General Purpose Transistor MMBT5401-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Diagram: 1 2 0.006(0.15) 0.079(2.00) Collector 3 0.002(0.05) 0.071(1.80) 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) 1 Base 0.004(0.10) max 0.020(0.50) 0.008(0.20) min 0.012(0.30) 2 Emitter Marking: 2L Dimensions in inches and (millimeter) Maximum Ratings (at T =25C unless otherwise noted) A Symbol Value Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current - continuous IC -0.6 A Collector dissipation PC 0.3 W TJ, TSTG -55 ~ +150 Parameter Junction and storage temperature O C Electrical Characteristics (at T =25C unless otherwise noted) A Parameter Conditions Symbol Min Max Unit V V Collector-base breakdown voltage IC=-100A, IE=0 V(BR)CBO -160 Collector-emitter breakdown voltage IC=-1mA, IB=0 V(BR)CEO -150 V Emitter-base breakdown voltage IE=-10A, IC=0 V(BR)EBO -5 V Collector cut-off current VCB=-120V, IE=0 ICBO -0.1 A Emitter cut-off current VEB=-4V, IC=0 IEBO -0.1 A VCE=-5V, IC=-1mA hFE(1) 80 VCE=-5V, IC=-10mA hFE(2) 100 VCE=-5V, IC=-50mA hFE(3) 50 Collector-emitter saturation voltage IC=-50mA, IB=-5mA VCE(sat) -0.5 V Base-emitter saturation voltage IC=-50mA, IB=-5mA VBE(sat) -1 V Transition frequency VCE=-5V, IC=-10mA, f=30MHz DC current gain fT 100 200 Mhz REV:B Page 1 QW-BTR18 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT5401-G) Fig.2 Collector Emitter Saturation Voltage vs. Collector Current Fig.1 Max Power Dissipation vs. Ambient Temperature 400 10 VCE(sat), Collector to Emitter Saturation Voltage (V) PD, Power Dissipation (mW) 350 300 250 200 150 100 1.0 O Ta=150 C 0.1 O Ta=-50 C O Ta=25 C 50 0 0.01 0 25 50 75 100 125 150 175 1 100 1000 IC, Collector Current (mA) Fig.3 DC Current Gain vs. Collector Current Fig.4 Base Emitter Voltage vs. Collector Current 10000 1.0 VCE=5V VBE(ON), Base Emitter Voltage (V) VCE=5V hFE, DC Current Gain (Normalized) 10 Ta, Ambient Temperature (C) 1000 O Ta=150 C 100 O Ta=25 C O Ta=-50 C 10 1 1 10 100 1000 Ta=-50 OC O Ta=25 C 0.5 O Ta=150 C 0.1 0.1 IC, Collector Current (mA) 1.0 10 100 IC, Collector Current (mA) Fig.5 Gain Bandwidth Product vs. Collector Current 1000 fT, Gain Bandwidth Product (Mhz) VCE=10V 100 10 1 1 10 100 IC, Collector Current (mA) REV:B Page 2 QW-BTR18 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.10 0.10 2.85 0.10 1.40 0.10 1.55 0.10 178 1 50.0 MIN. 13.0 0.20 (inch) 0.122 0.004 0.112 0.004 0.055 0.004 0.061 0.004 7.008 0.04 1.969 MIN. 0.512 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 0.10 3.50 0.05 4.00 0.10 4.00 0.10 2.00 0.05 8.00 0.30 14.4 MAX. (inch) 0.069 0.004 0.138 0.002 0.157 0.004 0.157 0.004 0.079 0.002 0.315 0.012 0.567 MAX. REV:B Page 3 QW-BTR18 Comchip Technology CO., LTD. General Purpose Transistor Marking Code 3 Part Number Marking Code MMBT5401-G 2L 2L 1 2 Suggested PAD Layout SOT-23 A SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 C D B Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 REV:B Page 4 QW-BTR18 Comchip Technology CO., LTD. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Comchip Technology: MMBT5401-G