THYRISTOR MODULE
Maximum Ratings Approx Net Weight:155g
Grade
Parameter
ParameterParameter
Parameter
Symbol PAT/PAH1008 Unit
Repetitive Peak Off-State Voltage VDRM 800
Non Repetitive Peak Off-State Voltage VDSM 960 V
Parameter
Parameter Parameter
Parameter
Conditions
ConditionsConditions
Conditions
Max Rated
Max RatedMax Rated
Max Rated
Value
Value Value
Value
Unit
RMS On-State Current IT(RMS) 50Hz Half Sine Wave condition
Tc=82°C 222 A
Surge On-State Current IFSM 50 Hz Half Sine Wave,1Pulse
Non-Repetitive 2000 A
I Squared t I2t 2msec to 10msec 20000 A2s
Critical Rate of Turned-On Current di/dt VD=2/3VDRM, ITM=2•IO, Tj=125°C
IG=200mA, diG/dt=0.2A/µs 100 A/µs
Peak Gate Power PGM 5 W
Average Gate Power PG(AV) 1 W
Peak Gate Current IGM 2 A
Peak Gate Voltage VGM 10 V
Peak Gate Reverse Voltage VRGM 5 V
Operating JunctionTemperature Range Tjw -40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
Isoration Voltage Viso Base Plate to Terminals, AC1min 2000 V
Case mounting M5 Screw 2.4 to 2.8
Mounting torque Terminals Ftor M5 Screw 2.4 to 2.8 N•m
Value per 1 Arm
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and
Diode Anti-Parallel Circuit
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* AC phase control
* AC switch
PAT100
8
PAT100
8
PAT100
8
PAT100
8
PAH100
8
PAH100
8
PAH100
8
PAH100
8
OUTLIN E DRAWING
222A / 800V
PA
T
PAH
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Electrical • Thermal Characteristics
Maximum Value.
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Peak Off-State Current IDM VDM= VDRM, Tj=125°C 40 mA
Peak On-State Voltage VTM ITM= 300A, Tj=25°C 1.38 V
Tj=-40°C 200
Tj=25°C 100
Gate Current to Trigger I GT V
D=6V,IT=1A Tj=125°C 50
mA
Tj=-40°C 4
Tj=25°C 2.5
Gate Voltage to Trigger V GT V
D=6V,IT=1A Tj=125°C 2
V
Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125°C 0.25 V
Critical Rate of Rise of Off-State
Voltage dv/dt VD=2/3VDRM Tj=125°C 500 V/µs
Turn-Off Time t q ITM=IO,VD=2/3VDRM
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj =1 25 °C 100 µs
Turn-On Time tgt 6 µs
Delay Time t d 2 µs
Rise Time t r
Tj=25°C, ITM=IT(RMS)
VD=100V, IG=200mA
diG/dt=0.2A/µs 4 µs
Latching Current I L Tj=25°C 100 mA
Holding Current I H Tj=25°C 50
Rth(j-c) Junction to Case 0.15
Thermal Resistance *1 Rth(c-f) Base Plate to Heat Sink
with Thermal Compound 0.1
°C/W
Value Per 1Arm
*1: Value Per Module
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PAT/PAH1008 OUTLINE DRAWING (Dimensions in mm)
PAT
PAH
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