IHVD = 6 V; RGK = ∞ TVJ = 0°C
TVJ = 70°C 55
300 mA
mA
tqIT = 20 A; tp = 300 µs; di/dt = -20 A/µs
VR = 10 V; dv/dt = 20 V/µs
VD = 800 V TVJ = 70°C
100 µs
IRRM / DRM VR = VRRM; VD = VDRM TVJ = 25°C
TVJ = 70°C
50
200
µA
µA
IDSM / RSM VR = VRSM; VD = VDSM TVJ = 70°C 2 mA
RthJC 0.80 K/W
2
4
4 = Backside = Anode