© Semiconductor Components Industries, LLC, 2014
March, 2014− Rev. 11 1Publication Order Number:
BAS16WT1/D
BAS16WT1G
Silicon Switching Diode
Features
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Continuous Reverse Voltage VR100 V
Recurrent Peak Forward Current IR200 mA
Peak Forward Surge Current
Pulse Width = 10 msIFM(surge) 500 mA
Total Power Dissipation,
One Diode Loaded TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD200
1.6
mW
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to
+150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
RqJA 625 °C/W
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Device Package Shipping†
ORDERING INFORMATION
SC−70
CASE 419
STYLE 2
MARKING
DIAGRAM
BAS16WT1G SC−70
(Pb−Free) 3000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
A6 MG
G
1
A6 = Specific Device Code
M = Date Code
G= Pb−Free Package
(*Note: Microdot may be in either location)
SBAS16WT1G SC−70
(Pb−Free) 3000 / Tape & Ree
l
NSVBAS16WT3G SC−70
(Pb−Free) 10000 / Tape &
Reel
BAS16WT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF−
−
−
−
715
866
1000
1250
mV
Reverse Current
(VR = 100 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR−
−
−
1.0
50
30
mA
Capacitance
(VR = 0, f = 1.0 MHz) CD− 2.0 pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 W) (Figure 1) trr − 6.0 ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2) QS − 45 PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3) VFR − 1.75 V
BAS16WT1G
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3
Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Stored Charge Equivalent Test Circuit
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
VF
1 ns MAX
90%
10%
t
100 ns
tif
trr
Irr
500 WDUT
50 W
DUTY CYCLE = 2%
Vf
90%
10%
20 ns MAX
t
400 ns
VC
VCM
t
VCM +Qa
C
500 WDUT BAW62
D1 243 pF 100 KW
DUTY CYCLE = 2%
V
120 ns
t
2 ns MAX
10%
90%
V
Vfr
1 KW450 W
50 W
DUT
DUTY CYCLE = 2%
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
BAS16WT1G
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4
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 4. Forward Voltage Figure 5. Leakage Current
Figure 6. Capacitance
TA = -40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
BAS16WT1G
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5
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
BAS16WT1/D
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