Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage VRRM 1600 V Durchlastrom Grenzeffektivwert RMS forward current per chip IFRMSM 40 A Id 15 A Dauergleichstrom DC forward current TC = 80C Stostrom Grenzwert tP = 10 ms, T vj = surge forward current tP = 10 ms, T vj = 150C Grenzlastintegral tP = 10 ms, T vj = 2 I t - value 25C IFSM 300 A 230 A 450 A2s 260 As VCES 1200 V IC,nom. 15 A IC 35 A ICRM 30 A Ptot 180 W VGES +/- 20V V IF 15 A IFRM 30 A 2 It 125 A2s VCES 1200 V TC = 80 C IC,nom. 10 A TC = 25 C IC 20 A 2 It 25C tP = 10 ms, T vj = 150C 2 Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tc = 80 C TC = 25 C Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25C T C = 80 C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Tc = 80 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral 2 I t - value VR = 0V, tp = 10ms, Tvj = 125C Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 20 A Gesamt-Verlustleistung total power dissipation TC = 25C Ptot 100 W VGES +/- 20V V IF 10 A IFRM 20 A Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Tc = 80 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms prepared by: Andreas Schulz date of publication:17.09.1999 approved by: M.Hierholzer revision: 5 1(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. VF - 0,95 1 V Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Tvj = 150C, Schleusenspannung threshold voltage Tvj = 150C V(TO) - - 0,8 V Ersatzwiderstand slope resistance Tvj = 150C rT - - 10,5 m Sperrstrom reverse current Tvj = 150C, IR - 2 - mA RAA'+CC' - 8 - m min. typ. max. - 2,2 2,55 V - 2,5 - V VGE(TO) 4,5 5,5 6,5 V Cies - 1,0 - nF ICES - 1,0 500 A - 1,2 - mA IGES - - 300 nA td,on - 65 - ns - 66 - ns - 65 - ns - 55 - ns - 370 - ns - 410 - ns - 50 - ns - 55 - ns Eon - 2 - mWs Eoff - 1,7 - mWs ISC - 90 - A I F = 15 A V R = 1600 V Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 15 A IC = 15 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 0,6 mA Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, V CE = 1200 V VGE = 0V, Tvj =125C, V CE = 1200 V Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Tvj = 25C, VCE = 0V, VGE =20V, Tvj =25C IC = INenn, V CC = 47 Ohm VGE = 15V, Tvj = 125C, R G = 47 Ohm IC = INenn, 600 V VGE = 15V, Tvj = 25C, R G = 47 Ohm VGE = 15V, Tvj = 125C, R G = 47 Ohm IC = INenn, 600 V V CC = VGE = 15V, Tvj = 25C, R G = 47 Ohm VGE = 15V, Tvj = 125C, R G = 47 Ohm IC = INenn, 600 V V CC = VGE = 15V, Tvj = 25C, R G = 47 Ohm VGE = 15V, Tvj = 125C, R G = 47 Ohm IC = INenn, 600 V V CC = VGE = 15V, Tvj = 125C, R G = LS = Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = INenn, V CC = VGE = 15V, Tvj = 125C, R G = LS = Kurzschluverhalten SC Data 600 V VGE = 15V, Tvj = 25C, R G = V CC = 47 Ohm tr td,off tf 75 nH 600 V 47 Ohm 75 nH tP 10s, VGE 15V, RG = 47 Ohm Tvj125C, VCC = 720 V dI/dt = VCE sat 1200 A/s 2(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy VGE = 0V, Tvj = 25C, IF = 15 A VGE = 0V, Tvj = 125C, IF = 15 A IF=INenn, - diF/dt = 600 V VGE = -10V, Tvj = 125C, V R = 600 V IF=INenn, 1000A/s VGE = -10V, Tvj = 25C, V R = 600 V VGE = -10V, Tvj = 125C, V R = 600 V IF=INenn, 1000A/s - diF/dt = VGE = -10V, Tvj = 25C, V R = 600 V VGE = -10V, Tvj = 125C, V R = 600 V Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 10,0 A IC = 10,0 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 0,35mA Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, V CE = 1200 V VGE = 0V, Tvj = 125C, V CE = 1200 V Gate-Emitter Reststrom gate-emitter leakage current Tvj = 25C, VCE = 0V, VGE = 20V, Tvj = 25C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, 10,0 A IF = 10,0 A TC = 25C Abweichung von R100 deviation of R100 TC = 100C, R 