MJD3055T4G - ON Semiconductor

 Semiconductor Components Industries, LLC, 2012

February, 2012 − Rev. 12

1Publication Order Number:

MJD2955/D

MJD2955,

NJVMJD2955T4G(PNP)

MJD3055,

NJVMJD3055T4G(NPN)

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

Straight Lead Version in Plastic Sleeves (“−1” Suffix)

Electrically Similar to MJE2955 and MJE3055

DC Current Gain Specified to 10 Amperes

High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC

= 500 mAdc

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings:

Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

These are Pb−Free Packages*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SILICON

POWER TRANSISTORS

10 AMPERES

60 VOLTS, 20 WATTS

IPAK

CASE 369D

STYLE 1

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAMS

AYWW

J

xx55G

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

AYWW

J

xx55G

http://onsemi.com

A = Assembly Location

Y = Year

WW = Work Week

Jxx55 = Device Code

x = 29 or 30

G=Pb−Free Package

DPAK IPAK

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)

http://onsemi.com

2

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO 60 Vdc

Collector−Base Voltage VCB 70 Vdc

Emitter−Base Voltage VEB 5 Vdc

Collector Current IC10 Adc

Base Current IB6 Adc

Total Power Dissipation

@ TC = 25C

Derate above 25C

PD{

20

0.16

W

W/C

Total Power Dissipation (Note 1)

@ TA = 25C

Derate above 25C

PD1.75

0.014

W

W/C

Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 6.25 C/W

Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 71.4 C/W

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 30 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

60

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎÎ

50

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

ÎÎÎÎ

ICEX

ÎÎÎÎ

−

ÎÎÎÎ

0.02

2

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 70 Vdc, IE = 0)

(VCB = 70 Vdc, IE = 0, TC = 150_C)

ÎÎÎÎ

ICBO

ÎÎÎÎ

−

ÎÎÎÎ

0.02

2

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (Note 3)

(IC = 4 Adc, VCE = 4 Vdc)

(IC = 10 Adc, VCE = 4 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

20

5

ÎÎÎÎ

100

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage (Note 3)

(IC = 4 Adc, IB = 0.4 Adc)

(IC = 10 Adc, IB = 3.3 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

1.1

8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage (Note 3)

(IC = 4 Adc, VCE = 4 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)

ÎÎÎÎ

fT

ÎÎÎÎ

2

ÎÎÎÎ

−

ÎÎÎ

MHz

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)

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3

ORDERING INFORMATION

Device Package Type Package Shipping†

MJD2955G DPAK

(Pb−Free) 369C 75 Units / Rail

MJD2955−1G IPAK

(Pb−Free) 369D 75 Units / Rail

MJD2955T4G DPAK

(Pb−Free) 369C 2,500 Tape & Reel

NJVMJD2955T4G DPAK

(Pb−Free) 369C 2,500 Tape & Reel

MJD3055G DPAK

(Pb−Free) 369C 75 Units / Rail

MJD3055T4G DPAK

(Pb−Free) 369C 2,500 Tape & Reel

NJVMJD3055T4G DPAK

(Pb−Free) 369C 2,500 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)

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4

V, VOLTAGE (VOLTS)

t, TIME (s)

5

3

2

1

0.5

0.3

0.7

0.2

500

300

200

100

30

20

50

IC, COLLECTOR CURRENT (AMP)

2

0.5

0.3

IC, COLLECTOR CURRENT (AMP)

0.2

Figure 1. Power Derating

Figure 2. DC Current Gain

0.01 0.02 0.05 1 10250.1

Figure 3. Turn−On Time

Figure 4. “On” Voltages, MJD3055

TJ = 25C

tr

TJ = 150C

-55C

25C

1

0.7

0.2

IC, COLLECTOR CURRENT (AMP)

0.2 1 60.6 20.06 0.4 4

IC, COLLECTOR CURRENT (AMP)

0.1 0.2 0.3 1 10250.5 3

Figure 5. Turn−Off Time

hFE, DC CURRENT GAIN

VCE = 2 V

10

50.5

25

T, TEMPERATURE (C)

050 75 100 125 150

20

15

10

5

PD, POWER DISSIPATION (WATTS)

2.5

0

2

1.5

1

0.5

TATC

TC

TA

SURFACE

MOUNT

ts

1.4

0.8

0.6

0

1.2

1

0.4

0.2

TJ = 25C

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25C

VCC = 30 V

IC/IB = 10

0.05

0.03

0.02

0.1

0.07

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 2 V

0.1

0.05

0.07

0.1

td @ VBE(off)  5 V

0.2 1 60.6 20.06 0.4 40.1

t, TIME (s)

tf

TYPICAL CHARACTERISTICS

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)

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5

Figure 6. “On” Voltages, MJD2955

2

0.1

0

0.2 0.3 0.5 1 3 10

0.8

1.6

1.2

V, VOLTAGE (VOLTS)

0.4

5

TJ = 25C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 3 V

Figure 7. Switching Time Test Circuit

Figure 8. Thermal Response

t, TIME (ms)

1

0.01

0.02

0.7

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 500

RqJC(t) = r(t) RqJC

RqJC = 6.25C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.1 0.50.2

RESISTANCE (NORMALIZED)

1 k

0.5

0.3

0.07

0.03

0.03 0.3 3 30 300

IC, COLLECTOR CURRENT (AMP)

2

+11 V

25 ms

0

-9 V

RB

-4 V

D1

SCOPE

VCC

+30 V

RC

tr, tf  10 ns

DUTY CYCLE = 1%

51

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB  100 mA

MSD6100 USED BELOW IB  100 mA

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.01

Figure 9. Maximum Forward Bias

Safe Operating Area

0.01

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.02

5

2

1

10

0.5

0.1

TJ = 150C

1ms

dc

3

0.3

0.6 1 2 6020 40

IC, COLLECTOR CURRENT (AMP)

WIRE BOND LIMIT

THERMAL LIMIT TC = 25C (D = 0.1)

SECOND BREAKDOWN LIMIT

1064

500ms

0.03

0.05

100ms

5ms

FORWARD BIAS SAFE OPERATING AREA

INFORMATION

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 9 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided

TJ(pk) v 150_C. TJ(pk) may be calculated from the data in

Figure 8. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)

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6

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE D

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

5.80

0.228

2.58

0.101

1.6

0.063

6.20

0.244

3.0

0.118

6.172

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

b

D

E

b3

L3

L4

b2

eM

0.005 (0.13) C

c2

A

c

C

Z

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

4

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

A1

H

DETAIL A

SEATING

PLANE

A

B

C

L1

L

H

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)

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7

PACKAGE DIMENSIONS

123

4

V

SA

K

−T−

SEATING

PLANE

R

B

F

G

D3 PL

M

0.13 (0.005) T

C

E

J

H

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z

Z0.155 −−− 3.93 −−−

IPAK

CASE 369D−01

ISSUE C

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

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PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MJD2955/D

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