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tSENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 542, REV. -
HIGH VOLTAGE, HIGH DENSITY, LEADED
SILICON RECTIFIER ASSEMBLY
FEATURES:
• Low forward voltage drop • VR = 5000V – 25000V
• Low reverse leakage current • IF = 0.5A
• High thermal shock resistance • IR = 1.0µA
• Corona free construction • IFSM = 50A
• Low distributed capacitance
Absolute Maximum Ratings
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
(PIV)
MAX. AVG.
DC
OUTPUT
CURRENT
IF(AV)
Amps
FORCED
AIR @ 600
CFM, 55°C
IN STILL
OIL @
55°C
1 CYCLE
SURGE
CURRENT
IFSM
tp = 8.3ms
@ TJ MAX
I2t
tp = 8.3ms
@ TJ MAX
REPETITIVE
SURGE
CURRENT
IFRM @ 25°C
PACKAGE
LENGTH
Volts 55°C100°CAmps Amps Amps A2SAmps Inches
SCH5000
SCH7500
SCH10000
SCH12500
SCH15000
SCH20000
SCH25000
5000
7500
10000
12500
15000
20000
25000
0.5 0.33 1.0 1.0 50 12 10
1.145
1.645
2.020
2.395
2.770
3.520
4.270
Electrical Characteristics
TYPE
NUMBER
MAXIMUM
REVERSE
CURRENT
@ PIV
IR
µAmps
MAXIMUM
PEAK
FORWARD
VOLTAGE
VF @ IF
MAXIMUM
REVERSE
RECOVERY
TIME À
trr @ 25°C
25°C100°CV A µsec
SCH5000
SCH7500
SCH10000
SCH12500
SCH15000
SCH20000
SCH25000
1.0 20
5.0
8.0
10.0
13.0
15.0
20.0
25.0
1.0 5.0
Notes:
- Operating temperature range –55 to +150°C.
- Storage temperature range –55 to +150°C.
À Measured on discrete devices prior to assembly.
SCH10000 SCH12500
SCH15000 SCH20000
SCH25000