100 = 493 Verlustleistung power dissipation TC = 25C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] max. LCE - - 100 nH RCC'+EE' - 11 - m min. typ. max. - 1,75 2,1 V - 1,6 - V - 22 - A - 25 - A - 1,6 - As - 3,2 - As - 0,5 - mWs - 1,2 - mWs min. typ. max. - 2,4 2,85 V - 2,75 - V VGE(TO) 4,5 5,5 6,5 V Cies - 0,6 - nF ICES - 0,5 500 A - 0,8 - mA - - 300 nA min. typ. max. - 2,2 2,55 V - 2,1 - V min. typ. max. R25 - 5 - k R/R -5 5 % 20 mW VF IRM Qr ERQ VCE sat IGES IF = NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance typ. 1000A/s VGE = -10V, Tvj = 25C, V R = - diF/dt = min. VF P25 B25/50 3375 K 3(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case RthJC Gleichr. Diode/ Rectif. Diode min. typ. max. - - 1 K/W Trans. Wechsr./ Trans. Inverter - - 0,7 K/W Diode Wechsr./ Diode Inverter - - 1,2 K/W Trans. Bremse/ Trans. Brake - - 1,2 K/W Diode Bremse/ Diode Brake - - 2,3 K/W - 0,08 - K/W - 0,04 - K/W - 0,08 - K/W Ubergangs-Warmewiderstand Gleichr. Diode/ Rectif. Diode Paste=1W/m*K thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter grease=1W/m*K RthCK Diode Wechsr./ Diode Inverter Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 M Anzugsdrehmoment f. mech. Befestigung mounting torque 3 Nm 10% Gewicht weight G 180 g 4(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Ausgangskennlinienfeld Wechselr. (typisch) CI = f (VCE) Output characteristic Inverter (typical) VGE = 15 V 30 25 Tj = 25C Tj = 125C IC [A] 20 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) CI = f (VCE) Output characteristic Inverter (typical) Tvj = 125C 30 VGE = 17V 25 VGE = 15V VGE = 13V VGE = 11V IC [A] 20 VGE = 9V 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 VCE [V] 5(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Ubertragungscharakteristik Wechselr. (typisch) I C Transfer characteristic Inverter (typical) = f (VGE) VCE = 20 V 30 25 Tj = 25C 20 IC [A] Tj = 125C 15 10 5 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) FI = f (VF) 30 25 Tj = 25C 20 IF [A] Tj = 125C 15 10 5 0 0 0,5 1 1,5 2 2,5 VF [V] 6(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) Switching losses Inverter (typical) Tj = 125C, V GE = 15 V, VCC = RGon = RGoff = 600 V 47 Ohm 6 Eon 5 Eoff Erec E [mWs] 4 3 2 1 0 0 5 10 15 20 25 30 35 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125C, V GE = +-15 V , I c = Inenn , VCC = 600 V 3 Eon Eoff 2,5 Erec E [mWs] 2 1,5 1 0,5 0 0 10 20 30 40 50 60 70 80 90 RG [] 7(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter ZthJC = f (t) 10 Zth-IGBT ZthJC [K/W] Zth-FWD 1 0,1 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) I C = f (VCE) Reverse bias save operating area Inverter (RBSOA)Tvj = 125C, VGE = 15V, RG = 47 Ohm 35 30 25 IC,Modul IC,Chip IC [A] 20 15 10 5 0 0 200 400 600 800 1000 1200 1400 VCE [V] 8(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) CI = Output characteristic brake-chopper-IGBT (typical) f (VCE) VGE = 15 V 20 18 16 Tj = 25C Tj = 125C 14 IC [A] 12 10 8 6 4 2 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) Forward characteristic of brake-chopper-FWD (typical) FI = f (VF) 20 18 16 14 Tj = 25C Tj = 125C IF [A] 12 10 8 6 4 2 0 0 0,5 1 1,5 2 2,5 3 VF [V] 9(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) FI = f (VF) 30 25 20 Tj = 25C IF [A] Tj = 150C 15 10 5 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 120 140 160 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[] 10000 1000 100 0 20 40 60 80 100 TC [C] 10(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Schaltplan/ Circuit diagram 21 8 22 20 1 2 3 23 19 7 14 18 13 24 4 12 9 16 17 5 15 6 NTC 11 10 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11(11) DB-PIM-9.xls