
THYRISTOR MODULE
Maximum Ratings Approx Net Weight:155g
Grade
Parameter
ParameterParameter
Parameter
Symbol PCH10012 PCH10016
Unit
Repetitive Peak Off-State Voltage VDRM 1200 1600
Non Repetitive Peak Off-State Voltage VDSM 1300 1700 V
Repetitive Peak Reverse Voltage VRRM 1200 1600
Non Repetitive Peak Reverse Voltage VRSM 1300 1700 V
Parameter
Parameter Parameter
Parameter
Conditions
ConditionsConditions
Conditions
Max Rated
Max RatedMax Rated
Max Rated
Value
Value Value
Value
Unit
Average Rectified Output Current IO(AV) 50Hz Half Sine Wave condition
Tc=77°C 100 A
RMS On-State Current IT(RMS) 156 A
Surge On-State Current ITSM 50 Hz Half Sine Wave,1Pulse
Non-Repetitive 2000 A
I Squared t I2t 2msec to 10msec 20000 A2s
Critical Rate of Turned-On Current di/dt VD=2/3VDRM, ITM=2•IO, Tj=125°C
I
G=200mA, diG/dt=0.2A/µs 100 A/µs
Peak Gate Power PGM 5 W
Average Gate Power PG(AV) 1 W
Peak Gate Current IGM 2 A
Peak Gate Voltage VGM 10 V
Peak Gate Reverse Voltage VRGM 5 V
Operating JunctionTemperature Range Tjw -40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
Isoration Voltage Viso Base Plate to Terminals, AC1min 2500 V
Case mounting M6 Screw 2.4 to 3.5
Mounting torque Terminals Ftor M5 Screw 2.4 to 2.8 N•m
Value per 1 Arm
FEATURES
* Isolated Base
* Thyristor and Diode Cathode Common
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PCH10012 PCH1001
PCH10012 PCH1001
PCH10012 PCH1001
PCH10012 PCH1001
OUTLINE DRAWING
φ
100A / 1200 to 1600V
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